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FBGA-78
(insgesamt 99 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| MT40A512M8SA-062E AAT:F TR | Enhanced memory technology for improved computing efficiency and speed | Micron Technology | 6.334 | BOM |
| MT40A2G4SA-075:E TR | High-capacity memory module for data-intensive application | Micron Technology | 4.711 | BOM |
| MT40A1G8SA-062E:E TR | Advanced BxFBGA package for reduced board footprint and ease of us | Micron Technology | 6.460 | BOM |
| MT40A1G8SA-062E AUT:E TR | Low-Power Consumption DDR4 RAM Solution: MT40A1G8SA-062E AUT:E TR,'DDR4 8G 1GX8 FBGA' | Micron Technology | 7.314 | BOM |
| MT41K256M8DA-125 AUT:K TR | Ultra-reliable memory component for enterprise and industrial systems integration | Micron Technology | 5.159 | BOM |
| MT41K256M8DA-107 AAT:K TR | Low voltage, high-capacity memory module with excellent thermal stabilit | Micron Technology | 5.211 | BOM |
| AS4C128M8D3LB-12BCNTR | Reliable and efficient DRAM solution for servers, workstations, or gaming PCs, supporting up to 1.35V voltage | Alliance Memory | 3.326 | BOM |
| AS4C128M8D3LB-12BANTR | Upgrade your system's memory capacity with 1GB of DDR3 RAM | Alliance Memory | 3.830 | BOM |
| AS4C128M8D3B-12BANTR | Fast, Reliable, and Low-Voltage DDR3 Module | Alliance Memory | 4.080 | BOM |
| MT40A512M8SA-062E IT:F TR | High-capacity DRAM solution for demanding applications | Micron Technology | 5.154 | BOM |
| AS4C512M8D3A-12BAN | Upgrade your PC's performance with this 8-layered | Alliance Memory | 6.859 | BOM |
| AS4C128M8D3LA-12BCN | Streamline data transfer with low-latency DDRtechnolog | Alliance Memory | 2.571 | BOM |
| AS4C128M8D3A-12BIN | Unleash your computer's full potential with this fast DDR3 RAM | Alliance Memory | 2.767 | BOM |
| AS4C128M8D3LB-12BAN | High-performance DDRSDRAM memory module for reliable data transfer and storage | Alliance Memory | 4.290 | BOM |
| MT41K512M8DA-107 AAT:P TR | Reliable and robust memory module for mission-critical systems | Micron Technology | 6.858 | BOM |
| MT41K512M4DA-125:K TR | Fast, high-performance DRAM module for improved system performanc | Micron Technology | 7.076 | BOM |
| MT41K256M8DA-125 IT:K TR | Power-efficient solution for demanding system requirements and applications | Micron Technology | 9.458 | BOM |
| MT41K256M8DA-107:K TR | Next-generation DDR SDRAM for cloud computing and big dat | Micron Technology | 5.856 | BOM |
| MT41K128M8DA-107:J TR | Reliable and power-efficient memory module for data-intensive application | Micron Technology | 7.762 | BOM |
| AS4C1G8D4-75BCN | Upgrade your system's memory capacity with ease | Alliance Memory | 2.868 | BOM |
| AS4C512M8D3LC-12BINTR | SDRAM ROHS FBGA-78(7.5x10.6) AS4C512M8D3LC-12BINTR | Alliance Memory | 2.078 | BOM |
| AS4C128M8D3LB-12BIN | DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp | Alliance Memory | 7.237 | BOM |
| AS4C1G8D3LA-10BCN | Enhanced data transfer speed and capacit | Alliance Memory | 5.889 | BOM |
| AS4C512M8D3LC-12BIN | High-performance memory solution for industrial applications | Alliance Memory | 6.751 | BOM |
| AS4C128M8D3B-12BIN | Compliant with RoHS directives, this SDRAM offers reliable high-performance storage | Alliance Memory | 3.652 | BOM |
| AS4C512M8D4-83BCN | This chip has a 512Mx8 configuration and operates at a voltage of 1.2V | Alliance Memory | 2.272 | BOM |
| AS4C512M8D4-83BIN | AS4C512M8D4-83BIN is a DDR4 DRAM module boasting a capacity of 4G, with a configuration of 512M x 8 | Alliance Memory | 7.728 | BOM |
| AS4C512M8D4-75BCN | Compact and power-efficient FBGA package for reduced footprint | Alliance Memory | 3.466 | BOM |
| AS4C1G8D3LA-10BIN | High-capacity, low-voltage memory ideal for laptops and desktops alike | Alliance Memory | 3.232 | BOM |
| AS4C512M8D3LC-12BCN | Next-generation DRAM solution for commercial system | Alliance Memory | 7.295 | BOM |
| IM4G08D3FDBG-107 | Low-voltage DDRRAM for power-conscious system | Intelligent Memory | 6.135 | BOM |
| H5AN8G8NCJR-VKC | Ideal for gaming and multimedia applications where fast data transfer rates are critica | Sk Hynix | 2.018 | BOM |
| MT40A512M8SA-062E AAT:F | DRAM DDR4 4G 512MX8 FBGA | Micron Technology | 5.712 | BOM |
| MT40A2G4SA-062E:R | DRAM Chip DDR4 SDRAM 8Gbit 2Gx4 1.2V 78-Pin FBGA | Micron Technology | 2.330 | BOM |
| MT40A512M8SA-062E AIT:F | DRAM DDR4 memory module | Micron Technology | 4.501 | BOM |
| MT41K256M8DA-125 AIT:K | PBGA78-packaged DDR3L DRAM with 256MX8 layout | Micron Technology | 2.303 | BOM |
| MT41K256M8DA-107 AAT:K | DRAM Chip DDR3 SDRAM 2Gb Automotive AEC-Q100 | Microchip | 2.621 | BOM |
| MT40A1G8SA-062E AUT:E | 8GB DDR4 SDRAM Stick with 1Gx8 Configuration | Micron Technology | 4.705 | BOM |
| MT40A1G8SA-062E AIT:E TR | FBGA DDR4 8GB 1GX8 Memory | Micron Technology | 6.949 | BOM |
| MT40A1G8SA-062E AAT:E TR | DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V Automotive AEC-Q100 78-Pin FBGA Tray | Micron Technology | 3.698 | BOM |
| MT41K256M8DA-125 AAT:K TR | DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V Automotive AEC-Q100 78-Pin FBGA T/R | Micron Technology | 2.124 | BOM |
| AS4C128M8D3LB-12BINTR | 1G DDR3 DRAM module operating at 800MHz with low voltage requirement of 1.35V, suitable for industrial temperature conditions | Alliance Memory | 3.875 | BOM |
| MT41K512M8DA-093:P TR | DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin FBGA T/R | Micron Technology | 6.711 | BOM |
| MT41K256M8DA-125 AIT:K TR | FBGA-78(8x10.5) DDR SDRAM ROHS | Micron Technology | 6.867 | BOM |
| MT41K128M8DA-107 IT:J TR | 1.35V Voltage Requirement | Micron Technology | 2.351 | BOM |
| MT40A512M8SA-062E IT:F | Computer RAM Chip 4Gb 512Mx8 1.2V 78-Pin FBGA Tray | Micron Technology | 2.710 | BOM |
| AS4C128M8D3B-12BCN | AS4C128M8D3B-12BCN DDR SDRAM ROHS FBGA-78(8x10.5) | Alliance Memory | 3.468 | BOM |
| IS46TR81024BL-107MBLA1 | SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-TWBGA (10x14) | ISSI | 9.458 | BOM |
| IS46TR81024B-107MBLA1-TR | SDRAM - DDR3 Memory IC 8Gbit Parallel 933 MHz 20 ns 78-TWBGA (10x14) | ISSI | 9.458 | BOM |
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