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FDIP-32W
(insgesamt 14 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
M27C2001-12F6 | The MC-Fis an Industrial-Grade EPROM with High Capacity and Flexibili | Stmicroelectronics | 9.458 | BOM |
M27C801-100F1 | High-density, high-performance EPROM for fast data storage and retrieval | Stmicroelectronics | 3.574 | BOM |
M27C4001-12F1 | This UVPROM features a windowed design for ultraviolet erasure and is sealed with frit for added durability. It is compatible with a DIP-32 socket | Stmicroelectronics | 3.693 | BOM |
M27C4001-10F1 | Parallel 100ns DIP-32 UV IC EPROM Memory 4Mb (512K x 8) | Stmicroelectronics | 3.103 | BOM |
M27C2001-12F1 | EPROM memory chip | Stmicroelectronics | 3.790 | BOM |
M27C1001-15F1 | The operating temperature range for this EPROM is 0 to +70 degrees Celsius | Stmicroelectronics | 2.947 | BOM |
M27C1001-12F1 | Memory chip M27C1001-12F1 with 1M storage capacity and 120ns speed | Stmicroelectronics | 3.783 | BOM |
M27C801-100F6 | M27C801-100F6 EPROM: 8M memory in a compact package | STMicroelectronics, Inc | 3.251 | BOM |
M27C2001-10F6 | Get your hands on the M27C2001-10F6, a high-speed EPROM chip offering storage capacity of 2M with fast access time of 100ns." | STMicroelectronics, Inc | 3.317 | BOM |
M27C4001-80XF1 | EPROM; 512 KB X 8; 5V; 80; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 11.5 V (MIN.); 0 | STMicroelectronics, Inc | 2.359 | BOM |
M27C801-120F1 | 100 nanosecond access time | Stmicroelectronics | 9.195 | BOM |
M27C4001-45XF1 | ROHS Non-Volatile Memory M27C4001-45XF1 ROM CDIP-32 | ST | 7.055 | BOM |
M27C1001-10F1 | High-density EPROM for storing large amounts of data (54) | Stmicroelectronics | 2.333 | BOM |
M27C801-80F1 | EPROM chip with 8 million memory cells organized as 1 Megabyte by 8 bits, with an access time of 80 nanoseconds | STMicroelectronics, Inc | 3.055 | BOM |
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