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SC-62-3
(insgesamt 20 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| 2SC2873-Y | The 2SC2873-Y transistor features a SOT-89-3 package, suitable for various electronic applications requiring a voltage regulator | TOSHIBA CORP | 6.728 | BOM |
| 2SK2615(TE12L,F) | N-channel silicon MOSFET with a 60-volt rating and a current handling capability of 2 amperes in a 4-pin (3+Tab) PW-Mini package | Toshiba | 9.458 | BOM |
| 2SC2873 | 120@500mA Transistors | Toshiba | 2.445 | BOM |
| 2SK2963 | N-Channel 1000 mA Transistor | Toshiba | 9.481 | BOM |
| 2SC2873-Y(TE12L,ZC | The 2SC2873-Y transistor has a maximum current rating of 500mA and a Vce saturation of 2V at 2A current | Toshiba | 9.458 | BOM |
| PCP1402-TD-H | Single N-Channel Power MOSFET, 250V, 1.2A, 2.4 Ohms, SOT-89 / PCP-2, 1000 Reel | onsemi | 9.458 | BOM |
| 2SK2857-T1-AZ | Aid is limited to customers who have already incorporated these products | Renesas Electronics | 9.458 | BOM |
| 2SA2060(TE12L,F) | Product 2SA2060(TE12L,F) is a Pb-Free power transistor with a minimum order quantity of 1000 and a power dissipation of 2.5W at a frequency of 1MHz | Toshiba | 9.458 | BOM |
| 2SJ355-T1-AZ | Robust P-channel MOSFET with impressive current and voltage handling capabilities | Renesas Electronics | 9.458 | BOM |
| 2SA2060 | 2SA2060 is a general purpose small signal PNP transistor with a maximum current rating of 2000 mA and voltage rating of 50 V | toshiba | 7.680 | BOM |
| 2SC5810(TE12L,F) | SC-62 Packaged Toshiba 2SC5810(TE12L,F) NPN Bipolar Transistor Handles 1A Current at 50V | TOSHIBA CORP | 6.553 | BOM |
| 2SA2070 | 2SA2070 is a PNP silicon transistor designed for general-purpose small signal applications | toshiba | 5.074 | BOM |
| 2SA1483 | PNP Silicon Small Signal Transistor, Lead-Free, General Purpose, 200 mA, 45 V, SC-62 Package, 3 Pins | toshiba | 5.315 | BOM |
| 2SA2059 | Low-power amplifier for low-voltage devices, high efficiency guaranteed | TOSHIBA CORP | 6.092 | BOM |
| 2SJ356-T1-AZ | P-Channel MOSFET 2SJ356 | Renesas | 9.225 | BOM |
| 2SK2615 | High-power N-channel MOSFET for demanding application | Toshiba | 4.020 | BOM |
| 2SK2842 | Reliable operation up to and A drain curre | Toshiba | 2.501 | BOM |
| 2SJ356-T1 | 2SJ356-T1-AZ is a P-CH MOSFET with a drain-source voltage of 60V | Renesas Electronics | 4.988 | BOM |
| 2SK3868(Q,M) | N-Channel 500 V 5A (Ta) 35W (Tc) Through Hole TO-220SIS | Toshiba | 9.458 | BOM |
| 2SJ355-T2-AZ | <p>Support is limited to customers who have already adopted these products.</p> | Renesas Electronics | 9.458 | BOM |
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