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SOT-323-3
(insgesamt 157 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| MTM232230LBF | MTM232230LBF is a MOSFET N-channel MOS FET | Panasonic | 9.458 | BOM |
| DTC124EUAT106 | SOT-323-packaged pre-biased NPN bipolar transistors capable of handling 50 volts and 30 milliamps of current | ROHM Semiconductor | 8.169 | BOM |
| DTA114YUAT106 | High-power transistor for demanding applications | ROHM Semiconductor | 8.757 | BOM |
| DTC114TUAT106 | Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R | ROHM Semiconductor | 5.936 | BOM |
| DTC143ZUA | Digital Transistor DTC143ZUA: NPN Type, Bipolar, SMD Package (SOT323), Operating Range -55 to +150°C, Voltage Rating 50V, Current Rating 0 | Yangjie Technology | 8.727 | BOM |
| DTC123JUAT106 | Product DTC123JUAT106 is an '80@10mA,5V 1 NPN - Pre Biased 200mW 100mA 50V 500nA SOT-323-3 Digital Transistor that is ROHS compliant | ROHM Semiconductor | 8.608 | BOM |
| DMN65D8LW-7 | Diodes Inc DMN65D8LW-7, a 3-pin SOT-323 package MOSFET | Diodes Incorporated | 9.458 | BOM |
| DMP2160UW-7 | Ideal for battery charging/discharging, motor control, and switching applications where high voltage and current are neede | Diodes Incorporated | 7.077 | BOM |
| DMN2004WK-7 | Compact N-Channel MOSFET for efficient power managemen | Diodes Incorporated | 9.458 | BOM |
| DTA114EUAT106 | 100mA PNP Trans Digital BJT 3-Pin UMT T/R | ROHM Semiconductor | 8.249 | BOM |
| BAV199WQ-7 | Product BAV199WQ-7 with 150mA Continuous Current Rating | Diodes Incorporated | 9.458 | BOM |
| BFR181W | BFR181W Transistors Bipolar RF | SIEMENS A G | 6.966 | BOM |
| BAR64-04W | Silicon Pin Diode with 200V Breakdown Voltage in SOT-323 Package | SIEMENS A G | 9.276 | BOM |
| BFR182W | RF Bipolar Transistors: BFR182W | INFINEON TECHNOLOGIES AG | 8.305 | BOM |
| BAS40W-04-7-F | 40V 200mA 5ns 3-Pin SOT-323 | DIODES INC | 8.573 | BOM |
| BCR133W | BCR133W: Transistor, NPN Type, Designed for Automotive Electronics, 50V, 100mA, SOT-323 Package | INFINEON TECHNOLOGIES AG | 7.047 | BOM |
| BCR116W | Small Signal Bipolar Transistor with 0.1A I(C) and 50V V(BR)CEO | INFINEON TECHNOLOGIES AG | 6.522 | BOM |
| BCR141W | Bipolar transistors with pre-biasing | Infineon Technologies | 9.460 | BOM |
| BCR135W | 1A collector current | INFINEON TECHNOLOGIES AG | 7.592 | BOM |
| BCR148W | Pre-biased bipolar transistor BCR148W is designed for specific applications | INFINEON TECHNOLOGIES AG | 8.884 | BOM |
| BCR108W | Bipolar Transistors with Pre-Bias | infineon | 9.204 | BOM |
| BCR183W | 50V breakdown voltage | infineon | 5.724 | BOM |
| BAR63-04W | Product BAR63-04W features a silicon-based PIN diode with a breakdown voltage of 50V, enclosed in a ROHS-compliant package | infineon | 9.864 | BOM |
| BC847BW-7-F | With a power dissipation of 200mW | DIODES INC | 9.056 | BOM |
| BBY66-05W | Compact and reliable devices for efficient power management | infineon | 7.998 | BOM |
| 2SD1949T106R | 2SD1949T106R NPN transistor with 50V voltage rating and 0.5A current rating | ROHM Semiconductor | 9.458 | BOM |
| 2SA1576AT106S | SOT-323 Mounted PNP Bipolar Transistors, Designed for 50V Voltage and 0.15A Current | ROHM CO LTD | 9.200 | BOM |
| 2SC4102T106R | Suitable for high-voltage amplifier circuits in various system | ROHM CO LTD | 7.000 | BOM |
| 2SB1694T106 | Low Power PNP Bipolar Transistor, 30V, 1A, 200mW, SC70, SOT323 | ROHM Semiconductor | 5.886 | BOM |
| BSS138BKW | Robust N-channel transistor with a maximum voltage rating of 60V. (44 chars) | Nexperia | 2.368 | BOM |
| DTA143XUA | Streamline your designs with these pre-biased transistors | Yangjie Technology | 8.559 | BOM |
| BSS138W H6327 | Automotive-Grade N-Channel MOSFET for AEC-Q101 Compliance | infineon | 8.300 | BOM |
| BCR185W | Automotive PNP BJT Transistor with Digital Technology | infineon | 8.160 | BOM |
| BCR166W | The transistor has a low leakage current of 100nA and comes in a SOT-323-3 package | Infineon Technologies | 9.375 | BOM |
| DA204UT106 | 200 mW SMT Diode in UMD-3 package from DA204U Series with 20 V and 100 mA | ROHM Semiconductor | 5.930 | BOM |
| DMN61D9UW-7 | Robust and precise voltage regulator with enhanced safety features | Diodes Incorporated | 9.458 | BOM |
| BAV99WQ-7-F | Ultra-fast switching and low forward voltage drop performance | Diodes Incorporated | 9.458 | BOM |
| BAR64-05W | 150V breakdown voltage PIN diode made of silicon, packaged in a ROHS compliant package-3 | Infineon | 9.458 | BOM |
| BAT6804WH6327XTSA1 | Schottky diode with 8V voltage rating, 0.13A current, SOT-323 package, supplied in tape format (but not on a reel) | Infineon | 9.458 | BOM |
| 2SC4081U3T106R | Small Signal Bipolar Transistor, | ROHM Semiconductor | 9.458 | BOM |
| SI1315DL-T1-GE3 | MOSFET P-CH 8V 0.9A SC70-3 / Trans MOSFET P-CH 8V 0.9A 3-Pin SC-70 T/R | Vishay | 9.458 | BOM |
| RSF014N03TL | Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN | ROHM Semiconductor | 5.623 | BOM |
| MMST3906-7-F | PNP Bipolar Junction Transistor for General Purpose Applications, 40V Voltage Rating, 0.2A Current Rating, 200mW Power Dissipation in SOT-323 Package | Diodes Incorporated | 8.755 | BOM |
| DTC123EUAT106 | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3 | ROHM Semiconductor | 9.916 | BOM |
| DMP2240UW-7 | Trans MOSFET P-CH 20V 1.5A Automotive 3-Pin SOT-323 T/R | Diodes Incorporated | 9.458 | BOM |
| DMN2065UW-7 | Tape and reel packaged N-channel 20V MOSFET with a current rating of 2.8A, in a SOT-323 package | Diodes Incorporated | 9.458 | BOM |
| DTA143EUAT106 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN | ROHM Semiconductor | 5.995 | BOM |
| DTC114EUAT106 | Pre-biased digital NPN bipolar transistors SOT-323 50V 50mA | Rohm Semiconductor | 5.910 | BOM |
| BAT54SW-7-F | BAT54SW-7-F: Low Voltage Schottky Diode Package | Diodes Incorporated | 5.752 | BOM |
| DMN63D8LW-13 | N-Channel MOSFET with 30V VDS and 20±V VGS in Enhancement Mode | Diodes Incorporated | 7.814 | BOM |
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