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SOT-363
(insgesamt 361 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| NTJD4152PT1G | P-Channel MOSFET with 20V Voltage Rating and 0.88A Current Rating | ON | 9.797 | BOM |
| AD5611AKSZ-500RL7 | 10-bit precision DAC housed in a compact SC-70 package with 6 pins | Analog Devices, Inc | 2.693 | BOM |
| UPG2214TK | RF Switches | Renesas | 850 | BOM |
| PMGD400UN | Trans MOSFET N-CH 30V 0.71A 6-Pin TSSOP | NXP Semiconductor | 2.938 | BOM |
| MGA-87563-TR1G | 3V RF Amplifier delivering 12.5dB of signal enhancement | Broadcom Limited | 133 | BOM |
| MAX2634AXT/V+T | Low-Noise Amplification Module for Automotive Remote Keyless Entry Systems | MAXIM | 3.579 | BOM |
| SQ1470AEH-T1_GE3 | Trans MOSFET N-CH 30V 1.7A Automotive 6-Pin SC-70 T/R | VISHAY | 30.000 | BOM |
| DMN62D0UDW | This MOSFET is designed to minimize the on-state resistance (R | DIODES | 9.997 | BOM |
| UPG2214TB-E4 | Ideal for high-frequency amplification, this amplifier chip boasts exceptional performance and efficiency | Cel | 9.914 | BOM |
| UPG2179TB-A | Voltage-powered radio frequency switch for S Band signals | Cel | 8.226 | BOM |
| UPG2009TB | UPG2009TB RF Switch ICs L S Band SPDT Switch product description | Renesas | 5.765 | BOM |
| ABA-52563 | Versatile RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER with optimal performance | Avago Technologies | 5.786 | BOM |
| UPG2155TB-E4-A | Premium RF switch IC for demanding wireless communication systems and device | Cel | 9.997 | BOM |
| UPC2746TB | Boosts Signal Power for Improved Transmission | NEC | 9.458 | BOM |
| UPC3215TB | Wide Band Low Power Amplifier | NEC | 9.458 | BOM |
| TLV431BH6TA | High-reliability voltage regulation for critical electronic devic | DIODES INC | 9.563 | BOM |
| QSBT40-7-F | High-reliability Schottky diode for sensitive circuits, rated at 30V and 0.2A | Diodes Incorporated | 9.424 | BOM |
| DMC2004DWK | MOSFET with Complementary Pair Enhancement Mode | DIDOES | 6.595 | BOM |
| BAS40TW-7-F | SOT-363 package with 6 pins | Diodes Incorporated | 5.912 | BOM |
| NX3L1T3157GW | Can be used as a multiplexer to switch between different inputs or outputs | NXP | 9.458 | BOM |
| BSD316SN | Small Signal Bipolar Transistor BSD316SN | INFINEON TECHNOLOGIES AG | 6.088 | BOM |
| BSD314SPE | P-Channel Silicon FET | infineon | 6.065 | BOM |
| BSD235N | Infineon's BSD235N is a dual N-channel MOSFET transistor with a 950 mA current capacity and 20 V voltage rating, housed in a 6-Pin SOT-363 package | infineon | 8.864 | BOM |
| BSD235C | Low-power Bluetooth 5.1 SoC for wearable devices and beyond | infineon | 5.243 | BOM |
| BCR22PN | BCR22PN is a digital transistor featuring a SOT-363 package, designed to operate at 60V with a current rating of 100mA | Diotec Semiconductor | 9.454 | BOM |
| UPC8112TB-E3-A | 800MHz~2GHz RF Mixer | CEL | 9.458 | BOM |
| MMBD4448HSDW-7-F | Rectifier Diode Small Signal Switching 80V 0.5A 4ns 6-Pin SOT-363 T/R | Diodes Incorporated | 9.338 | BOM |
| BAS40DW-04-7-F | DIODES INC. BAS40DW-04-7-FSmall Signal Schottky Diode, Dual Isolated, 40 V, 40 mA, 1 V, 800 mA, 125 C | DIODES INC | 7.477 | BOM |
| BAV99DW-7-F | BAV99DW Series 2 A 75 V 200 mW Surface Mount Switching Diode Array - SOT-363 | DIODES INC | 7.194 | BOM |
| UPG2179TB-E4-A | RF Switch IC 802.11a/b/g/WiFi, 802.16/WiMax, WLAN SPDT 3 GHz 50Ohm 6-SuperMiniMold | Cel | 5.071 | BOM |
| SD103ATW-7-F | Rectifier diode with Schottky characteristics, capable of conducting 0.175A of current at a maximum reverse voltage of 40V | Diodes Incorporated | 6.801 | BOM |
| QPA0363A | RF Amplifier SiGe HBT MMIC Amplifier Gain Block | QORVO | 5.058 | BOM |
| ABA-31563 | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | AVAGO | 5.563 | BOM |
| UPC2712TB | <p>The UPC2712TB is a 5 V, Super Minimold Silicon Mmic Wideband Amplifier.</p> | NEC | 9.458 | BOM |
| CMKT5087 | Bipolar Transistors - BJT | CENTRAL SEMICONDUCTOR CORP | 9.403 | BOM |
| BAV756S | Diodes - General Purpose, Power, Switching | PHILIPS SEMICONDUCTORS | 8.997 | BOM |
| UPC2763TB | RF Amplifier 3V Med Pwr Amplifier | NEC | 9.458 | BOM |
| UPC2762TB | Wideband Amplifier | NEC | 9.458 | BOM |
| UPC2747TB | Wideband Amplifier | CEL | 9.458 | BOM |
| BC847PN | Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 250mW Surface Mount SOT-363 | DIOTEC SEMICONDUCTOR AG | 8.023 | BOM |
| BG3230 | MOSFET | INFINEON TECHNOLOGIES AG | 6.594 | BOM |
| SI1553DL | Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay | 7.774 | BOM |
| BGA2711 | RF Amplifier MMIC wideband amplifier | NXP SEMICONDUCTORS | 8.762 | BOM |
| PUMB9,125 | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP | Nexperia | 5.247 | BOM |
| PUMD17,115 | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-363 | Nexperia | 6.907 | BOM |
| PMP4501Y,135 | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 100mA 250MHz 300mW Surface Mount 6-TSSOP | Nexperia | 5.966 | BOM |
| PMP5501Y,115 | Precise control and high-speed switching capabilities make it suitable for various devices | Nexperia | 6.290 | BOM |
| BAW101S,115 | Diode Array 2 Independent 300 V 250mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363 | NEXPERIA | 5.803 | BOM |
| SBC857CDW1T1G | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | ON Semiconductor, LLC | 3.368 | BOM |
| ZXCT214ADW-7 | Monitor and control DC voltage levels with this highly accurate power monitoring IC | Diodes Incorporated | 9.357 | BOM |
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