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SOT23
(insgesamt 212 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| ZXM61P03F | MOSFET with P-channel enhancement mode | Diodes Incorporated | 9.583 | BOM |
| BCW66KH | RoHS Compliant Package-3 | Infineon | 6.245 | BOM |
| DMN61D8LQ | Combined Relay and Inductive Load Driver | diodes incorporated | 6.362 | BOM |
| SI2307CDS-T1-E3 | P-Channel 30 V (D-S) MOSFET | VISHAY | 5.744 | BOM |
| 24AA025E64T-I/OT | Serial EEPROM with I2C Interface | Microchip Technology | 5.432 | BOM |
| TL431AIL3T | Shunt Voltage Reference IC Adjustable 2.495V 36 VV ±1% 100 mA SOT-23-3 | STMicroelectronics | 5.178 | BOM |
| BAR43SFILM | Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon | STMICROELECTRONICS | 7.855 | BOM |
| BAR43FILM | Diode 30 V 100mA Surface Mount SOT-23-3 | STMICROELECTRONICS | 7.378 | BOM |
| STM809LWX6F | Monitors power supply for safe operation | Stmicroelectronics | 8.184 | BOM |
| STM809MWX6F | The STM809MWX6F offers precise voltage monitoring and control for demanding systems | ST | 5.200 | BOM |
| IRLML0030TRPBF | Low power consumption of 1.3W at 27mΩ | Infineon | 6.685 | BOM |
| IRLML2030TRPBF | The IRLML2030TRPBF is an N-channel HEXFET Power MOSFET | Infineon | 7.026 | BOM |
| IRLML2244TRPBF | High-power P-channel MOSFET for demanding applications | Infineon | 5.227 | BOM |
| IRLML2246TRPBF | P-Channel MOSFET in Tape and Reel Packaging | Infineon | 9.252 | BOM |
| ZXMN10A07F | ZXMN10A07F: A SOT-23 MOSFET rated for 100V with a resistance of 700mΩ, meeting ROHS requirements | diodes incorporated | 5.884 | BOM |
| ZXMP6A13F | P-Channel Enhancement Mode MOSFET, Product ZXMP6A13F, is described as follows:" | diodes incorporated | 5.514 | BOM |
| BZX84-B16 | Precision voltage regulation for modern electronics | Diotec Semiconductor | 2.087 | BOM |
| BAT54S | BAT54S: The perfect choice when you need a small | Onsemi | 5.595 | BOM |
| FMMT413 | FMMT413 Product Description: Small Signal Bipolar Transistor, NPN, Silicon | diodes incorporated | 5.465 | BOM |
| ZXMN3A14F | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 7.530 | BOM |
| ZXMN2F34FH | N-type Transistor | diodes incorporated | 8.177 | BOM |
| ZXMN3B14F | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 5.952 | BOM |
| ZXMN2B14FH | Silicon Metal-oxide Semiconductor FET in SOT-23 package with 3 pins | diodes incorporated | 5.122 | BOM |
| ZXMP3A13F | Low Power Consumption FET, Ideal for Portable Electronics | diodes incorporated | 8.564 | BOM |
| ZVP1320F | Metal oxide semiconductor field-effect transistor | diodes incorporated | 8.562 | BOM |
| ZVN3320F | N-channel MOSFET ZVN3320F operates in enhancement mode | Diodes Incorporated | 6.460 | BOM |
| ZXTN25020DFH | NPN, 20V, 4.5A, SOT23 | diodes incorporated | 6.317 | BOM |
| FMMT634 | FMMT634 Darlington Transistors | diodes incorporated | 9.301 | BOM |
| FMMT620 | Offers exceptional voltage handling and speed, making it a popular selection for DC-DC converters and inverter | diodes incorporated | 7.252 | BOM |
| FMMT555 | FMMT555: Bipolar Junction Transistors | diodes incorporated | 5.738 | BOM |
| FMMT591A | ROHS compliant BJT Bipolar Transistors | Diodes Incorporated | 9.172 | BOM |
| FMMT493A | Robust and reliable components for advanced electronic designs | diodes incorporated | 7.026 | BOM |
| DMN2075U | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 6.392 | BOM |
| DMN3300U | DMN3300U: N-Channel Enhancement Mode MOSFET Product Description | diodes incorporated | 8.535 | BOM |
| DMP2004K | Enhancement Mode P-Channel MOSFET | diodes incorporated | 9.948 | BOM |
| DDTC123ECA | Bipolar Transistors with Predetermined Bias | diodes incorporated | 9.036 | BOM |
| BAP64-05 | Diode made of silicon | NXP Semiconductors | 6.752 | BOM |
| BAS40-04 | Efficient voltage regulator and current limiter for electronic circuit | GOOD-ARK ELECTRONICS CO LTD | 9.665 | BOM |
| BAP64-06 | PIN diode made of silicon | micro commercial components (mcc) | 5.433 | BOM |
| 5JL2CZ47 | High-power TO220NIS2 diode for phase-out and obsolete use cases | TOSHIBA CORP | 9.267 | BOM |
| 2SA1464-T1B-A | Transistors - BJT | Renesas Electronics | 9.458 | BOM |
| SSM3J15F | 100mA, 30V FET transistor | Toshiba | 9.458 | BOM |
| BCX42E6327 | BCX42E6327: An Infineon-manufactured PNP Bipolar Transistor, designed for applications up to 800 mA and 125 V, enclosed in a 3-Pin SOT-23 package | Infineon Technologies Corporation | 3.655 | BOM |
| AD8638ARJZ | Compact 16V CMOS device offers high gain | Analog Devices, Inc | 3.644 | BOM |
| AD8061ART | High-quality component for amplifying low-level signals accurately | Analog Devices, Inc | 2.041 | BOM |
| ZXTP2039F | Explore the features of ZXTP2039F, a Bipolar Junction Transistor (BJT) product | diodes incorporated | 7.018 | BOM |
| ZXTP2025F | Bipolar transistors - BJT | diodes incorporated | 5.302 | BOM |
| ZXMN2B01F | Small signal field-effect transistor with a drain current of 0 | diodes incorporated | 9.363 | BOM |
| XC6206P331MR-G | This LDO voltage regulator ensures stable output voltage even under varying input conditions | TOREX | 3.688 | BOM |
| NX2301P | Ideal for low voltage applications requiring high efficiency and space-saving design | nexperia | 9.493 | BOM |
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