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TO-220NIS
(insgesamt 25 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| 2SC3710A | NPN Silicon Power Transistor | Toshiba | 9.458 | BOM |
| 2SK3067 | TO-220NIS-packaged N-type Silicon MOSFET capable of handling up to 600 volts and 2 amperes of current | Toshiba | 6.782 | BOM |
| 2SK2543 | General-purpose MOSFET delivering exceptional voltage control | Toshiba | 5.550 | BOM |
| 2SC5000 | 3-Pin (3+Tab) Configuration | Toshiba | 6.421 | BOM |
| 2SK4111 | N-type Silicon Power MOSFET with 600V Voltage Rating and 10A Current Rating | Toshiba | 9.365 | BOM |
| 2SA1930(Q) | PNP transistor with exceptional performance characteristics: high voltage, current, and power handling | toshiba | 9.779 | BOM |
| TA7808S | High-quality output up to 8V and 1A current capacity | Toshiba | 7.393 | BOM |
| SM16JZ47A | Three-Pin (Three Plus Tab) TO-220NIS TRIAC capable of 600V and 165A | toshiba | 8.120 | BOM |
| 2SJ334(F) | TO-220NIS Package P-Channel Silicon MOSFET | Toshiba | 9.293 | BOM |
| 2SD2271 | Trans Darlington NPN 200V 12A 2000mW TO-220NIS 3-Pin (3+Tab) | Toshiba | 9.844 | BOM |
| 2SD1415A(F) | TO-220NIS Trans Darlington NPN 100V 7A 2000mW | Toshiba | 6.798 | BOM |
| 2SA1931 | Bipolar Transistors - BJT 220NIS1 PLS PLNN,DISCONTINUED | toshiba | 9.381 | BOM |
| 2SA1837(F) | 230V 1A PNP Bipolar Junction Transistor with TO-220NIS Package | Toshiba | 8.975 | BOM |
| 2SA1837 | Reliable and efficient device for electronics project | Toshiba | 9.458 | BOM |
| 2SK2312(F) | Toshiba | 6.625 | BOM | |
| TA7805S(Q) | Standard Regulator Pos 5V 1A 3-Pin(3+Tab) TO-220NIS | Toshiba | 5.963 | BOM |
| 2SK2965 | MOSFET N-ch, 200V, 11A, 0.26 ohm | TOSHIBA CORP | 9.493 | BOM |
| 2SC5172 | Bipolar Junction Transistor NPN 400V 5A TO-220NIS | Toshiba | 6.744 | BOM |
| TA7812S | This compact and reliable V regulator is suitable for various industrial | Toshiba | 2.236 | BOM |
| 2SC5171 | Reliable NPN bipolar junction transistor for general-purpose us | Toshiba | 7.785 | BOM |
| TA7805S | Compact power management solution for modern devices | Toshiba | 5.443 | BOM |
| GT10J303(Q) | N-channel IGBT with high voltage and current ratin | Toshiba | 3.322 | BOM |
| 2SA1930 | TO-B package bipolar junction transistor (BJT) for reliable operatio | Toshiba | 5.401 | BOM |
| 2SA1837,F(J | Bipolar (BJT) Transistor PNP 230 V 1 A 70MHz 2 W Through Hole TO-220NIS | Toshiba Semiconductor and Storage | 9.802 | BOM |
| 2SC4793,F(J | Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS | Toshiba Semiconductor and Storage | 8.880 | BOM |
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