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TO-247
(insgesamt 372 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| TK35N65W5,S1F | N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247 | Toshiba | 6.128 | BOM |
| TK49N65W,S1F(S | Trans MOSFET N-CH Si 650V 49.2A 3-Pin(3+Tab) TO-247 Tube | TOSHIBA | 5.588 | BOM |
| STGW20IH125DF | IGBT Trench Field Stop 1250 V 40 A 259 W Through Hole TO-247 | STMicroelectronics | 5.270 | BOM |
| STGW20H60DF | IGBT Trench Field Stop 600 V 40 A 167 W Through Hole TO-247 | STMicroelectronics | 5.788 | BOM |
| GT30N135SRA,S1E | Trans IGBT Chip N-CH 1350V 60A 348W Tube | Toshiba | 5.275 | BOM |
| SICW40C120 | SiC Schottky Diode, TO-247-3L, 1 | Diotec Semiconductor | 6.936 | BOM |
| FCH130N60 | MOSFET SuperFET2 600V, 130mohm | onsemi | 9.024 | BOM |
| GT20N135SRA,S1E | Trans IGBT Chip N-CH 1350V 40A 312W 3-Pin(3+Tab) TO-247 T/R | Toshiba | 6.841 | BOM |
| RFN30TS6DGC11 | Diode Array 1 Pair Common Cathode 600 V 15A Through Hole TO-247-3 | ROHM Semiconductor | 8.569 | BOM |
| STTH31AC06SWL | Diode 600 V 30A Through Hole TO-247 | STMicroelectronics | 6.331 | BOM |
| STTH60AC06CW | Diode Array 1 Pair Common Cathode 600 V 30A Through Hole TO-247-3 | STMicroelectronics | 6.656 | BOM |
| RFUH30TS6SGC11 | Diode 600 V 15A Through Hole TO-247 | ROHM Semiconductor | 8.206 | BOM |
| FCH47N60F-F085 | MOSFET NMOS TO247 600V 47 MOHM | onsemi | 8.151 | BOM |
| FCH170N60 | MOSFET SuperFET2 600V, 170mohm | onsemi | 5.777 | BOM |
| SR3020C | Schottky Diodes & Rectifiers 20A 30V Schottky | Rectron | 9.458 | BOM |
| DGTD65T40S1PT | Trans IGBT Chip N-CH 650V 80A 341W 3-Pin(3+Tab) TO-247 Tube | Diodes Incorporated | 9.151 | BOM |
| TK62N60W5,S1VF | Trans MOSFET N-CH Si 600V 61.8A TO-247 Magazine | Toshiba | 8.582 | BOM |
| TK31N60W,S1VF | Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube | Toshiba | 9.687 | BOM |
| R6077VNZ4C13 | Trans MOSFET N-CH 600V 77A 3-Pin(3+Tab) TO-247 | ROHM Semiconductor | 8.582 | BOM |
| R6076KNZ4C13 | N-Channel 600 V 76A (Tc) 735W (Tc) Through Hole TO-247 | ROHM Semiconductor | 5.544 | BOM |
| R6076ENZ1C9 | N-Channel 600 V 76A (Tc) 120W (Tc) Through Hole TO-247 | ROHM Semiconductor | 8.022 | BOM |
| IPZ60R041P6 | MOSFET HIGH POWER_LEGACY | Infineon Technologies Corporation | 3.407 | BOM |
| IPW60R090CFD7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.232 | BOM |
| IPW60R055CFD7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.210 | BOM |
| PSMN040-200W,127 | N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247 | NXP | 9.606 | BOM |
| NGTB20N135IHRWG | IGBT Trench Field Stop 1350 V 40 A 394 W Through Hole TO-247 | onsemi | 5.675 | BOM |
| NGTB15N120FLWG | Trans IGBT Chip N-CH 1200V 30A 156W 3-Pin(3+Tab) TO-247 Tube | onsemi | 6.335 | BOM |
| TSM60NB041PW C1G | Trans MOSFET N-CH 600V 78A 3-Pin(3+Tab) TO-247 Tube | Taiwan Semiconductor | 9.857 | BOM |
| DHG20I600HA | Diode 600 V 20A Through Hole TO-247 | IXYS | 7.055 | BOM |
| TK28N65W,S1F | N-Channel 650 V 27.6A (Ta) 230W (Tc) Through Hole TO-247 | Toshiba | 8.356 | BOM |
| TK14N65W5,S1F | Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube | Toshiba | 6.185 | BOM |
| TK14N65W,S1F | N-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-247 | Toshiba | 7.739 | BOM |
| IXFH48N60X3 | N-Channel Enhancement Mode Power MOSFET | IXYS | 5.853 | BOM |
| IXFH32N100X | Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) TO-247 Bulk | IXYS | 6.724 | BOM |
| IXFH30N60X | X-CLASS HIPERFET POWER MOSFET | IXYS | 7.027 | BOM |
| IXFH26N65X2 | N-Channel Enhancement Mode Power MOSFET | IXYS | 9.458 | BOM |
| IXFH26N100X | N-Channel 1000 V 26A (Tc) 860W (Tc) Through Hole TO-247 | IXYS | 5.176 | BOM |
| IXFH220N06T3 | N-Channel 60 V 220A (Tc) 440W (Tc) Through Hole TO-247 | IXYS | 6.566 | BOM |
| DMA50I800HA | Standard Rectifier | IXYS | 9.824 | BOM |
| TW045N120C,S1F | N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247 | Toshiba | 8.869 | BOM |
| IPZ60R125P6 | MOSFET HIGH POWER_LEGACY | Infineon Technologies Corporation | 3.752 | BOM |
| IPW65R029CFD7 | Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. | Infineon Technologies Corporation | 3.265 | BOM |
| IPW60R024CFD7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.158 | BOM |
| PSMN009-100W,127 | Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-247 Rail | NXP | 9.263 | BOM |
| APT100D60B2G | Rectifiers FRED D 600 V 100 A TO-247 MAX | Microchip | 5.882 | BOM |
| SCS240KE2HRC11 | Diode Array 1 Pair Common Cathode 1200 V 20A (DC) Through Hole TO-247-3 | ROHM Semiconductor | 5.342 | BOM |
| SCS230KE2HRC11 | Diode Array 1 Pair Common Cathode 1200 V 15A (DC) Through Hole TO-247-3 | ROHM Semiconductor | 5.088 | BOM |
| SCS220KE2HRC | Diode Array 1 Pair Common Cathode 650 V 10A (DC) Through Hole TO-247-3 | ROHM Semiconductor | 7.423 | BOM |
| SCS220AE2HRC | Diode Array 1 Pair Common Cathode 650 V 10A (DC) Through Hole TO-247-3 | ROHM Semiconductor | 9.443 | BOM |
| SCS215AEGC11 | Diode 650 V 15A Through Hole TO-247 | ROHM Semiconductor | 6.689 | BOM |
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