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TO-3PL
(insgesamt 13 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| MJL21195G | Bipolar (BJT) Transistor PNP 250 V 16 A 4MHz 200 W Through Hole TO-264 | ON Semiconductor, LLC | 2.475 | BOM |
| 2SC5144 | Versatile BIP-type power transistor for a wide range of industrial and commercial uses | Toshiba | 7.300 | BOM |
| GT60N321(Q) | IGBT 1000V 60A 170W TO3P LH | Toshiba Semiconductor and Storage | 6.940 | BOM |
| 2SD1525 | Excellent choice for audio equipment, motor control systems, and industrial automation | Sptech | 7.866 | BOM |
| 2SC5570 | Phase-out notice: obsolete high-voltage bipolar transistor, no longer available for purchase or repair, EOL since 2010 | Toshiba | 5.983 | BOM |
| GT25Q102 | Trans IGBT Chip N-CH 1200V 25A 200mW 3-Pin(3+Tab) TO-3PL | Toshiba | 9.747 | BOM |
| 2SK2267 | TRANSISTOR 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power | TOSHIBA CORP | 5.352 | BOM |
| 2SK1544 | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04), | TOSHIBA CORP | 5.171 | BOM |
| 2SA1943 | High-power switching transistor for efficient energy managemen | Onsemi | 4.203 | BOM |
| GT60N321 | Versatile N-channel IGBT suitable for motor drives, power supplies, and mor | Toshiba | 5.508 | BOM |
| GT50J121 | High-power electronic component for demanding applications | Toshiba | 3.611 | BOM |
| 2SC3281 | High-gain transistor for amplifier applicatio | Sptech | 3.451 | BOM |
| 2SB1429 | Premium BJT ROHS compliant for industrial and commercial use cases | Sptech | 5.427 | BOM |
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