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VFBGA-200
(insgesamt 97 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| MT53D1024M32D4DT-053 AAT:D | 200-pin Very Fine Ball Grid Array package | Micron Technology | 7.612 | BOM |
| MT53D512M32D2DS-053 AAT:D | Enhanced mobility and performance for in-car infotainment systems | Micron Technology | 8.238 | BOM |
| MT53E256M32D2DS-053 AIT:B | 8,589,934,592-bit memory capacity | Micron Technology | 5.675 | BOM |
| MT53D512M32D2DS-053 AIT:D | This memory module boasts a 16G capacity and features a 512MX32 layout in a FBGA DDP package | Micron Technology | 6.138 | BOM |
| MT53E256M32D2DS-053 WT:B | 8Gbit 256Mx32 Memory Chip | Micron Technology | 8.741 | BOM |
| MT53E512M32D2NP-046 | Elevate your mobile or cloud-based operations with superior memory capabilities | Micron Technology | 8.209 | BOM |
| MT53D512M32D2DS-046 AAT:D | AEC-Q100 certified LPDDR4 RAM for automotive applications | Micron | 6.554 | BOM |
| MT53E512M32D2NP-046 WT:E | WT:E MT53E512M32D2NP-046 DRAM LPDDR4 16G 512MX32 FBGA WT DDP | Micron Technology | 6.554 | BOM |
| MT53E2G32D8QD-046 WT:E | MT53E2G32D8QD-046 WT:E Product Description | Micron Technology Inc. | 7.469 | BOM |
| MT53E1G32D2FW-046 AUT:A | Cutting-edge LPDDR4 technology with 32GB capacity | Micron Technology | 6.554 | BOM |
| MT53E1G32D2FW-046 WT:A | High-performance memory solution for mobile devices, boasting Gbit capacity and GHz frequenc | Micron Technology | 6.554 | BOM |
| MT53D512M32D2DS-046 AUT:D | LPDDR4 16GB Automotive RAM Memory | Micron Technology | 9.458 | BOM |
| MT53E1G32D4NQ-046 WT:E | DRAM LPDDR4 32G 1GX32 FBGA WT QDP | Micron Technology Inc. | 7.172 | BOM |
| MT53E2G32D4DT-046 WT:A | 2G X 32 memory chip designed for industrial temperature environments | Micron Technology | 7.318 | BOM |
| MT53D512M32D2DS-053 AUT:D TR | Low power DDR4 memory module with 16GB capacity | Micron Technology | 2.499 | BOM |
| MT53E128M32D2DS-046 WT:A TR | Mobile LPDDR4 DRAM Chip | Micron Technology | 7.813 | BOM |
| MT53E128M32D2DS-053 AUT:A | Automotive-grade 4Gb LPDDR4 SDRAM for mobile devices | Micron Technology | 6.676 | BOM |
| MT53E768M32D4DT-046 AAT:E | Vehicle Grade Memory | Micron Technology | 3.801 | BOM |
| MT53E512M64D4RQ-046 WT:F | Upgrade your system's processing capabilities with this fast DDR4 SDRAM chip | Micron Technology | 6.019 | BOM |
| MT53D1536M64D8JL-046 WT:A | Compact LPDDR4 modules for next-generation devices | Micron Technology | 5.288 | BOM |
| MT53E512M64D4HJ-046 AUT:D | Energy-efficient GB LPDDRmemory for data center | Micron Technology | 3.484 | BOM |
| MT53E512M32D4NQ-053 RS WT:F | High-performance memory for demanding applications featuring advanced LPDDR4 technology and QDP design | Micron Technology | 7.106 | BOM |
| MT53E1G32D4NQ-046 WT:F | Advanced memory module for high-speed data transfer | Micron Technology | 6.720 | BOM |
| MT53E1536M32D4DT-046 AIT:A | High-Speed Memory Solution for Automotive Application | Micron Technology | 4.161 | BOM |
| MT53E1536M32D4DT-046 AAT:A | High-performance memory for demanding applications | Micron Technology | 7.677 | BOM |
| MT53E512M64D4NK-053 WT:D TR | Advanced LPDDR4 technology enables fast and power-efficient data transfer (67) | Micron Technology | 6.490 | BOM |
| MT53E384M32D2DS-053 AUT:E TR | Compact and efficient LPDDR SDRAM solutio | Micron Technology | 3.256 | BOM |
| MT53E128M16D1DS-053 AAT:A TR | Compact SDRAM chip for efficient data storage | Micron Technology | 3.055 | BOM |
| MT53D512M32D2DS-046 WT:D TR | Advanced LPDDRtechnology for enhanced performance and energy efficienc | Micron Technology | 2.386 | BOM |
| MT53D4DADT-DC | Advanced memory solution for high-performance application | Micron Technology | 3.875 | BOM |
| MT53D1024M64D8PM-053 WT:D | High-performance memory solution for modern device | Micron Technology | 7.068 | BOM |
| MT53E2G64D8TN-046 AAT:A | Low-Power, High-Speed LPDDR4 Memory Solution for Modern Computing Needs - Trays, Enhancing User Experience | Micron Technology | 7.807 | BOM |
| MT53E2G64D8TN-046 WT:A | High-density DRAM for improved performanc | Micron Technology | 6.829 | BOM |
| MT53E1536M64D8HJ-046 AAT:B | Ultra-fast LPDDR4 RAM solution for data centers, servers, and other high-speed computing environments | Micron Technology | 2.568 | BOM |
| MT53E2G32D4DT-046 AAT:A TR | Effortlessly upgrade your computing experience with high-capacity LPDDR memo | Micron Technology | 3.673 | BOM |
| MT53E1G64D4HJ-046 WT:A | Reliable and efficient memory technology for big data analytics, cloud computing, and IoT application | Micron Technology | 7.720 | BOM |
| MT53E768M64D4HJ-046 AIT:B | Low-power DDRDRAM module optimized for cloud computing, gaming, and AI workloads | Micron Technology | 5.705 | BOM |
| MT53E512M64D4HJ-046 AAT:D | Low-power consumption and high-speed data transfer capabilities | Micron Technology | 2.377 | BOM |
| MT53E1G32D2FW-046 WT:A TR | Expression : Cutting-edge technology for memory-intensive devices: MTEDW-WT:A T | Micron Technology | 4.363 | BOM |
| MT53E768M32D4DT-046 WT:E TR | High-performance DRAM solution for demanding applications | Micron Technology | 3.231 | BOM |
| MT53E1G16D1FW-046 AIT:A TR | Reliable FBGA packaged DRAM module for industrial u | Micron Technology | 4.918 | BOM |
| MT53E256M32D2FW-046 AIT:B TR | Up to B capacity for efficient handling of large dataset | Micron Technology | 7.101 | BOM |
| MT53E384M32D2DS-046 AUT:E TR | Enhanced performance through advanced LPDDRtechnolog | Micron Technology | 5.485 | BOM |
| MT53E256M32D2DS-046 IT:B TR | Ultra-efficient memory solution for data-intensive systems and applications requiring low power consumptio | Micron Technology | 3.577 | BOM |
| MT53E384M32D2DS-053 AAT:E TR | High-Speed LPDDRMemory for and AI Workload | Micron Technology | 6.196 | BOM |
| MT53E256M32D2DS-046 WT:B TR | High-performance memory solution for data-intensive applications | Micron Technology | 2.377 | BOM |
| MT53E384M32D2FW-046 WT:E | Low-power DDRRAM for efficient computing solution | Micron Technology | 2.610 | BOM |
| MT53E256M16D1FW-046 AIT:B TR | High-speed, low-power DDRmodule for data-intensive tasks | Micron Technology | 7.955 | BOM |
| MT53E128M32D2DS-046 AAT:A TR | LPDDRSDRAM Memory Module for Android Phone | Micron Technology | 4.431 | BOM |
| MT53E256M16D1DS-046 WT:B TR | x FBGA package with B of LPDDRRAM for space-constrained designs | Micron Technology | 5.709 | BOM |
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