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VFBGA-63
(insgesamt 70 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| MT29F4G08ABBDAH4 | Enhance your digital life with this robust MT29F4G08ABBDAH4 NAND flash memory chip by Micron | MICRON | 6.554 | BOM |
| W29N04GVBIAA | 4Gb SLC NAND Flash Memory featuring standardized 2KB+64B page size | Winbond | 6.554 | BOM |
| W29N08GVBIAA | Compact, high-reliability memory module for embedded systems | Winbond | 9.964 | BOM |
| NAND01GW3B2AZA6E | Flash NAND Storage | STMICROELECTRONICS | 6.554 | BOM |
| MT29F4G08ABBFAH4-IT:F | Industrial-grade -pin VFBGA packaged SLC NAND Flash memory for demanding systems | micron technology | 6.095 | BOM |
| MT29F4G08ABAFAH4-IT:F | Compact -pin VFBGA packaging allows for seamless integration into existing system | micron technology | 8.822 | BOM |
| W29N02GVBIAA | SLC NAND Flash Parallel 3V/3.3V 2G-bit 256M x 8 25ns Automotive 63-Pin VFBGA | WINBOND ELECTRONICS CORP | 6.554 | BOM |
| MT29F16G08ADACAH4-IT | Flash, | MICRON TECHNOLOGY INC | 6.554 | BOM |
| MT29F4G08ABAEAH4 | IC FLASH 4GBIT PARALLEL 63VFBGA | MICRON | 6.554 | BOM |
| NAND01GR3B2CZA6 | 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | STMicroelectronics, Inc | 2.551 | BOM |
| W29N01HVBINF TR | NAND flash memory module W29N01HVBINF TR | Winbond | 7.122 | BOM |
| IS34MW02G084-BLI | High-density storage solution for embedded systems and IoT applications, featuring advanced error correction capabilitie | Issi | 3.144 | BOM |
| IS34ML02G081-BLI-TR | Advanced data storage technology in a small footprint, offering 2Gb capacity and 63-Pin VFBGA Surface Mount T/R package for industrial applications | Issi | 6.884 | BOM |
| W29N01HZBINF TR | High-Speed Data Storage Solution for Embedded Systems | Winbond | 2.235 | BOM |
| MT29F4G16ABBFAH4-AAT:F TR | High-density storage solution for modern application | Micron Technology | 7.569 | BOM |
| W29N01HWBINA | Advanced memory solution for industrial applications, offering x parallel interfaces and ECC x error correction | Winbond | 7.631 | BOM |
| IS34MW01G084-BLI | Advanced NAND Flash technology with enhanced data integrity | Issi | 2.851 | BOM |
| MT29F1G08ABAFAH4-AAT:F TR | Advanced flash storage solution with high-speed interface, low latency, and high endurance for demanding industrial and automotive system | Micron Technology | 7.794 | BOM |
| MT29F2G08ABBGAH4-AAT:G TR | 256Mbit SLC NAND Flash memory with fast read and write speeds | Micron Technology | 3.391 | BOM |
| MT29F2G16ABBGAH4-AAT:G TR | Compact, high-density storage for efficient system design and deployment ( character | Micron Technology | 6.922 | BOM |
| MT29F4G08ABBFAH4-AIT:F TR | Advanced NAND flash technology for reliable data retention | Micron Technology | 2.020 | BOM |
| MT29F4G08ABBDAHC-IT:D TR | High-density storage solution for embedded systems and automotive applications, featuring advanced SLC NAND flash technology | Micron Technology | 2.763 | BOM |
| MT29F4G08ABBFAH4-AIT:F | Industrial-grade memory solution for high-performance automotive electronics | Micron Technology | 3.244 | BOM |
| MT29F4G08ABBFAH4-AAT:F | Advanced memory for automotive applications: SLC NAND Fla | Micron Technology | 2.174 | BOM |
| MT29F4G08ABAFAH4-AIT:F | Advanced memory technology for next-generation in-vehicle infotainment systems and autonomous driving application | Micron Technology | 4.041 | BOM |
| MT29F4G08ABAFAH4-AAT:F | Advanced memory technology offering enhanced performance, endurance, and scalability for a wide range of industrial and automotive uses | Micron Technology | 2.996 | BOM |
| MT29F1G16ABBFAH4-IT:F | Reliable SLC NAND flash for long-term data integri | Micron Technology | 4.218 | BOM |
| MT29F8G08ABACAH4-ITS:C | Massive Capacity Flash Storage for Next Generation Computi | Micron Technology | 6.016 | BOM |
| MT29F2G08ABAGAH4-ITE:G | Advanced NAND flash technology with read speeds up to 1333 Mbps (68 characters) | Micron Technology | 2.788 | BOM |
| MT29F1G16ABBEAH4-AITX:E | With its high reliability | Micron Technology | 6.071 | BOM |
| MT29F8G16ADBDAH4-AIT:D TR | Future-proof storage for diverse industries and market | Micron Technology | 6.612 | BOM |
| MT29F4G08ABADAH4-AITX:D TR | High-performance, low-power memory solution for next-generation devices | Micron Technology | 7.432 | BOM |
| MT29F4G08ABADAH4-AATX:D TR | Industrial-grade storage device for harsh conditions | Micron Technology | 3.191 | BOM |
| MT29F2G16ABBEAHC-AIT:E TR | High-density, low-latency storage for demanding applications | Micron Technology | 3.802 | BOM |
| MT29F2G08ABAEAH4-AITX:E TR | High-density memory for automotive applicatio | Micron Technology | 3.341 | BOM |
| MT29F1G16ABBEAH4-ITX:E TR | Compact and energy-efficient design for space-constrained syste | Micron Technology | 7.237 | BOM |
| MT29F1G16ABBEAH4-ITX:E | Advanced flash memory technology for reliable data retention | Micron Technology | 4.598 | BOM |
| MT29F1G08ABBEAH4-IT:E TR | Industrial-grade NAND Flash Memory for mission-critical applications that require high endurance and low latenc | Micron Technology | 4.183 | BOM |
| MT29F1G08ABBEAH4-IT:E | Large storage capacity of 128M x 8 bits for extensive data storage | Micron Technology | 4.638 | BOM |
| MT29F1G08ABAEAH4-AATX:E TR | Compact, high-capacity storage for embedded systems, devices and application | Micron Technology | 4.162 | BOM |
| MT29F2G08ABBGAH4-IT:G TR | Robust performance, power efficiency, and durability make this product suitable for demanding industrial environments | Micron Technology | 7.124 | BOM |
| MT29F1G08ABAFAH4-ITE:F TR | SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 63-Pin VFBGA T/R | Micron Technology | 3.824 | BOM |
| NAND02GR3B2CZA6E | Low-power consumption flash memory for portable devices and IoT devices | Micron Technology | 3.190 | BOM |
| MT29F8G08ADAFAH4-AAT:F | NAND Flash SLC 8G 1GX8 FBGA DDP | Micron Technology | 6.108 | BOM |
| MT29F4G16ABBFAH4-AAT:F | Ball Grid Array 63VF | Micron Technology | 4.113 | BOM |
| MT29F1G08ABBEAH4-AITX:E | Automotive-grade 1G-bit 8-bit SLC NAND Flash in VFBGA package | Micron Technology | 3.535 | BOM |
| MT29F1G08ABAEAH4-AITX:E | M68M NAND FLASH 128MX8 PLASTIC PBF VFBGA 3.3V MASS STORAGE AUTOMOTIVE TEMP | Micron Technology | 6.447 | BOM |
| MT29F8G08ADADAH4-IT:DTR | FLASH - NAND Memory IC 8Gbit Parallel 63-VFBGA (9x11) | Micron Technology | 6.323 | BOM |
| IS34ML01G084-BLI-TR | SLC NAND Flash memory chip with a parallel interface, operating at 3 | Issi | 5.086 | BOM |
| MT29F2G16ABBGAH4-AIT:G TR | FLASH - NAND (SLC) Memory IC 2Gbit Parallel 63-VFBGA (9x11) | Micron Technology | 7.171 | BOM |
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