2N3029

Teilpunkte

• The 2N3029 is a silicon NPN power transistor commonly used in electronic circuits for amplification and switching applications. It has a maximum collector current of 4 amperes and a maximum collector-base voltage of 80 volts. The transistor is housed in a TO-39 package and has three terminals: base, collector, and emitter. It is widely available and well-suited for medium-power applications in various electronic devices.

• Equivalent

  The equivalent products of the 2N3029 chip include NTE253, JE305, ECG253, and SK3139.

• Features

  The 2N3029 is a high-power NPN transistor with a maximum collector current of 15 A, a collector-emitter voltage rating of 150 V, and a power dissipation of 115 W. It features a TO-3 package and is commonly used in power amplification applications.

• Pinout

  The 2N3029 is a bipolar junction transistor (BJT) with 3 pins. It belongs to the NPN (Negative-Positive-Negative) transistor family. The pin configuration consists of the base (B), collector (C), and emitter (E). The base pin is responsible for controlling the current flow between the collector and emitter.

• Manufacturer

  The 2N3029 is manufactured by Motorola Semiconductor. It is a multinational company known for developing and manufacturing electronic devices and components, including semiconductors, integrated circuits, and sensors.

• Application Field

  The 2N3029 is a high-power NPN transistor commonly used in applications such as audio amplification, motor control, and power switching. It can handle high currents and voltages, making it suitable for various industrial and consumer electronics applications.

• Package

  The 2N3029 chip is an NPN silicon transistor typically used for general-purpose amplification and switching. It comes in a TO-39 package, which is a metal can package with a through-hole mounting style. The specific dimensions of the package are approximately 9.27mm in height, 10.5mm in diameter, and 4.45mm in lead length.