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48-TFBGA
(insgesamt 415 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
XCF32PFS48C | CSP-48(8x9) Memory - Configuration Proms for ROHS FPGAs | Amd | 6.086 | BOM |
XCF08PFS48C | XCF08P - PROMs for Configuration | Amd | 9.929 | BOM |
CY62177DV30LL-55BAXI | High-density, low-voltage SRAM for reduced power consumption | Infineon Technologies | 5.185 | BOM |
IS61WV204816BLL-10BLI | 2Mx16 Memory Module | ISSI, Integrated Silicon Solution Inc | 6.715 | BOM |
CY7C1071DV33-12BAXI | SRAM memory module, 32MB capacity, operating temperature range of -40 to 85 degrees Celsius | Infineon Technologies | 5.999 | BOM |
IS61WV51216BLL-10MLI | Standard SRAM, 512KX16, 10ns, CMOS, PBGA48 | ISSI, Integrated Silicon Solution Inc | 6.075 | BOM |
SST39VF1601-70-4I-B3KE | NOR Flash Parallel 3.3V 16M-bit 1M x 16 70ns 48-Pin TFBGA Tray | MICROCHIP | 8.652 | BOM |
XCF32PFSG48C | This XCFPFSGC FPGA chip is an integrated circuit designed for programming and reconfiguring electronic devices | Amd | 6.994 | BOM |
IS61WV102416BLL-10MI | IS61WV102416BLL-10MI is a high-speed static random access memory (SRAM) with a capacity of 16 megabits and operates at 3.3 volts | Issi | 8.573 | BOM |
MK65FN2M0VMI18 | Kinetis MCU with RISC architecture for high-performance computing tasks | NXP Semiconductor | 3.188 | BOM |
XCF16PFS48C | Memory for FPGA Configuration | Amd | 5.015 | BOM |
RMLV1616AGBG-5S2#AC0 | SRAM Memory IC 16Mbit Parallel 55 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2.249 | BOM |
SST38VF6401-90-5I-B3KE | FLASH Memory IC 64Mbit Parallel 90 ns 48-TFBGA (6x8) | Microchip Technology | 9.695 | BOM |
SST39VF800A-70-4C-B3KE | The SST39VF800A-70-4C-B3KE is a parallel NOR flash chip, providing a storage capacity of 8M-bit with a data width of 512K x 16 | Microchip Technology | 5.899 | BOM |
M29W320EB70ZE6F | Advanced 2MB Flash Solution for Industrial Applications | Micron Technology Inc. | 9.869 | BOM |
IS61LV25616AL-10BI | Asynchronous Memory | ISSI, Integrated Silicon Solution Inc | 8.177 | BOM |
IS66WVE4M16EALL-70BLI | With a capacity of 4Mx16, the IS66WVE4M16EALL-70BLI is a Cellular RAM Pseudo SRAM designed to operate within a voltage range of 1 | ISSI, Integrated Silicon Solution Inc | 8.232 | BOM |
IS66WVE4M16BLL-70BLI | PSRAM Async Single Port 64M-bit 4M x 16 70ns 48-Pin FBGA | ISSI, Integrated Silicon Solution Inc | 8.495 | BOM |
IS66WVE4M16EBLL-55BLI | The IS66WVE4M16EBLL-55BLI features a compact size of 6mm and is designed for surface mounting on circuit boards | ISSI, Integrated Silicon Solution Inc | 6.681 | BOM |
IS66WV51216BLL-55BLI | This product is a PSRAM Async Single Port with a capacity of 8M-bit | ISSI, Integrated Silicon Solution Inc | 7.570 | BOM |
IS66WV51216EBLL-55BLI | Top-performing 8Mb Pseudo SRAM designed with a 55ns access time and 512Kx16 organization for seamless operation | ISSI, Integrated Silicon Solution Inc | 7.233 | BOM |
IS66WV1M16EBLL-55BLI | This product is a synchronous SRAM chip that operates at a voltage of 3.3V with a capacity of 16 megabits and a configuration of 1 million by 16 bits | ISSI, Integrated Silicon Solution Inc | 6.879 | BOM |
IS66WVE4M16ALL-70BLI | The IS66WVE4M16ALL-70BLI is a 4M x 16 Pseudo SRAM with a capacity of 64Mb and a low power consumption design | ISSI, Integrated Silicon Solution Inc | 7.597 | BOM |
CY7C1051DV33-10BAXI | 10 nanosecond access time asynchronous SRAM chip with a 3.3V power supply | Cypress Semiconductor Corp | 8.822 | BOM |
CY62177EV30LL-55BAXI | Cutting-edge memory module offering superior performance with a voltage rating of 1.35V | Infineon Technologies Corporation | 3.648 | BOM |
CY62177EV30LL-55BAXIT | This 32M-bit memory module has a flexible configuration of 4M or 2M x 8/16-bit organization, making it suitable for a variety of applications | Infineon Technologies Corporation | 2.321 | BOM |
4MX0121VA13AVG8 | Switch / Multiplexer for DDR3 / DDR4 NVDIMM | Renesas | 2.509 | BOM |
4MX0121VA13AVG | Enhance data transfer speeds and reduce latency with this high-performance DDRDDRNVDIMM switch/multiplexer | Renesas | 3.845 | BOM |
71V416S12BEI | Asynchronous, high-speed SRAM module for reliable data storag | Renesas Technology Corp | 2.439 | BOM |
71V416S12BEG | This advanced memory solution features a compact 9x9mm footprint and supports data transfer rates up to 400MHz | Renesas Technology Corp | 2.249 | BOM |
71V416S12BE | Versatile, pin-compatible upgrade for existing syste | Renesas Technology Corp | 2.950 | BOM |
71V416S10BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3.474 | BOM |
71V416S10BE | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 2.034 | BOM |
71V416L15BEGI | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3.473 | BOM |
71V416L15BEG | Cost-effective and space-efficient RAM solution for a wide range of industries | Renesas Technology Corp | 3.488 | BOM |
71V416L15BE | x-bit synchronous SRAM memory compone | Renesas Technology Corp | 2.285 | BOM |
71V416L12BEGI8 | Fast access times, low latency, and high reliability make this SRAM an excellent choice" | Renesas Technology Corp | 2.340 | BOM |
71V416L12BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 2.211 | BOM |
71V416L12BE | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3.087 | BOM |
71V416L10BEG | High-performance memory solution for demanding applicatio | Renesas Technology Corp | 2.935 | BOM |
71V416L10BE | Asynchronous SRAM chip for high-speed data transfer and low power consumption | Renesas Technology Corp | 3.084 | BOM |
RMWV3216AGBG-5S2#AC0 | SRAM Memory IC 32Mbit Parallel 55 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2.946 | BOM |
RMWV3216AGBG-5S2#KC0 | Reliable and scalable, this 32MB SRAM module is an ideal solution for various embedded systems and industrial control applications | Renesas Technology Corp | 3.181 | BOM |
RMLV1616AGBG-5S2#KC0 | High-density, low-power parallel SRAM module for modern embedded system | Renesas Technology Corp | 3.491 | BOM |
RMLV0816BGBG-4S2#AC0 | SRAM Memory IC 8Mbit Parallel 45 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2.937 | BOM |
RMLV0816BGBG-4S2#KC0 | SRAM Memory IC 8Mbit Parallel 45 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2.675 | BOM |
RMLV0416EGBG-4S2#AC0 | Four-megabit capacity provides ample storage for data-intensive systems, utilizing a 48-pin TFBGA package | Renesas Technology Corp | 2.425 | BOM |
K6F2016U4E-EF70T | Expression : Scalable, reliable, and fast asynchronous SRAM IC suitable for high-speed data transfe | Samsung Semiconductor, Inc. | 6.045 | BOM |
K6F1616U6A-EF55T | The combination of advanced technology and compact design makes it ideal for space-constrained system | Samsung Semiconductor, Inc. | 5.902 | BOM |
IS61WV102416EDALL-10BLI-TR | High-density memory solution for space-constrained application | Issi, Integrated Silicon Solution Inc | 5.153 | BOM |
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