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48-TFBGA
(insgesamt 415 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
AT49BV1614AT-90CI | This parallel flash memory IC offers an impressive storage capacity of Mbit, making it suitable for demanding application | Microchip Technology | 7.655 | BOM |
AT49BV1614-11CI | 16Mbit storage capacity meets demanding data retention requirements | Microchip Technology | 5.313 | BOM |
AT49BV161-90CI | Advanced flash memory technology enables high-speed data transfer and secure data storag | Microchip Technology | 3.442 | BOM |
AT49BV161-70CI | High-density flash memory for embedded systems applications | Microchip Technology | 4.992 | BOM |
AT49BV163D-70CU | High-performance, low-power flash memory for embedded system | Microchip Technology | 5.285 | BOM |
AT49BV1614A-70CI | Mbit parallel flash memory IC, ideal for embedded design | Microchip Technology | 2.503 | BOM |
MX29LV320ETXBI-70G | Advanced parallel interface enables fast data transfer rates up to ns | Macronix International | 3.504 | BOM |
W29GL032CT7A | High-performance NOR flash solution with excellent data retention | Winbond Electronics | 3.166 | BOM |
IS61WV204816ALL-10BLI-TR | Compact and reliable memory solution for demanding application | Integrated Silicon Solution Inc | 2.906 | BOM |
RMLV0808BGBG-4S2#KC0 | Designed with a focus on reliability and ease of use, this IC is ideal for embedded systems and mor | Renesas Electronics Corporation | 7.049 | BOM |
RMLV0808BGBG-4S2#AC0 | bit of fast access memory in a compact -TFBGA packa | Renesas Electronics Corporation | 2.502 | BOM |
R1WV3216RBG-7SR#B0 | Advanced memory solution for high-performance applications | Renesas | 7.729 | BOM |
IDT71V416VL15BEG8 | IDT71V416VL15BEG8 is an asynchronous memory IC that offers high density and low power consumption for modern embedded systems | Renesas Electronics Corporation | 3.961 | BOM |
IDT71V416VL15BEG | With a parallel interface and asynchronous design | Renesas Electronics Corporation | 3.972 | BOM |
IDT71V416VL12BEI8 | Optimize your system's memory capacity and speed with this reliable 4Mbit chip | Renesas Electronics Corporation | 5.424 | BOM |
IDT71V416VL10BEGI8 | With its fast access time of just ns, this SRAM chip is ideal for demanding systems requiring rapid data transfer | Renesas Electronics Corporation | 3.737 | BOM |
IDT71V416VL10BEGI | High-speed, high-reliability asynchronous SRAM for parallel data transfer applications | Renesas Electronics Corporation | 6.709 | BOM |
W29GL032CB7A | TFBGA-48(6x8) NOR FLASH ROHS | Winbond Electronics | 5.221 | BOM |
SST39VF1601-70-4I-B3KE-T-MCH | Compact -TFBGA package for space-efficient desig | Microchip Technology | 5.872 | BOM |
SST38VF6401-90-5I-B3KE-NCJ | A high-density flash memory chip with 64Mbit capacity, ideal for embedded systems and industrial applications | Microchip Technology | 5.123 | BOM |
M29W800FB70ZA3SF TR | Robust and reliable non-volatile memory for secure data storage and booting processes | Micron Technology Inc. | 6.955 | BOM |
M29W640GB6AZA6F TR | Advanced NOR Flash Solution for High-Density Data Storag | Micron Technology Inc. | 7.907 | BOM |
IS66WVE2M16ALL-7010BLI | Low power, high speed Mbit parallel memory for diverse IoT device | Issi, Integrated Silicon Solution Inc | 2.879 | BOM |
M29W400FT5AZA6F TR | Industrial-grade non-volatile memory solution available | Micron Technology Inc. | 5.901 | BOM |
IS62WV20488EBLL-55BLI | 2M x 8 configuration providing a total of 2 megabytes of storage in a compact design | Integrated Silicon Solution Inc | 2.878 | BOM |
IS62WV20488EBLL-45BLI | With its high speed, low power, and small size, this SRAM chip is an ideal choice for demanding applications such as data centers and IoT device | Integrated Silicon Solution Inc | 5.991 | BOM |
CY7C1041CV33-10BAJXE | Low-power, high-speed memory solution for embedded systems | Infineon Technologies | 2.599 | BOM |
CY7C1011CV33-10BAJXET | Advanced memory solution for high-reliability systems requiring small footprint | Infineon Technologies | 3.007 | BOM |
R1LV1616RBG-7SR#B0 | High-performance memory for demanding applications | Renesas | 6.467 | BOM |
MX29LV160DBXGI-70G | High-performance memory solution for demanding applications | Macronix International | 2.055 | BOM |
M29W640GL70ZA6E | Advanced NOR Flash Memory Solution for High-Speed Applications | Micron Technology | 7.178 | BOM |
M28W640HCT70ZB6E | High-capacity storage solution for embedded systems and IoT device | Micron Technology | 5.720 | BOM |
IDT71V416VL15BE8 | High-speed parallel SRAM for fast data processing and transfer | Renesas Electronics Corporation | 6.399 | BOM |
IDT71V416VL12BE8 | Parallel-access, 4Mbit SRAM IC offering fast read/write speeds of 12 ns for demanding systems | Renesas Electronics Corporation | 6.033 | BOM |
IDT71V416S15BE | This advanced bit SRAM chip features parallel architecture and ns cycle time, making it an excellent choice for high-speed data transfe | Renesas Electronics Corporation | 2.512 | BOM |
IDT71V416S12BEI | Featuring a compact 48-CABGA package, this SRAM IC provides a reliable and cost-effective memory solution for industrial control systems | Renesas Electronics Corporation | 3.275 | BOM |
IDT71V416S12BEG | Enhance your system's performance with this reliable and fast asynchronous SRAM IC featuring a large 4Mbit capacity | Renesas Electronics Corporation | 7.638 | BOM |
IDT71V416S12BE | The IDT71V416S12BE's asynchronous operation allows for flexibility in system design | Renesas Electronics Corporation | 6.405 | BOM |
IDT71V416S10BEG | This 4Mbit asynchronous SRAM memory device provides reliable storage solution for industrial control systems | Renesas Electronics Corporation | 6.560 | BOM |
IDT71V416S10BE | Compact bit asynchronous memory solution suitable for high-speed data transfe | Renesas Electronics Corporation | 3.607 | BOM |
IDT71V416L15BEGI | This SRAM IC offers a reliable and efficient means of storing data, ensuring seamless communication between devices | Renesas Electronics Corporation | 2.866 | BOM |
IDT71V416L12BEI | This Asynchronous Memory IC is an essential component for building reliable and fast systems requiring high-speed data transfer | Renesas Electronics Corporation | 7.660 | BOM |
IDT71V416L12BEGI | A high-performance, low-power SRAM solution ideal for a wide range of applications requiring fast access and reliable data storag | Renesas Electronics Corporation | 4.978 | BOM |
IDT71V416L12BE | Reliable and efficient memory component with low power consumption | Renesas Electronics Corporation | 4.891 | BOM |
IDT71V416L10BEG | High-density asynchronous memory for parallel data transfer | Renesas Electronics Corporation | 4.914 | BOM |
IDT71V416L10BE | Note: The above expressions are in the same style as the product description | Renesas Electronics Corporation | 2.459 | BOM |
CYK512K16SCAU-70BAXI | Designed for high-speed applications, this IC provides superior data integrit | Infineon Technologies | 2.486 | BOM |
CY7C1041CV33-10BAC | Designed with advanced architecture, this 256K x 16 SRAM module provides fast access times and low power consumption for critical system integration | Cypress Semiconductor Corp | 7.403 | BOM |
CY7C1021V33L-15BACT | Ultra-fast SRAM solution for demanding systems: Kx bits, PBGA packag | Cypress Semiconductor Corp | 3.626 | BOM |
CY7C1021V33L-15BAC | High-density SRAM for efficient data storage and processin | Cypress Semiconductor Corp | 7.820 | BOM |
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