Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Für weitere Informationen werfen Sie bitte einen Blick auf unsere Datenschutzrichtlinie.
SOT-523
(insgesamt 206 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| NTE4153NT1G | Robust V operation and low on-resistance for efficient switchin | ONSEMI | 3.938 | BOM |
| PBSS2515E | This product, PBSS2515E, is a small signal NPN Bipolar Transistor capable of handling up to 0.5 A at 15 V with an HFE of 90 | NXP | 10.074 | BOM |
| BAV99T-7-F | 85V Diode Switching 0.155A | Diodes Incorporated | 9.458 | BOM |
| SP0502BXTG | ESD protection devices with ultra-low capacitance of 1 picofarad and high 15kV voltage tolerance | Littelfuse Inc. | 7.185 | BOM |
| DTC144EE | Streamline your electronics projects with these easy-to-use pre-biased bipolar transistors | Onsemi | 9.458 | BOM |
| DTC114YE | SOT-523 NPN 0.15W 0.1A Transist | ROHM Semiconductor | 9.458 | BOM |
| DTC124XE | Pre-biased bipolar transistor components | WEITRON TECHNOLOGY CO LTD | 6.658 | BOM |
| NE68119 | NE68119: Transistor for RF Small Signal Applications, Silicon NPN Technology, L Band Frequency | Nec Compound Semiconductor Devices Ltd | 8.906 | BOM |
| NE85619-T1-A | High-performance NPN transistor for ultra-high frequency us | CEL | 7.087 | BOM |
| NE68819 | 1A I(C), S Band, Silicon, NPN, PLASTIC, SC-90 | CEL | 8.643 | BOM |
| NE68519 | RF Transistors with Bipolar Technology | CEL | 5.572 | BOM |
| NE85619 | High Frequency NPN RF Bipolar Transistors NE85619 | CEL | 6.813 | BOM |
| MMBT3906T-7-F | PNP Transistor for General Purpose Applications with 40V Voltage Rating | Diodes Incorporated | 9.778 | BOM |
| MMBT2907AT-7-F | Transistor with PNP polarity, part number MMBT2907AT-7-F, features a maximum voltage of 60V and a maximum current of 0.6A | Diodes Incorporated | 5.001 | BOM |
| MMBT2222AT-7-F | NPN Small Signal Transistor SOT-523, RL | Diodes Incorporated | 8.799 | BOM |
| DTC114TE | DTC114TE comes in an SOT-523 (SC-75) package and is compliant with ROHS regulations | ROCHESTER ELECTRONICS LLC | 7.187 | BOM |
| DMN313DLT-7 | N-Channel MOSFET with a 30V voltage rating and a 0.27A current rating in a SOT-523 package | Diodes Incorporated | 6.460 | BOM |
| DMN5L06TK-7 | N-Channel Silicon MOSFET with 0.28A Drain Current and 50V Voltage Rating in a Green Plastic Package | Diodes Incorporated | 5.618 | BOM |
| DMN601TK-7 | Efficiently regulates voltage and current flo | Diodes Incorporated | 8.494 | BOM |
| DMN26D0UT-7 | Tape and Reel Packaged N-channel MOSFET, 20V, 0.23A, SOT-523 | Diodes Incorporated | 9.134 | BOM |
| DMN26D0UT | Elevate your circuitry with the cutting-edge DMN26D0UT N-Channel Mosfet | DIODES | 8.196 | BOM |
| D5V0L2B3T-7 | Two channels for enhanced protection with a 6A current rating | Diodes Incorporated | 6.101 | BOM |
| BAV170T-7-F | Compact surface mount diode for high-reliability application | Diodes Incorporated | 8.427 | BOM |
| BC857CT | Compact SOT-package ideal for space-constrained design | Yangjie Technology | 6.559 | BOM |
| BAS40-04T-7-F | Tape and Reel Schottky Diode | DIODES INC | 8.420 | BOM |
| BAV199T | Switching Diode BAV199T Description" | DIODES | 8.891 | BOM |
| BAV199T-7-F | Suitable for handling moderate power levels | Diodes Incorporated | 7.200 | BOM |
| BC847AT | Delve into the functionality of BC847AT, a pivotal component for amplification and switching purposes | Diodes Incorporated | 5.972 | BOM |
| BC847BT-7-F | Transistor featuring NPN technology, with 45V voltage and 0.1A current | Diodes Incorporated | 6.300 | BOM |
| 2SC5006-T1-A | RF Bipolar Transistors for NPN Silicon Amplification | RENESAS | 8.432 | BOM |
| BC847CT-7-F | NPN Bipolar Transistor, 45V | Diodes Incorporated | 8.731 | BOM |
| DTA114EE | PNP Bipolar Digital Transistor (BRT) | onsemi | 8.596 | BOM |
| DMN55D0UT-7 | N-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMN55D0UT-7 | Diodes Incorporated | 6.036 | BOM |
| DMG1013T-7 | P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGS | Diodes Incorporated | 9.289 | BOM |
| BAS116-7-F | Rectifier Diode, 1 Phase, 1 Element, 0.215A, 85V V(RRM), Silicon | DIODES INC | 6.697 | BOM |
| DTA143ZE | Bipolar Transistors - Pre-Biased | ROHM Semiconductor | 9.458 | BOM |
| DTA123JE | Bipolar Transistors - Pre-Biased | ROHM Semiconductor | 9.458 | BOM |
| DTA124EE | PNP Bipolar Digital Transistor (BRT) | ROHM Semiconductor | 9.458 | BOM |
| BAS116T | Diodes - General Purpose, Power, Switching | Diodes Incorporated | 9.458 | BOM |
| BSS138BKT-TP | Surface Mount SOT-523 N-Channel Transistor with 50 V Voltage Rating | Micro Commercial Components (MCC) | 7.210 | BOM |
| MMBT2222AT-TP | NPN General Purpose Bipolar Junction Transistor, with a 40V voltage rating, 0 | Micro Commercial Components (MCC) | 7.279 | BOM |
| DDTA114EE-7-F | Digital Transistors with a Power Rating of 150 Milliwatts and a Resistance of 10 Kilohms | Diodes Incorporated | 7.055 | BOM |
| SI3139KE-TP | SI3139KE-TP is a ROHS-compliant MOSFET suitable for various electronic applications | Micro Commercial Components (MCC) | 8.129 | BOM |
| 2DA1774S-7-F | Transistor PNP Bipolar Junction General Purpose 50V 0.15A 150mW SOT-523 | Diodes Incorporated | 2.280 | BOM |
| BAV99TQ-13-F | SOT-523 package for easy installation | Diodes Incorporated | 5.576 | BOM |
| DTC114TE-TP | Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R | Micro Commercial Components (MCC) | 5.645 | BOM |
| DTC114YE-TP | Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R | Micro Commercial Components (MCC) | 7.463 | BOM |
| DMP22D6UT-7 | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | Diodes Incorporated | 6.481 | BOM |
| MMBT2222AT-7 | Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SOT-523 | Diodes Incorporated | 5.613 | BOM |
| MMBT2907AT-TP | Trans GP BJT PNP 60V 0.6A 150mW 3-Pin SOT-523 T/R | Micro Commercial Components (MCC) | 9.252 | BOM |
Anderes Paket