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TO-204AE
(insgesamt 16 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| JANTX2N6766 | Power MOSFET with N-channel configuration, capable of handling up to 200V and 30A current, housed in a TO-3 package | Microsemi Corporation | 6.617 | BOM |
| IRF150 | Robust and Reliable for High-Temperature Applicatio | Infineon | 9.663 | BOM |
| IRF140 | 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF140 with Hermetic PackagingBenefits | TT Electronics | 9.323 | BOM |
| MJ11028 | Silicon NPN Darlington Power Transistor | NTE Electronics, Inc | 5.692 | BOM |
| MJ11033G | Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3) | Fairchild Semiconductor | 6.089 | BOM |
| MJ11028G | Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3) | Sanyo | 9.744 | BOM |
| IRF460 | Advanced power electronics component for high-voltage DC-DC converters, motor drives, and power supplies | Infineon | 2.687 | BOM |
| IRF250 | Robust package design features a 200V rated voltage and 30A current handling | Infineon | 6.405 | BOM |
| IRF240 | Power electronics solution for motor drives, lighting systems, and power supplies | Infineon | 6.435 | BOM |
| JANTX2N6764 | 38 A 100 V 0.065 ohm N-CHANNEL Si POWER MOSFET TO-204 | Microsemi Corporation | 5.620 | BOM |
| JANTX2N6770 | N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 | Microsemi Corporation | 5.886 | BOM |
| JANTXV2N5686 | Advanced TO-3 package design for reliable operation | Microchip Technology | 7.966 | BOM |
| JANTXV2N6764 | Compact TO-E package allows for efficient PCB layout and minimal space usag | Infineon | 6.021 | BOM |
| JANTX2N5686 | V, A, and of robust power handlin | Microchip Technology | 6.281 | BOM |
| GE10020 | Bipolar (BJT) Transistor NPN - Darlington 300 V 60 A 250 W Through Hole TO-204AE | Harris Corporation | 9.579 | BOM |
| IXGM20N60 | IGBT 600 V 40 A 150 W Through Hole TO-204AE | IXYS | 5.156 | BOM |
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