Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Für weitere Informationen werfen Sie bitte einen Blick auf unsere Datenschutzrichtlinie.
TO-263-3
(insgesamt 363 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| SUB70N06-14 | TO-263AB Package | Vishay | 9.458 | BOM |
| IXTA10P50P | High-power transistor ideal for demanding industrial applications requiring high voltage and current rating | IXYS | 6.291 | BOM |
| STB60NF06T4 | N-Channel MOSFET with 60V voltage rating, 0.014Ohm resistance, and 60A current capability | STMicroelectronics | 9.458 | BOM |
| MBRB60H100CTT4G | Diode Schottky 100V 30A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel | onsemi | 9.458 | BOM |
| MC7805CD2TR4G | Linear Voltage Regulators 5V 1A Positive | onsemi | 9.458 | BOM |
| NCP565D2T12R4G | Linear Voltage Regulator IC Positive Fixed 1 Output 1.5A D2PAK-3 | ON Semiconductor, LLC | 2.518 | BOM |
| IPB072N15N3G | 150V N Channel MOSFET with 100A current rating | Infineon Technologies Corporation | 2.421 | BOM |
| SUM110P08-11L-E3 | High-power electronic switch for demanding applicatio | Vishay | 9.458 | BOM |
| SUM45N25-58-E3 | TrenchFET Unipolar Transistor | Vishay | 9.458 | BOM |
| IPB048N15N5LFATMA1 | Product Name: MOSFET TRENCH >=100V | INFINEON TECHNOLOGIES AG | 7.359 | BOM |
| IPB60R040C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.194 | BOM |
| MTB23P06V | P-CHANNEL TRANSISTOR 60V 23A D2PAK | Onsemi | 9.458 | BOM |
| MIC29300-5.0WU | Linear regulators capable of delivering 3.0A at a constant voltage | Microchip | 3.126 | BOM |
| TCF10B60 | Robust A, device for power conversion syste | KYOCERA AVX | 9.458 | BOM |
| STB19NB20 | ER Transistor STB1 MOSFET | stmicroelectronics | 5.945 | BOM |
| MTB75N05HD | MTB75N05HD: Surface-mount technology N-channel MOSFET capable of handling 75A at 50V | onsemi | 9.458 | BOM |
| DPG60IM300PC | Diode 300 V 60A Surface Mount TO-263AA | IXYS | 6.018 | BOM |
| IXTA94N20X4 | N-Channel 200 V 94A (Tc) 360W (Tc) Surface Mount TO-263 (D2PAK) | IXYS | 9.458 | BOM |
| 64-2092PBF | 5V N-Channel Surface Mount D2PAK 75A (Tc) 170W (Tc) | Infineon | 5.898 | BOM |
| IXTA1N200P3HV | TO-263AA package type meeting ROHS guidelines | IXYS | 9.458 | BOM |
| STB25NM50N | N-CHANNEL Si POWER MOSFET 22A 500V 0.14ohm D2PAK-3 | Stmicroelectronics | 6.607 | BOM |
| SUB75P05-08 | P-Channel MOSFET with 55V voltage rating and 75A current | Vishay | 9.458 | BOM |
| SKB10N60A | High-Speed IGBT Transistor with NPT Technology, 600V Voltage, and 10A Current | Infineon | 9.698 | BOM |
| SBRB2545CTT4G | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon | onsemi | 9.458 | BOM |
| NTB52N10 | MOSFET 100V 52A N-Channel | onsemi | 7.347 | BOM |
| IXFA6N120P | MOSFET with reduced RDS and high polarization, rated at 1200V and 6A | IXYS | 9.477 | BOM |
| FCB20N60 | SUPERFET® N-Channel Power MOSFET featuring Easy Drive technology, 600 volts, 20 amps, and 190 milliohm resistance in D2PAK form factor | onsemi | 8.831 | BOM |
| FQB1P50 | The FQB1P50 is a P-Channel Power MOSFET featuring QFET technology, rated for -500V and -1 | Onsemi | 9.254 | BOM |
| FQB12P20 | D2PAK-packaged Power MOSFET with P-Channel design, utilizing QFET technology for efficient operation at -200 V voltage, -11 | onsemi | 9.432 | BOM |
| IXBA16N170AHV | 6A 1.7kV TO-263 IGBTs with 150W | IXYS | 9.458 | BOM |
| IRG4BC30S-S | D2-Pak packaged IRG4BC30S-S is a 600V DC-1 kHz (Standard) Discrete IGBT | Infineon Technologies | 6.139 | BOM |
| IRG4BC20KD-S | Low Power Dissipation of 60mW for Efficient Performance | Infineon Technologies | 8.643 | BOM |
| SKB15N60 | SKB15N60 is packaged in quantities of 1000 units for manufacturing purposes | Infineon | 9.832 | BOM |
| FQB34N20L | MOSFET QF 200V with 75MOHM in D2PAK package | onsemi | 7.909 | BOM |
| FQB27P06 | FQB27P06 is a P-Channel Power MOSFET | onsemi | 6.667 | BOM |
| FDB44N25 | D2PAK MOSFET UF 250V 69MOHM | onsemi | 6.672 | BOM |
| HUF76639S3S | '51A, 100V N-Channel Power MOSFET in TO-263AB Package' | onsemi | 9.458 | BOM |
| IXTA52P10P | TO-263AA MOSFET, IXTA52P10P, adhering to ROHS standards | IXYS | 5.731 | BOM |
| PMV30UN2R | N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB | Nexperia | 9.458 | BOM |
| NRVBB60H100CTT4G | Diode Array 1 Pair Common Cathode 100 V 30A Surface Mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | onsemi | 9.458 | BOM |
| IXFA56N30X3 | High-power MOSFET | IXYS | 9.458 | BOM |
| 2SK4065-DL-1E | N-Channel 75 V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2 | onsemi | 9.458 | BOM |
| SIHB30N60E-GE3 | E Series Power MOSFET | Vishay | 9.458 | BOM |
| IRFBC40S | IRFBC40S MOSFET, recommended alternative: 844-IRFBC40SPBF | Vishay | 9.458 | BOM |
| IRFBC20SPBF | Product IRFBC20SPBF: A power MOSFET featuring N-channel HEXFET technology, capable of handling voltages up to 600V, suitable for D2-PA use | Vishay | 9.458 | BOM |
| IRF9640STRLPBF | High-voltage P-Channel MOSFET featuring HEXFET design for efficient performance | Vishay | 9.918 | BOM |
| IRF840AS | Silicon N-Channel MOSFET capable of handling 8 Amperes at 500 Volts | Vishay | 7.504 | BOM |
| IRF644S | N-Channel 250 V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK) | Vishay | 9.609 | BOM |
| IRF510SPBF | N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D2PAK) | Vishay Siliconix | 5.149 | BOM |
| SUM70030E-GE3 | Single N-Channel 10 V 2.88 mOhm Surface Mount TrenchFET® Power Mosfet - TO-263 | Vishay | 9.458 | BOM |
Anderes Paket