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TSOP-44
(insgesamt 237 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
CY7C1041DV33-10ZSXI | Memory type: 256K X 16 Standard SRAM | Infineon | 9.458 | BOM |
CY7C1041D-10ZSXI | This product is a 4M-bit asynchronous SRAM chip designed to operate at a voltage of 5V, with a capacity of 256K x 16 bits | Infineon | 9.458 | BOM |
K6R4016V1D-TC10 | This product is a 256KX16 static RAM module operating on a CMOS platform, ensuring fast data processing with a 10ns response time | Olimex Ltd. | 6.864 | BOM |
IS62WV51216BLL-55TLI | 55ns 44-Pin TSOP-II SRAM Chip Async Single 3.3V 8M-bit 512K x 16 | Issi | 6.470 | BOM |
K6R4016V1D-UI10 | High-speed CMOS technology | Samsung Electro-Mechanics | 6.154 | BOM |
RMLV0416EGSB-4S2#AA1 | SRAM with 10.2mm TSOPII-44 form factor, RoHS certified | Renesas | 3.932 | BOM |
IS61C25616AL-10TLI | This product is an SRAM (Static Random Access Memory) chip with a capacity of 4M (256Kx16) | ISSI | 9.458 | BOM |
IS61LV51216-10T | The IS61LV51216-10T is a high-speed static RAM module offering fast access times, ideal for applications requiring quick data storage and retrieval." | ISSI | 9.458 | BOM |
CY7C1049DV33-10ZSXI | Ultra-fast and reliable memory solution for systems requiring high bandwidth and densit | Infineon | 9.458 | BOM |
R1LV0816ASB-5SI#B0 | 512KX16 CMOS Standard SRAM with 55ns speed, PDSO44 | Renesas Technology Corp | 2.591 | BOM |
CY62157EV30LL-45ZSXI | Established French electronic distributor | Infineon Technologies Corporation | 3.096 | BOM |
CY7C1049G30-10ZSXI | CY7C1049G30-10ZSXI - 10 ns SMT SRAM | Infineon Technologies Corporation | 3.768 | BOM |
CY62147EV30LL-45ZSXI | Fast and reliable data storage for high-speed devices, offering ns access tim | Infineon Technologies Corporation | 2.579 | BOM |
CY62146EV30LL-45ZSXI | Low Power SRAM with 256Kx16 Configuration | Infineon Technologies Corporation | 2.993 | BOM |
CY7C1041GN30-10ZSXI | Standard SRAM with 256KX16 configuration, operating at 10ns speed, utilizing CMOS technology, packaged in PDSO44 and TSOP2-44 formats | Infineon Technologies Corporation | 3.354 | BOM |
CY7C1049DV33-10ZSXIT | Standard SRAM, 512KX8, 10ns, CMOS, PDSO44 | Infineon | 9.458 | BOM |
IS61WV10248BLL-10TLI | SRAM 8Mb 1Mb x 8 10ns Async SRAM 3.3v | ISSI | 9.458 | BOM |
R1RW0416DSB-2PR | Renesas Electronics SRAM, R1RW0416DSB-2PR- 4Mbit | Renesas Technology Corp | 3.748 | BOM |
IS61LV51216-12T | SRAM | ISSI | 9.458 | BOM |
71V016SA12PHG | SRAM IC with 1MBIT capacity in a 44TSOP II package | Renesas | 2.126 | BOM |
CY7C1021DV33-10ZSXA | TSOP-44 SRAM ROHS CY7C1021DV33-10ZSXA | Infineon | 3.565 | BOM |
IS41LV16100A-50TI | DRAM | ISSI | 8.518 | BOM |
IS61LV51216-10TI | Operates at 10 nanoseconds latency on 3.3 volts | issi | 8.774 | BOM |
IS41LV16100C-50TLI | Async EDO DRAM with 1 million x 16 configuration | Issi | 8.760 | BOM |
IS61LV6416-10TLI | IS61LV6416-10TLI is a TSOPII-44-10.2mm SRAM ROHS product | Issi | 6.021 | BOM |
CY7C1041CV33-10ZSXA | Fast Shipping Available for CY7C10... (49 characters) | Infineon | 9.458 | BOM |
MR0A16ACYS35 | High-performance memory solution for data-intensive applications, featuring a K x -bit architecture and ns access tim | Everspin Technologies | 9.097 | BOM |
FM21L16-60-TG | High performance memory | Infineon | 8.395 | BOM |
MR0A08BYS35 | Versatile bit parallel interface MRAM chip for industrial and commercial us | Everspin Technologies | 5.301 | BOM |
AS6C8016-55ZIN | AS6C8016-55ZIN: 512Kx16 Standard SRAM, 55ns, CMOS, Green, TSOP2-44, PDSO44, 0.400 Inch | Alliance | 7.508 | BOM |
71V416L10PHG | Compact and reliable, this static RAM ensures efficient data storag | Renesas Technology Corp | 2.611 | BOM |
CY7C1041DV33-10ZSXIT | Ready to Ship, Order No | Infineon | 9.458 | BOM |
IS61LV51216-8TL | 8M-bit Memory Module | ISSI | 7.243 | BOM |
IS41LV16100B-50TLI | Streamline your computing experience with this powerful and efficient EDO DRAM solutio | ISSI | 5.607 | BOM |
IS41LV16100B-50TL | The product utilizes CMOS technology and is housed in a PDSO44 package measuring 0.400 inches | ISSI | 9.458 | BOM |
IS41C16100C-50TLI | High-speed data transfer capabilities, ideal for demanding application | ISSI, Integrated Silicon Solution Inc | 9.074 | BOM |
IS61LV6416-12T | IS61LV6416-12T description: SRAM Chip Async Single 3.3V 1M-bit 64K x 16 12ns 44-Pin TSOP-II | ISSI | 9.458 | BOM |
CY7C1041CV33-8ZSXI | 44-TSOP II Package | CYPRESS | 5.173 | BOM |
RMLV0416EGSB-4S2#AA0 | Compact 44-pin TSOP-II tray package for easy integration into complex electronic systems, minimizing board real estate requirements | Renesas Technology Corp | 3.505 | BOM |
CY7C1051DV33-10ZSXI | High-speed 8 megabit SRAM with 512Kx16 configuration | Infineon Technologies Corporation | 3.107 | BOM |
CY7C1051DV33-10ZSXIT | 10ns 3.3V SRAM memory module with 8 million bits and 512Kx16 configuration | Infineon Technologies Corporation | 2.812 | BOM |
CY62158EV30LL-45ZSXI | CY62158EV30LL-45ZSXI is a TSOP44(II) package SRAM memory with a capacity of 1Mx8 and a speed of 45ns, designed for low power applications | Infineon Technologies Corporation | 3.412 | BOM |
CY7C1041G-10ZSXI | TSOPII(44) Package Type | Infineon Technologies Corporation | 2.475 | BOM |
CY7C1021D-10ZSXI | 2 Megabyte Fast Asynchronous Static Random Access Memory | Infineon Technologies Corporation | 2.356 | BOM |
R1LV0808ASB-5SI | RENESAS - R1LV0808ASB-5SI - SRAM, 8MBIT, 3V, 55NS, 44TSOP | Renesas Technology Corp | 3.681 | BOM |
IS66WV51216BLL | SRAM 8Mb, Ultra Low Power,Async,512K x 16 | ISSI | 9.458 | BOM |
R1RP0416DSB-2PR | SRAM Chip Async Single 5V 4M-bit 256K x 16 12ns 44-Pin TSOP-II | Renesas Technology Corp | 3.897 | BOM |
IS62C25616EL-45TLI | Compact yet powerful ROHS-compliant module perfect for space-constrained designs, ensuring seamless integration | Issi | 7.453 | BOM |
IS66WV51216EBLL-70TLI | Pseudo Static RAM IS66WV51216EBLL-70TLI features 512KX16 capacity | Issi | 3.897 | BOM |
IS61WV10248EDBLL-10TLI | The IS61WV10248EDBLL-10TLI has a fast access time of 10ns, ensuring quick data retrieval | Issi | 5.434 | BOM |
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