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TSOP-54
(insgesamt 185 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
IS42S16400F-7TL | Package Size: PDSO54 | ISSI | 9.458 | BOM |
IS42S16800D-7TLI | High-speed DRAM chip with a capacity of 128 million bytes | ISSI | 7.180 | BOM |
IS42S16400A-7T | Ideal for high-performance applications | issi | 6.649 | BOM |
IS42S16400B-7TL | The IS42S16400B-7TL is a high-speed synchronous DRAM chip designed for various applications requiring fast data access | issi | 8.724 | BOM |
IS42S16400D-7TL | 64 Megabyte 4 Meg x 16-bit Chipset | ISSI | 9.458 | BOM |
IC42S16400F-7TL | 0.400 inch Synchronous DRAM with 4MX16 capacity and 5.4ns speed | INTEGRATED SILICON SOLUTION INC | 6.870 | BOM |
AS4C4M16S-7TCN | Advanced memory technology enables fast data transfer and processin | Alliance Memory | 9.458 | BOM |
AS4C4M16S-6TIN | Fast and efficient memory device with low power consumption featur | Alliance Memory | 9.458 | BOM |
MT48LC16M16A2TG-75 IT:D | 3.3V SDR SDRAM - 256Mbit 16Mx16 DRAM Chip | micron technology | 9.603 | BOM |
CY7C1069AV33-10ZXI | SRAM Chip with 16M-bit capacity | Infineon Technologies Corporation | 3.281 | BOM |
W9825G6KH-6 | DRAM Chip SDRAM 256Mbit 16Mx16 3.3V Automotive 54-Pin TSOP-II | winbond | 7.191 | BOM |
EM63A165TS-6G | DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II T/R | E-Switch | 7.241 | BOM |
MT48LC32M16A2TG-75 C | Featuring a 32Mx16 configuration, this chip operates at a voltage of 3.3V for efficient power consumption." | Micron Technology | 7.973 | BOM |
AS4C8M16SA-6TANTR | b SDRAM Chip Designed for Fast Performance and Energy Efficienc | Alliance Memory | 4.008 | BOM |
W9864G6KH-5 TR | Features: Synchronous operation, high density memory, low power consumption, compact form factor | Winbond | 3.025 | BOM |
IS45S16320F-7TLA2 | RoHS-compliant 54 pin TSOP II package for easy installation | Issi | 2.650 | BOM |
IS45S16800F-6TLA1 | 128Mbit 8Mx16 3.3V Automotive AEC-Q100 DRAM Chip SDRAM 54-Pin TSOP-II | Issi | 2.338 | BOM |
IS42S16800B-6TL | 8 megabytes of storage capacity with a clock speed of 5.4 nanoseconds | Issi | 2.205 | BOM |
EM638165TS-6G | Packed with 4 megabytes of Synchronous DRAM in a 4x16 configuration, this high-speed memory module operates at 5 | Etron Technology, Inc. | 2.755 | BOM |
A3V28S40JTP-60 | 3.3V 166MHz Synchronous DRAM | Zentel Japan | 2.336 | BOM |
MT48LC4M16A2P-75G | The chip operates at a voltage of 3.3V and comes in a 54-pin TSOP-II package | Micron Technology | 4.532 | BOM |
MT48LC32M8A2P-75D | 3.3V operating voltage for efficient power consumption | Micron Technology | 5.197 | BOM |
MT48LC16M16A2TG-75IT:D | 3.3V SDR SDRAM - 256Mbit 16Mx16 DRAM Chip | Micron Technology | 6.158 | BOM |
MT48LC16M16A2P-75ITD | CMOS technology-based PDSO54 package | Micron | 7.757 | BOM |
MT48LC16M16A2P-75 D | Ultra-low latency memory solution for data-intensive systems | Micron Technology | 3.913 | BOM |
IS42S16400J-7TLI | With its x configuration, this ISS-LI chip excels in speed and efficiency | Issi | 7.961 | BOM |
W9864G6KH-6 | Features a TSOP-II package with 54 pins for easy integration into PCBs | Winbond | 7.263 | BOM |
W9812G6KH-6 | 128Mbit DRAM Chip SDRAM 8Mx16 3.3V 54-Pin TSOP-II | Winbond | 4.279 | BOM |
MR4A16BYS35R | Ideal for applications requiring large memory capacities and spee | Everspin Technologies | 7.915 | BOM |
IM2516SDBATG-6I | Reliable memory solution for extreme temperatures (-°C to +°C | Intelligent Memory | 6.228 | BOM |
AS3001316-035NX0ITBY | Robust and reliable non-volatile memory solution for industrial use | Avalanche Technology | 2.858 | BOM |
AS3004316-035NX0ITBY | Cutting-edge semiconductor component for improved system performance and scalabilit | Avalanche Technology | 2.854 | BOM |
AS3008316-035NX0ITBY | Compact TSOP package for efficient board usa | Avalanche Technology | 6.549 | BOM |
AS4C64M8SD-7TCN | High-quality memory module for SDRAM applications, ensuring reliable data transfer and efficient processin | Alliance Memory | 7.304 | BOM |
IS45S16320F-7CTLA1-TR | Ruggedized package with excellent thermal performance | Issi | 5.480 | BOM |
IS45S16320F-6TLA1-TR | Satisfies RoHS requirements for environmental sustainabilit | Issi | 4.409 | BOM |
IS42S16320F-6TLI-TR | Versatile SDRAM chip for high-speed processing requirements | Issi | 3.940 | BOM |
IS61WV20488FBLL-10T2LI | Fast and reliable asynchronous memory for your need | Issi | 5.172 | BOM |
IS45S16160J-7CTLA2-TR | 256M-bit SDRAM module offers high memory density, reliable data storage, and fast access speeds for diverse computing environments | Issi | 5.863 | BOM |
IS42S83200J-7TLI-TR | Low-voltage, high-performance DRAM solution for PCs and laptops | Issi | 6.737 | BOM |
AS4C4M16SA-6TANTR | Reliable and efficient storage solution for automotive electroni | Alliance Memory | 5.506 | BOM |
AS4C8M16SA-6TCNTR | Economical and efficient memory solution for large-scale computing and data analysis | Alliance Memory | 6.603 | BOM |
AS4C4M16SA-5TCN | High-Capacity SDRAM Chip for Efficient Computin | Alliance Memory | 4.593 | BOM |
IS43R16160F-5TL-TR | Reliable and fast memory solution for demanding application | Issi | 5.797 | BOM |
IS43R16160F-6TL-TR | Durable and efficient storage solution for heavy-duty industrial use case | Issi | 7.825 | BOM |
W9825G6KH-6I TR | Advanced Memory Module for Enhanced Performan | Winbond | 6.944 | BOM |
W9825G6KH-6 TR | Fast and durable 256MB SDR SDRAM with 16-bit width and clock speed of 166MHz | Winbond | 5.419 | BOM |
W9812G6KH-6I TR | Enhanced data storage and processing capabilities for optimal results | Winbond | 3.901 | BOM |
W9864G6KH-6I TR | Advanced SDR SDRAM technology for fast data transf | Winbond | 4.863 | BOM |
W9812G6KH-6 TR | bit capacity and fast access times for reliable performanc | Winbond | 2.417 | BOM |
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