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TSOP-54
(insgesamt 185 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
IS42S16160J-7TLI-TR | 16Mx16 SDRAM chip for reliable data storage and retrieval | Issi | 7.414 | BOM |
AS4C8M16SA-7TCNTR | High-performance memory solution for demanding application | Alliance Memory | 6.198 | BOM |
AS4C8M16SA-6TINTR | Industrial-grade memory solution for reliable performanc | Alliance Memory | 7.274 | BOM |
AS4C8M16SA-6TAN | 128Mbit 8Mx16 3.3V Automotive DRAM Chip SDRAM 54-Pin | Alliance Memory | 3.078 | BOM |
AS4C4M16SA-6TCNTR | 64Mb SDRAM chip optimized for industrial and commercial use cases | Alliance Memory | 3.933 | BOM |
AS4C4M16SA-6TCN | Advanced semiconductor technology for enhanced data storag | Alliance Memory | 3.994 | BOM |
AS4C4M16SA-6TAN | Enhanced performance and reliability through advanced memory technolog | Alliance Memory | 2.362 | BOM |
AS4C32M8SA-7TCN | Advanced memory solution for servers, workstations, and other high-end systems requiring fast data transfer | Alliance Memory | 2.324 | BOM |
AS4C32M8SA-6TIN | 3.3V supply voltage and 54-pin TSOP-II package for easy integration | Alliance Memory | 3.554 | BOM |
AS4C16M16SA-6TINTR | High-performance SDR DRAM for demanding applications | Alliance Memory | 5.500 | BOM |
AS4C16M16SA-6TCNTR | Fast and reliable, this parallel memory chip boosts system performance | Alliance Memory | 5.240 | BOM |
AS4C16M16SA-6TAN | High-density, low-latency memory solution for high-performance computing and data storage applications | Alliance Memory | 2.519 | BOM |
A3V56S40GTP-60I | High-performance memory solution for demanding applicatio | Zentel Japan | 4.574 | BOM |
CY14B104NA-ZSP45XIT | Compact and reliable memory solution for embedded systems | Infineon Technologies Corporation | 3.616 | BOM |
AS4C16M16SA-7TCNTR | SDR 256M 16M x 16 3.3V 54pin TSOP II 143Mhz Commerical Temp(.63) Tape and Reel | Alliance Memory | 4.093 | BOM |
AS4C64M8SD-7TCN | DRAM SDRAM 512Mb (64Mx8), 3.3V, 54p TSOP II, 133MHz, Commercial Temp, Rev.D | Alliance Memory | 7.747 | BOM |
IS45S16160J-6CTLA1-TR | 256M SDRAM for automotive applications | Issi | 6.785 | BOM |
IS42S83200J-6TLI-TR | 256Mbit capacity | Issi | 5.299 | BOM |
IS45S16160J-6CTLA1 | Synchronous DRAM | Issi | 4.243 | BOM |
IS42S83200J-7TL | 32Mx8 configuration | Issi | 4.143 | BOM |
IS45S16160J-7TLA2 | SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TSOP II | Issi | 5.208 | BOM |
IS42S16800F-5TLI | 2Mx16bitx4 configuration | Issi | 4.367 | BOM |
MT48LC32M16A2TG-75 IT:C TR | DRAM 512M 3.3V 133MHz 32M x 16 IND TEMP | Alliance Memory | 2.847 | BOM |
IS45S16320D-7TLA1 | DRAM integrated circuit featuring 512 million memory cells, arranged in a 32 megabyte by 16-bit configuration, supporting 3 | Issi | 4.275 | BOM |
IS45S16320D-7TLA1 | DRAM integrated circuit featuring 512 million memory cells, arranged in a 32 megabyte by 16-bit configuration, supporting 3 | Issi | 7.882 | BOM |
IS42S83200G-7TL-TR | 2S83200G-7TL-TR: | Issi | 5.600 | BOM |
IS42S86400D-6TLI-TR | IS42S86400D-6TLI-TR | Issi | 4.669 | BOM |
IS45S16800F-7CTLA2 | DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II Automotive AEC-Q100 | Issi | 5.852 | BOM |
IS45S16400J-7CTLA2-TR | 4 Megabytes by 16, 143 Megahertz, Copper 54-pin Thin Small Outline Package Type II | Issi | 5.527 | BOM |
IS42S16320D-7TLI-TR | Synchronous dynamic random access memory | Issi | 7.152 | BOM |
IS42S16160G-6TL-TR | Synchronous DRAM with a capacity of 256Mb, organized as 16Mx16, operating at a frequency of 166MHz, requiring a voltage of 3 | Issi | 6.375 | BOM |
IS45S16160G-6TLA1 | ROHS TSOP-54-10.2mm IS45S16160G-6TLA1 SDRAM | Issi | 7.997 | BOM |
IS42S16400J-5TL | TSOP-II 54-pin configuration for easy installation | Issi | 4.314 | BOM |
MT48LC8M16A2P-7E IT:L TR | DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II | Micron Technology | 9.458 | BOM |
AS4C8M16S-7TCNTR | SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TSOP II | Alliance Memory | 9.458 | BOM |
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