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$5000NXP FGA25N120
Make-before-break relay with adjustable delay up to 300s
Marken: Nxp
Herstellerteil #: FGA25N120
Datenblatt: FGA25N120 Datenblatt (PDF)
Paket/Gehäuse: TO-3P
Produktart: Diskrete Halbleiter
RoHS-Status:
Lagerzustand: 3.405 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FGA25N120 Allgemeine Beschreibung
Pin Configuration
Gate: Controls the biasing of the IGBT.
Collector: Current flows in through the collector.
Emitter: Current flows out through the emitter.
2D model
Funktionen
Type: High voltage and high current IGBT with NPT Trench Technology.
Voltage Rating: Collector-Emitter Voltage (VCE) of 1200V.
Current Rating: Collector Current (IC) of up to 50A at 25°C.
Gate Saturation Voltage: Very low gate saturation voltage of 2V, suitable for low-voltage driver-side designs.
Gate Threshold Voltage (VGE): Minimum threshold voltage is 3.5V, maximum is 7.5V.
Gate-Emitter Voltage (VGE): ±20V maximum.
Switching Times: Rise time of approximately 60ns, fall time of approximately 100ns.
Package: Available in To-3P package.
Anwendung
High Voltage, High Current Switching Devices: As mentioned, this IGBT is designed for high voltage and high current switching applications, making it suitable for various power electronics and motor control applications.
Induction Heating: Induction heating systems use high-frequency alternating current to heat conductive materials. IGBTs can be used in the power stages of these systems to control and regulate the heating process efficiently.
Microwave Oven: Microwave ovens use high-power microwave radiation to heat and cook food. IGBTs can be used in the power supply and control circuits of these appliances.
Large Solenoids: Solenoids are electromagnetic devices that generate linear motion when energized. Large solenoids used in industrial applications often require high current control, which IGBTs can provide.
Tesla Coils: Tesla coils are high-frequency resonant transformers used for various purposes, including wireless transmission of electricity and educational demonstrations. IGBTs can be used in the primary and secondary circuits of Tesla coils.
Converters or Inverter Circuits: IGBTs are commonly used in converters and inverter circuits to convert DC power to AC power or vice versa. These circuits are essential in many applications, including motor drives, renewable energy systems (such as solar inverters), and uninterruptible power supplies (UPS).
Alternatives
FGA15N120
TA49123
FGA180N33
FAQ
Where to Implement the FGA25N120 IGBT?
The FGA25N120 stands as a high-voltage, high-current IGBT, capable of proficiently managing voltage levels as considerable as 1200V, coupled with a robust current-handling capability of 50A at 25°C. Impressively, it can effectively tackle momentary current surges, reaching a peak of up to 90A, rendering it ideal for applications that entail substantial voltage and current spikes.
Employing Non Punch Through (NPT) Technology, this IGBT exhibits minimal switching loss and a low saturation voltage. This exceptional characteristic makes it a viable choice for low-voltage switching driver configurations, delivering commendable efficiency within its operational parameters. However, it's crucial to acknowledge that, akin to other IGBTs, the FGA25N120 has its drawbacks, including relatively slower switching speeds and a higher voltage drop across the collector and emitter in comparison to MOSFETs. Therefore, if your design necessitates higher efficiency and swifter switching capabilities, MOSFETs might be the preferred choice. On the other hand, IGBTs excel in applications characterized by elevated switching voltage and current requirements.
How to Use the FGA25N120?
An IGBT can be likened to a fusion of a MOSFET and a BJT, evident in its pin configuration. It boasts a gate on the input side, reminiscent of a MOSFET, and collector and emitter terminals on the output side, resembling a BJT. This amalgamation allows the IGBT to harness the advantages of both MOSFETs and BJTs.
Much like a MOSFET, triggering the gate pin of the IGBT is essential to activate the switch. In the case of the FGA25N120, the minimum gate saturation voltage stands at 2V, but it's customary to employ 5V in most designs. To determine the required gate trigger voltage, it can be calculated based on the collector-emitter voltage and the collector current to be switched, referencing the graph provided in the datasheet.
Once the gate is triggered, the IGBT remains in the "on" state, even after the trigger voltage is removed, similar to a MOSFET. This behavior arises from the gate capacitance present at the input gate pin of the IGBT. To deactivate the device, the gate capacitance must be discharged, typically achieved by connecting the gate pin of the IGBT to ground. Consequently, it's common practice to connect the gate pin of the IGBT to ground through a pull-down resistor of 10k or to utilize a dedicated gate driver IC like the IR2104.
It's paramount to exercise caution when implementing IGBTs in switching circuits, ensuring they are not employed in high-frequency designs. This precaution is essential because the collector-emitter voltage drop (switching loss) of the IGBT escalates with increasing switching frequency.
Versand
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
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Verpackung
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Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FGA25N120 is a high voltage, high-speed switching power mosfet chip. it is commonly used in various electronic devices and industrial applications for its excellent performance and reliability. the chip features low on-resistance, low gate charge, and fast switching characteristics, making it suitable for high-power applications like motor drives, power supplies, and inverters.
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Equivalent
The equivalent products of the FGA25N120 chip are the ixgh25n120b3, hgt1s25n120fn, and irg4pc50ud. -
Features
The features of FGA25N120 include a current rating of 25a, voltage rating of 1200v, low conduction losses, high switching speed, and low on-state resistance. it is a high power igbt (insulated gate bipolar transistor) module suitable for various applications such as motor drives, inverters, and power supplies. -
Pinout
The FGA25N120 is a 25a, 1200v igbt (insulated-gate bipolar transistor) module. it has 7 pins, which include the collector terminal, gate terminal, emitter terminal, and various other control and protection features. -
Manufacturer
The manufacturer of the FGA25N120 is fairchild semiconductor. fairchild semiconductor is a global company that specializes in the design, development, and manufacturing of power semiconductors and integrated circuits. they provide innovative solutions for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The FGA25N120 is a high power igbt (insulated gate bipolar transistor) that is commonly used in industrial and power electronics applications. it can be used in areas such as motor drives, power supplies, inverters, and welding machines. it offers high current handling capabilities and low switching losses, making it suitable for high-performance power conversion systems. -
Package
The FGA25N120 chip has a package type of to-3p, a form of discrete, and a size of 37.5mm x 17.2mm x 6.3mm (l x w x h).
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