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TO-3P
(insgesamt 145 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
FS7M0680TU | Switch-mode Regulator | Onsemi | 9.458 | BOM |
2SD1047 | Bipolar (BJT) Transistor NPN 140 V 12 A 20MHz 100 W Through Hole TO-3P | STMICROELECTRONICS | 9.539 | BOM |
FCA47N60 | FCA47N60 SUPER FET MOSFET 650V | ON Semiconductor, LLC | 3.631 | BOM |
FQA24N50F | TO-3PN-packaged N-channel MOSFET, rated for 500V and 24A current, tailored for railway use, identified as product FQA24N50F | NXP Semiconductor | 2.837 | BOM |
FGA25N120ANTD | Reliable power management component for industrial syste | Onsemi | 2.897 | BOM |
FGA25N120 | Make-before-break relay with adjustable delay up to 300s | Nxp | 3.405 | BOM |
SSH22N50A | MOSFET transistor designed for N-channel operation, rated at 500 volts, 22 amps, and 0.25 ohms | NXP Semiconductor | 2.176 | BOM |
GT15Q101 | High-power transistor for industrial control applications, suitable for high-frequency switching and load commutation | Toshiba | 5.678 | BOM |
2SK3497 | Advanced TON design ensures reliable operation under heavy lo | Toshiba | 7.935 | BOM |
2SK2604 | General-purpose MOSFET for high-power switching circuits, offering low on-state resistance and fast switching time | Toshiba | 9.320 | BOM |
BUZ341 | 33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | Infineon Technologies Corporation | 2.833 | BOM |
FFA30U60DN | A silicon-based rectifier diode configured for single-phase applications, equipped with two semiconductor elements | Onsemi | 5.881 | BOM |
STGWT40HP65FB | Trench gate field-stop 650 V, 40 A high-speed HB series IGBT | Stmicroelectronics | 3.394 | BOM |
RJK6015DPK | OEMs, CMs ONLY (NO BROKERS) | Renesas Technology Corp | 2.214 | BOM |
IXGQ240N30PB | POLAR IGBTs designed for PDP applications, featuring a 300V 500A specification | IXYS | 9.458 | BOM |
IXTQ480P2 | Power Field-Effect Transistor, 52A Drain Current, 500V Voltage Rating, 0 | IXYS | 6.062 | BOM |
BUZ901P | High power N-channel Mosfet | Tt Electronics | 9.458 | BOM |
2SD2083 | NPN Darlington Transistor featuring 120V Voltage Rating and 25A Current Rating, housed in TO-3P package | Allegro Microsystems | 7.448 | BOM |
2SA1492 | 15A I(C), 180V V(BR)CEO | Allegro Microsystems | 9.959 | BOM |
2SA1694 | TO-3P PNP Transistor 8A 120V | Allegro Microsystems | 9.431 | BOM |
2SC3856 | High-performance NPN transistor for power conversion, motor control, and other industrial applications | Allegro Microsystems | 6.003 | BOM |
2SC4140 | Compact three-pin power transistor with tabulated metal ca | Allegro Microsystems | 6.754 | BOM |
2SB1559 | Silicon-based solution for applications | Sanken Electric Co., Ltd | 7.055 | BOM |
2SB1560 | 2SB1560 is a PNP Darlington transistor designed for use in various electronic circuits | Allegro Microsystems | 6.694 | BOM |
2SC4467 | Bipolar junction transistors (BJT) of NPN type, housed in TO-3PN package, designed for 120V, 80W, and 8A | Allegro Microsystems | 9.922 | BOM |
IXGQ90N33TCD1 | This product is a Trans IGBT Chip designed for high-power applications with a 330V voltage threshold | Ixys | 8.610 | BOM |
2SC5386 | 2SC5386 Power Bipolar Transistor | Toshiba | 6.159 | BOM |
2SD2389 | Silicon NPN Darlington Power Transistor | Sanken Electric Co., Ltd | 6.323 | BOM |
2SB1383 | TO-3P Packaged Bipolar Transistor | Allegro Microsystems | 5.076 | BOM |
2SB1647 | TO-3P Darlington Transistors ROHS | Allegro Microsystems | 9.638 | BOM |
2SC4468 | A Silicon NPN Power Bipolar Transistor featuring a 10A Collector Current and a 140V Collector-Emitter Breakdown Voltage | Allegro Microsystems | 8.398 | BOM |
STGWT28IH125DF | Suitable for driving induction motors, DC brushed motors, and other heavy-duty loads | STMICROELECTRONICS | 6.815 | BOM |
STR-X6769 | 22A Voltage-mode Regulator | Sanken Electric USA Inc. | 8.816 | BOM |
SBL2040PT | 20A Schottky Rectifier Diode, 40V V(RRM), Silicon, 1 Phase, 2 Element, ROHS COMPLIANT, Plastic TO-3P, 3 PIN | Diodes Incorporated | 6.879 | BOM |
SBL4040PT | Rectifier Diode with Schottky Technology, Single Phase, 2 Active Elements, 40 Amperes, 40 Volts Reverse Voltage Rating | Diodes Incorporated | 7.196 | BOM |
SBL3060PT | Rectifier Diode SBL3060PT - Schottky | Diodes Incorporated | 9.458 | BOM |
SBL1640PT | Solely for OEMs and CMs (No Brokerage) | Diodes Incorporated | 9.458 | BOM |
SBL4060PT | Technical Information: SBL4060PT, part of the Schottky diodes and rectifiers range, specified to support currents of 40A and tolerate voltages of 60V | Diodes Incorporated | 9.458 | BOM |
SBL6040PT | Diode Schottky with 40V and 60A rating in TO-3P package | Diodes Incorporated | 9.458 | BOM |
SBL4045PT | TO-3P Schottky Diode 45V 40A | Diodes Incorporated | 9.458 | BOM |
MBR3040PT | Low-voltage high-current Schottky diode with low forward voltage drop ( character | Diodes Incorporated | 9.458 | BOM |
KA1M0880BTU | 5+ tab power switch capable of handling 8A current, suitable for TO-3P rail installation | onsemi | 7.568 | BOM |
IXTQ36N50P | TO3P Packaged N-Channel MOSFET rated at 36A and 500V | IXYS | 8.811 | BOM |
FQA19N20 | High Voltage N-Channel MOSFET TO-3P Style | FAIRCHILD SEMICONDUCTOR CORP | 5.431 | BOM |
FQA16N25C | FQA16N25C is compliant with ROHS standards, making it environmentally friendly | Fairchild Semiconductor | 6.145 | BOM |
FQA7N80C | High voltage N-channel MOSFET | onsemi | 5.758 | BOM |
BUV48AFI | Durable construction and reliable performance make this bipolar junction transistor (BJT) ideal for a wide range of applications | STMICROELECTRONICS | 7.902 | BOM |
BTA26-400B | BTA26-400B is a 400-volt, 25-amp, 4-quadrant logic level TRIAC, housed in a plastic package with a TOP3 configuration and featuring 3 pins | STMICROELECTRONICS | 8.344 | BOM |
BTB41-800B | Triangular component with reliable current ratin | STMICROELECTRONICS | 6.979 | BOM |
PQ7DV10 | Compatible with PQ7DV10J000H | Sharp Microelectronics | 6.506 | BOM |
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