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FBGA-84
(insgesamt 58 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
MT47H64M16HR-3 IT:H | High-speed DDR DRAM for fast data transfer | Micron Technology | 6.077 | BOM |
K4T1G164QQ-HCE6 | High-speed processing for efficient device performance | SAMSUNG | 6.547 | BOM |
MT47H64M16NF-25E:M | Advanced memory technology ensures efficient data processing and retrieva | Micron Technology | 6.749 | BOM |
MT47H128M16RT-25E:C | Product code: MT47H128M16RT-25E:C, | Micron Technology | 6.513 | BOM |
H5PS5162GFR-S5C | CMOS PBGA84 DDR DRAM 32MX16 0.4NS | SK HYNIX INC | 6.554 | BOM |
K4T51163QJ-BCE6000 | Ncnr As Of Oct 2013 Replacement: K4T51163QQ-BCE6000 | SAMSUNG | 6.554 | BOM |
MT47H64M16HR-3:H | 84-Pin FBGA T/R/Tray DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V | Micron Technology | 9.458 | BOM |
MT47H128M16HG-3:A | 11.50 X 14 MM, 128MX16 DDR DRAM, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | micron technology | 9.292 | BOM |
MT47H64M16NF-25E IT:M | DDR2 DRAM memory module with 1 Gbit capacity | Micron Technology | 8.840 | BOM |
MT47H32M16NF-25E IT:H | MT47H32M16NF-25E IT:H | Micron Technology | 7.241 | BOM |
MT47H64M16NF-25E:M TR | DDR2 SDRAM Memory Chip | Micron Technology | 9.458 | BOM |
MT47H32M16NF-25E AIT:H | Multi-gigabit Data Rate Technology | Micron Technology | 9.458 | BOM |
AS4C64M16D2-25BIN | AS4C64M16D2-25BIN offers fast data transfer speeds and reliable performance for a wide range of applications | Alliance Memory | 9.458 | BOM |
MT47H64M16HR-3 IT:G | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray | MICRON TECHNOLOGY INC | 6.554 | BOM |
MT47H128M16RT-3:C | This CMOS technology-based DDR DRAM chip is housed in a compact PBGA84 package measuring 9 x 12 | MICRON TECHNOLOGY INC | 8.866 | BOM |
K4T1G164QQ-HCF7 | High-speed DDR memory chip with 64 million columns and 16 rows | SAMSUNG | 7.007 | BOM |
IS43DR16640A-3DBLI | DDR2 1Gb memory module | INTEGRATED SILICON SOLUTION INC | 9.137 | BOM |
AS4C32M16D2-25BCN | Advanced Synchronous Dynamic Random Access Memory | Alliance Memory | 6.554 | BOM |
MT47H64M16NF-25E IT:M TR | MT47H64M16NF-25E IT:M TR | Micron Technology | 9.458 | BOM |
W971GG6JB-25I | This product is a DDR DRAM with a capacity of 64MX16 and a fast speed of 0.4ns, suitable for high-performance applications | WINBOND ELECTRONICS CORP | 6.554 | BOM |
NT5TU32M16DG-AC | Reputable French Electronics Distributor with over 30 years of experience | NANYA TECHNOLOGY CORP | 6.554 | BOM |
MT47H32M16HR-3 IT:F | Only for OEMs and CMs | Micron Technology Inc. | 6.554 | BOM |
S29WS256P0PBFW000 | Burst parallel architecture ensures rapid data access and processing | Infineon Technologies Corporation | 2.096 | BOM |
MT47H128M16RT-25E AIT:C | SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 84-FBGA (9x12.5) | Micron Technology | 6.554 | BOM |
K4T51163QI-HCE7 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, | SAMSUNG SEMICONDUCTOR INC | 6.554 | BOM |
MT47H64M16HR-3IT:E | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | MICRON TECHNOLOGY INC | 6.554 | BOM |
MT47H64M16NF-25EIT | IC DRAM 1GBIT PARALLEL 84FBGA | MICRON | 6.554 | BOM |
MT47H64M16HR-25EIT | MICRON | 6.554 | BOM | |
MT47H64M16HR-25E(H) | Enhancing computing experiences through high-density and low-power DDRSDRAM technology | Micron Technology | 7.790 | BOM |
MT47H128M16RT-25EIT:C | Compact -pin FBGA package for space-constrained desig | Micron | 5.754 | BOM |
MT47H64M16NF-25EAIT:M | This product is designed for use in high-performance computing and networking applications." | Micron Technology | 2.220 | BOM |
MT47H128M16HG-3A | 11.50 X 14 MM, 128MX16 DDR DRAM, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Micron Technology | 5.400 | BOM |
IM1G16D2DDBG-25I | Reliable and fast data transfer with up to Mbp | Intelligent Memory | 4.824 | BOM |
AS4C32M16D2C-25BIN | Power-efficient storage solution for modern devic | Alliance Memory | 3.957 | BOM |
S29WS064RABBHI000 | Compact and versatile flash memory for diverse use | Infineon | 4.093 | BOM |
AS4C128M16MD2A-25BIN | Industrial-grade LPDDR2 memory with reliable performance | Alliance Memory | 6.722 | BOM |
AS4C16M16D2-25BCN | Compact and efficient storage device for fast data acces | Alliance Memory | 7.935 | BOM |
MT47H32M16NF-25E AIT:H TR | Advanced DDRSDRAM chip for robust performance need | Micron Technology | 5.824 | BOM |
MT47H32M16NF-25E AAT:H TR | State-of-the-art design and manufacturing for superior performance and compatibilit | Micron Technology | 3.177 | BOM |
AS4C64M16D2A-25BCNTR | Robust and efficient memory chip ideal for complex system design | Alliance Memory | 3.897 | BOM |
AS4C64M16D2A-25BANTR | Advanced SDRAM technology offers fast data transfer rates for demanding application | Alliance Memory | 6.266 | BOM |
V59C1G01168QBJ25 | With a memory capacity of b, the VCBJ is a high-performance memory solution perfect for demanding applications and data-intensive system | PROMOS | 5.832 | BOM |
AS4C64M16D2A-25BCN | High-speed, low-power consumption, ideal for cloud computing and data centers | Alliance Memory | 3.317 | BOM |
AS4C16M16D2-25BIN | Dual in-line memory module (DIMM) with million bits of fast data transfer | Alliance Memory | 7.214 | BOM |
AS4C32M16D2A-25BCNTR | High-Speed Memory Solution for Data Center | Alliance Memory | 7.822 | BOM |
AS4C128M16D2A-25BIN | High-speed memory for demanding applicatio | Alliance Memory | 6.675 | BOM |
AS4C32M16D2A-25BIN | High-performance memory solution for demanding application | Alliance Memory | 4.027 | BOM |
AS4C64M16D2B-25BCN | High-performance component for modern computing system | Alliance Memory | 6.226 | BOM |
S29WS128P0PBFW000 | Packaged in an 84-Pin FBGA Tray | Infineon Technologies Corporation | 3.925 | BOM |
S71WS512PD0HH3YRO | MCP 32Mx16 Flash + 8Mx16 PSRAM 1.8V 84-Pin FBGA Tray | Infineon Technologies Ag | 2.902 | BOM |
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