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SOT-416-3
(insgesamt 30 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| 2SC4617TLR | Bipolar NPN Transistor, 50V, 0.15A, SOT-416 Package | Rohm Semiconductor | 9.458 | BOM |
| RE1C001UNTCL | Transistor Metal Oxide Semiconductor Field Effect N-Channel 20 Volts 0.1 Amps Tape and Reel | Rohm Semiconductor | 5.599 | BOM |
| DTC123JETL | EMT Packaged NPN BJT for Trans Digital Applications | Rohm Semiconductor | 9.895 | BOM |
| 2SK3019TL | High-quality N-channel MOSFET transistor for reliable switching applications | Rohm Semiconductor | 5.073 | BOM |
| DTC143ZETL | Trans Digital BJT NPN 50V 100mA 150mW 3-Pin EMT T/R | Rohm Semiconductor | 6.802 | BOM |
| SMMBT3904TT1G | Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SC-75, SOT-416 | onsemi | 9.458 | BOM |
| SSM3K72KFS,LF | SSM3K72KFS,LF is a SC-75(SOT-416) MOSFET designed for applications requiring a maximum power dissipation of 150mW at 10V and a threshold voltage of 2 | TOSHIBA CORP | 9.707 | BOM |
| SSM3K37FS,LF | Small form factor SOT-416 MOSFET compliant with ROHS regulations | Toshiba | 9.458 | BOM |
| SSM3K56FS,LF | This MOSFET is designed for N-channel operation and utilizes U-MOSVI technology, providing a maximum drain current of 0 | Toshiba | 9.458 | BOM |
| SSM3K15AFS,LF | 0.1 Amp N-Channel MOSFET | Toshiba | 9.458 | BOM |
| SI1022R-T1-GE3 | A MOSFET housed in SC75A packaging, featuring a 60V Vds and a 20V Vgs | Vishay | 9.458 | BOM |
| RUE002N02TL | 20V, 0.2A N-Channel MOSFET for Small Signal Switching | ROHM Semiconductor | 9.529 | BOM |
| DTC123YETL | Accurate and efficient power management device | ROHM Semiconductor | 9.809 | BOM |
| DTC143EETL | NPN Silicon Transistor featuring a single element for electronic circuitry applications | ROHM Semiconductor | 8.371 | BOM |
| DTA143EETL | Compact surface-mount design suitable for small-space application | ROHM Semiconductor | 6.556 | BOM |
| DTA144EETL | Robust pre-biased PNP transistor for precision contro | ROHM Semiconductor | 6.892 | BOM |
| DTA123EETL | Description for product DTA123EETL: Small signal bipolar transistor, PNP silicon, rated for 0 | ROHM Semiconductor | 7.771 | BOM |
| DAN235E | Mixer Diode with Ultra-Small Silicon in SC-75A Package, 3 Pins | ROHM CO LTD | 5.796 | BOM |
| 2SC4617TLQ | RoHS-compliant and ready to ship within 1 day. Dated 2022 | ROHM Semiconductor | 9.458 | BOM |
| SSM3K56FS | High-performance MOSFET for demanding system | toshiba | 9.497 | BOM |
| RE1J002YNTCL | Rapidly shippable RoHS compliant product with 2022 discontinuation date | ROHM Semiconductor | 6.892 | BOM |
| RE1E002SPTCL | Features: P Channel SOT-416 MOSFETs suitable for 30V and 250mA applications | ROHM Semiconductor | 6.179 | BOM |
| RE1C002UNTCL | Small Signal Mosfet - EMT-3F RE1C002UN Series 20 V 1.2 Ohm 200 mA Surface Mount | Rohm Semiconductor | 6.738 | BOM |
| BC847T,115 | Compact and efficient bipolar transistor design for demanding application | Nexperia | 3.904 | BOM |
| NSVBAV70TT3G | Diode Array 1 Pair Common Cathode 100 V 100mA (DC) Surface Mount SC-75, SOT-416 | onsemi | 9.458 | BOM |
| PDTC143EE,115 | Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 30 @ 10mA 5V 100mA 150mW 50V | Nexperia | 9.458 | BOM |
| PDTC124EE,115 | Pre-Biased Bipolar Transistor (BJT) | Nexperia | 9.458 | BOM |
| PDTA114EE,115 | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 150 mW Surface Mount SC-75 | Nexperia | 9.458 | BOM |
| 2SA1774E3HZGTLQ | 2SA1774E3HZGTLQ | ROHM Semiconductor | 9.458 | BOM |
| NX3008PBKT,115 | P-Channel 30 V 200mA (Ta) 250mW (Ta), 770mW (Tc) Surface Mount SC-75 | Nexperia | 9.458 | BOM |
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