Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Für weitere Informationen werfen Sie bitte einen Blick auf unsere Datenschutzrichtlinie.
TO-220-3
(insgesamt 3791 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| IXFP7N100P | Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-220AB | IXYS | 7.754 | BOM |
| KA7812ETU | With a wide operating range and high output current, this linear regulator is perfect for powering small circuits | Onsemi | 5.784 | BOM |
| KA7812 | Compact +V voltage regulator for efficient power supp | Onsemi | 7.608 | BOM |
| IRL3303 | High-power N-channel MOSFET transistor for demanding application | Infineon Technologies | 8.410 | BOM |
| IRL640A | N-Channel 200 V 18A (Tc) 110W (Tc) Through Hole TO-220-3 | onsemi | 9.458 | BOM |
| IXKC20N60C | Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) ISOPLUS 220 | IXYS | 9.458 | BOM |
| IXFP16N50P | IXFP16N50P MOSFETs TO-220-3 ROHS | IXYS | 9.601 | BOM |
| IXFP6N120P | Through-Hole Polarized TO220 | IXYS | 5.839 | BOM |
| IXFP5N100P | N-Channel Silicon MOSFET, rated for 5A current and 1000V voltage, TO-220 package | IXYS | 7.214 | BOM |
| IXFP10N60P | MOSFET DIS 10A 600V N-Channel TO220 HIPERFET Through-Hole Technology | IXYS | 9.125 | BOM |
| IPS1011PBF | Achieve precision control over power output with the IPS1011PBF smart low side limit switch." | Infineon | 9.458 | BOM |
| FCP22N60N | Tube packaging for N-channel MOSFET with 600V voltage and 22A current | onsemi | 7.869 | BOM |
| FCP20N60 | FCP20N60 represents a high-performance N-Channel Power MOSFET integrated with SUPERFET® technology, designed for easy driving applications | Onsemi | 8.126 | BOM |
| FQP3P20 | MOSFET 200V P-Channel QFET | onsemi | 9.458 | BOM |
| FDP047AN08A0 | N-Channel PowerTrench MOSFET with 75V Voltage Rating | Onsemi | 5.182 | BOM |
| FYP2010DNTU | 20A Schottky diode, TO-220 package, 100V voltage rating | onsemi | 9.458 | BOM |
| FJP5200RTU | TRANSISTOR, NPN, 250V, 17A, TO-220-3 | onsemi | 8.738 | BOM |
| FJP13007 | Bipolar Transistors - BJT NPN/8A/400V TO-220 | onsemi | 5.572 | BOM |
| FCPF11N60 | N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3 | onsemi | 6.895 | BOM |
| FDPF7N60NZ | N-Channel 600 V 6.5A (Tc) 33W (Tc) Through Hole TO-220F-3 | onsemi | 9.458 | BOM |
| FQP32N20C | N-Channel 200 V 28A (Tc) 156W (Tc) Through Hole TO-220-3 | onsemi | 5.356 | BOM |
| FQPF20N06 | MOSFET 60V N-Channel QFET | onsemi | 9.458 | BOM |
| FQPF15P12 | Reliable power handling and low on-state resistance solution | onsemi | 9.458 | BOM |
| FQP85N06 | MOSFET 60V N-Channel QFET | onsemi | 9.458 | BOM |
| FQP4N90C | 4 Amp 900 Volt N-Type Power MOSFET in TO-220 Enclosure | Onsemi | 7.272 | BOM |
| FQP6N60C | The FQP6N60C is an N-channel MOSFET belonging to the Advanced Q-FET C-Series, designed to operate at voltages up to 600V | Onsemi | 9.458 | BOM |
| FQP19N20C | N-Channel 200 V 19A (Tc) 139W (Tc) Through Hole TO-220-3 | onsemi | 5.200 | BOM |
| FQPF5P20 | TO-220F P-Channel Silicon Power MOSFET, 3.4A, 200V, 1.4ohm | Onsemi | 9.458 | BOM |
| FQPF5N90 | Tube Packaging for FQPF5N90 Transistor | Onsemi | 9.458 | BOM |
| FQP19N20 | Product FQP19N20 is a MOSFET with a 200V N-Channel QFET configuration | Onsemi | 7.714 | BOM |
| FQPF11N40C | N-Channel Silicon MOSFET with 400V Voltage Rating | Onsemi | 6.795 | BOM |
| FQPF12N60C | Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F | Onsemi | 7.766 | BOM |
| FQP3N80C | MOSFET 800V N-Ch Q-FET advance C-Series | onsemi | 5.132 | BOM |
| FQP10N20C | N-Channel 200 V 9.5A (Tc) 72W (Tc) Through Hole TO-220-3 | onsemi | 7.680 | BOM |
| FQPF9N25C | FQPF9N25C MOSFET has a power dissipation of 38W at 4.4A and 4V | onsemi | 9.458 | BOM |
| FQP34N20 | N-Channel 200 V 31A (Tc) 180W (Tc) Through Hole TO-220-3 | onsemi | 9.458 | BOM |
| FQP8N60C | MOSFET 600V N-Ch Q-FET advance C-Series | onsemi | 8.865 | BOM |
| FQP5N60C | TO-220 3-Pin Transistor | onsemi | 9.645 | BOM |
| FQPF6N90C | High-performance power device for rail-to-rail applications | Onsemi | 9.530 | BOM |
| FQPF33N10 | FQPF33N10: TO-220F Packaged N-Channel MOSFET, Rated at 100V and 18A | onsemi | 9.458 | BOM |
| FQP2N90 | FQP2N90 is an N-channel TO-220 MOSFET compliant with RoHS regulations, featuring a voltage threshold of 900V, current rating of 2 | Onsemi | 6.958 | BOM |
| FQP22P10 | Description: QFET P-Channel MOSFET with 100V rating | Onsemi | 9.143 | BOM |
| FQP44N10 | N-channel power MOSFET with 100V voltage rating and 43.5A current rating in TO-220 package | Onsemi | 7.533 | BOM |
| FQP20N06L | N-Channel 60 V 21A (Tc) 53W (Tc) Through Hole TO-220-3 | onsemi | 9.458 | BOM |
| FQP20N06 | N-Channel 60 V 20A (Tc) 53W (Tc) Through Hole TO-220-3 | onsemi | 7.670 | BOM |
| FQPF8N90C | FQPF8N90C is a Power Field-Effect Transistor with a rating of 6.3A and 900V, featuring an N-Channel design and TO-220AB package | Onsemi | 6.641 | BOM |
| FQP6N90C | channel with 900V 6A TO-220 package | Onsemi | 5.241 | BOM |
| FQP2N60C | FQP2N60C is an N-Channel MOSFET with a 2 A current rating and a 600 V voltage threshold | onsemi | 5.029 | BOM |
| FQP13N50 | MOSFET 500V N-Channel QFET | onsemi | 7.979 | BOM |
| FDP65N06 | Advanced power electronics component suitable for high-frequency and high-voltage usage | Onsemi | 5.970 | BOM |
Anderes Paket