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TO-220-3
(insgesamt 3791 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| FDP083N15A | 150V N-Channel PowerTrench MOSFET with 117A current rating and 8.3mΩ resistance | Onsemi | 7.655 | BOM |
| VS-30CTQ060PBF | Designed for high-frequency applications where low forward voltage drop and high current capability are crucial | Vishay | 6.004 | BOM |
| TYN0512 | 12A, 50V, Silicon Controlled Rectifier, TO-220AB | Stmicroelectronics | 6.133 | BOM |
| T2800DG | THY-specific TRIACs for precise control | Littelfuse Inc. | 7.977 | BOM |
| TIP42CTU | Bipolar (BJT) Transistor PNP 100 V 6 A 3MHz 2 W Through Hole TO-220-3 | ROCHESTER ELECTRONICS LLC | 9.190 | BOM |
| TIP41CTU | Bipolar (BJT) Transistor NPN 100 V 6 A 3MHz 2 W Through Hole TO-220-3 | onsemi | 8.598 | BOM |
| TIC106M | SCR with 5A RMS current, 3200mA on-state current, and 600V reverse voltage in a TO-220AB plastic package | Bourns | 9.580 | BOM |
| TIC236D | Logic level triac capable of 4 quadrant operation at 400V, 12A | Bourns | 8.418 | BOM |
| TISP2180 | Rugged and Reliable Thyristor Surge Protection Device with A Rating and TO-Housin | Bourns | 9.248 | BOM |
| STP3NB60 | N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET | Stmicroelectronics | 7.190 | BOM |
| STP4NB80 | Power MOSFET in N-CHANNEL configuration, built with Silicon technology, rated for 4A current and 800V voltage, packaged in TO-220AB, exhibiting 3 | Stmicroelectronics | 9.458 | BOM |
| STP14NF12 | Transistor MOSFET N-channel with a voltage rating of 120V and a current rating of 14A in a TO-220AB package | Stmicroelectronics | 8.663 | BOM |
| T2550H-600T | Triac T2550H-600T: A 600-volt, 25-amp Snubberless device, TO-220AB package | Stmicroelectronics | 9.458 | BOM |
| SUP75P05-08 | 0.008 ohm on-resistance P-channel MOSFET in TO-220AB package | Vishay | 7.125 | BOM |
| SKP10N60A | The SKP10N60A is an N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum current rating of 20A and a breakdown voltage of 600V | Infineon | 6.287 | BOM |
| SBR20U100CT | SBR20U100CT - Super Barrier Rectifier, 20 Amperes, RoHS Compliant" | Diodes Incorporated | 7.159 | BOM |
| SGP30N60HS | Transistors based on NPT technology, offering high-speed switching characteristics at 600V and 30A | Infineon | 6.218 | BOM |
| SGP15N60 | SGP15N60 Insulated Gate Bipolar Transistor 15A 600V TO220 | Infineon | 9.969 | BOM |
| SGP06N60 | A robust TO-220AB-packaged Insulated Gate Bipolar Transistor (IGBT) with an N-channel configuration | Infineon | 8.869 | BOM |
| Q8016RH4 | TRIAC 800V 200A TO-220AB Non-Isolated 3-Pin(3+Tab) | Littelfuse Inc. | 7.501 | BOM |
| Q6015R5 | Triacs within product Q6015R5 are engineered to withstand voltages of 600V and currents up to 15A, distributed as 50-50-50mA | Littelfuse Inc. | 9.607 | BOM |
| Q6008R5 | Triacs rated for 600V, 8A, and a gate trigger current of 50-50-50mA | Littelfuse Inc. | 5.763 | BOM |
| Q8006RH4 | High-voltage switching solution for industrial applications | Littelfuse Inc. | 8.485 | BOM |
| PHX9NQ20T | Power MOSFET for Rail Applications | Nxp | 6.106 | BOM |
| PSMN022-30PL,127 | Logic level MOSFET featuring N-channel design, with a 30-volt operational capacity and an on-resistance of 22 milliohms | Nexperia USA Inc. | 9.113 | BOM |
| PSMN7R6-60PS,127 | 60 V N-channel standard level MOSFET featuring 7.8 mΩ | Nexperia USA Inc. | 6.989 | BOM |
| NTP45N06LG | Power MOSFET with 45 Amps and 60 Volts | onsemi | 5.203 | BOM |
| NTP30N06LG | N-Channel 60 V 30A (Ta) 88.2W (Tc) Through Hole TO-220 | onsemi | 5.237 | BOM |
| NTP52N10G | TO-220 Power MOSFET featuring 60A current rating, 100V voltage rating, N-Channel enhancement mode, standard 3-lead TO-220 package, 50-tube packaging | onsemi | 8.344 | BOM |
| NTP75N06G | N-Channel 60 V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220 | onsemi | 8.080 | BOM |
| NTP5864NG | Reliable TO-package suitable for through-hole mounting and surface-mount processin | onsemi | 9.458 | BOM |
| PHP20NQ20T,127 | N-Channel 200 V 20A (Tc) 150W (Tc) Through Hole TO-220AB | NXP Semiconductors | 8.103 | BOM |
| MTP12P10 | Power MOSFET with 12 Amps and 100 Volts, P Channel TO-220 | onsemi | 8.057 | BOM |
| MTP23P06V | P-Channel 60 V 23A (Tc) 90W (Tc) Through Hole TO-220 | onsemi | 5.840 | BOM |
| MTP50P03HDLG | Product Overview: MTP50P03HDLG is a high-performance Power MOSFET engineered for applications requiring efficient power handling | Onsemi | 6.374 | BOM |
| NDP7060 | N-Channel 60 V 75A (Tc) 150W (Tc) Through Hole TO-220-3 | onsemi | 9.458 | BOM |
| NDF02N60ZG | N-Channel 600 V 2.4A (Tc) 24W (Tc) Through Hole TO-220FP | onsemi | 9.458 | BOM |
| NDF10N60ZH | N-Channel 600 V 10A (Tc) 39W (Tc) Through Hole TO-220-2 Full Pack | onsemi | 9.458 | BOM |
| NDF11N50ZG | N-Channel 500 V 12A (Tc) 39W (Tc) Through Hole TO-220FP | onsemi | 9.458 | BOM |
| MTP23P06VG | 23 Amps Power MOSFET with 60 Volts | Onsemi | 8.291 | BOM |
| NTP18N06G | Versatile V A N-channel MOSFET suitable for various industrial use | onsemi | 7.238 | BOM |
| NCP7805TG | Linear Voltage Regulators 1A LDO | onsemi | 9.458 | BOM |
| MCR69-2G | SCR 50 V 25 A Standard Recovery Through Hole TO-220AB | Littelfuse Inc. | 9.118 | BOM |
| MTP36N06V | Three-pin power MOSFET designed for high-power applications | Onsemi | 9.458 | BOM |
| MTP10N10ELG | Power MOSFET rated for 10 Amps and 100 Volts with Logic Level compatibility | Onsemi | 7.581 | BOM |
| MTP12P10G | Power MOSFET with 12 Amps and 100 Volts in P Channel TO-220 package | Onsemi | 6.723 | BOM |
| MJE5740 | Trans Darlington NPN 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube | onsemi | 9.458 | BOM |
| MJE13009G | This NPN Bipolar Power Transistor has a maximum current rating of 12 amperes | Onsemi | 9.458 | BOM |
| MJE13005G | Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 2 W Through Hole TO-220 | onsemi | 7.262 | BOM |
| MBR20100CTP | ROHS Compliant Schottky Barrier Diodes | Littelfuse Inc. | 8.509 | BOM |
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