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TO-220AB
(insgesamt 642 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| T435-800T | Featuring a voltage rating of 800V and a current handling capability of 4A, product T435-800T is a Triac housed in a TO220AB package | Stmicroelectronics | 9.458 | BOM |
| T1635H-6T | TRIAC Alternistor - Snubberless 600 V 16 A Through Hole TO-220 | STMICROELECTRONICS | 8.798 | BOM |
| STPS30L45CT | TO-220AB Schottky Barrier Rectifier Diode rated for 45V with a Maximum Forward Voltage Drop of 30A | Stmicroelectronics | 9.458 | BOM |
| STTH1002CT | Diode Array 1 Pair Common Cathode 200 V 8A Through Hole TO-220-3 | STMICROELECTRONICS | 9.749 | BOM |
| BTB12-600BWRG | Three-pin, three-terminal power semiconductor component for demanding designs | Stmicroelectronics | 6.116 | BOM |
| BTB16-800BWRG | The BTB16-800BWRG product: Triacs capable of handling currents up to 16 amps and voltages up to 600 volts | Stmicroelectronics | 9.747 | BOM |
| BTB16-600BRG | TRIAC Standard 600 V 16 A Through Hole TO-220 | STMICROELECTRONICS | 9.781 | BOM |
| TYN612RG | Product TYN612RG is a TRIAC with a maximum current rating of 30mA and 15mA and a voltage rating of 600V in a TO-220AB-3 package | Stmicroelectronics | 9.458 | BOM |
| TYN625RG | Single-Way Controllable Silicon TYN625RG: 600V, 50mA, ITO-220AB-3 Package, Complies with ROHS Standards | Stmicroelectronics | 8.325 | BOM |
| TYN640RG | Described as TYN640RG | Stmicroelectronics | 6.704 | BOM |
| STPS20S100CT | Robust TO-package withstands harsh operating conditio | Stmicroelectronics | 9.698 | BOM |
| FERD30H100STS | Diode 100 V 30A Through Hole TO-220AB | STMICROELECTRONICS | 6.088 | BOM |
| BTB24-600CWRG | BTB24 Series 600 V 25 A Flange Mount Snubberless Triac - TO-220AB | STMICROELECTRONICS | 5.674 | BOM |
| NTP5D0N15MC | N-Channel 150 V 15A (Ta), 139A (Tc) 2.4W (Ta), 214W (Tc) Through Hole TO-220 | Onsemi | 9.458 | BOM |
| SCT2120AF | Advanced IC design for precise power control and minimal distortion. (98 chars) | ROHM Semiconductor | 8.769 | BOM |
| MJE13003-BP | Detailed Overview: MJE13003-BP Bipolar Junction Transistor | Micro Commercial Components (MCC) | 9.458 | BOM |
| VS-MUR2020CTPBF | Compact and reliable, this TO-B tube is designed for high-performance diode switching application | Vishay | 9.733 | BOM |
| SUP85N10-10-E3 | N-channel power MOSFET capable of operating at 175°C and rated for 100V | VISHAY INTERTECHNOLOGY INC | 7.488 | BOM |
| SBL2030CT | Schottky Diodes & Rectifiers with a 20A current rating and 30V voltage capacity | ADVANCED POWER TECHNOLOGY INC | 5.759 | BOM |
| RFP10P03L | 10A P-CHANNEL Silicon Power MOSFET with 30V Voltage Rating and 0.2ohm Resistance, TO-220AB | INTERSIL CORP | 8.157 | BOM |
| RFP8P10 | High-power switching device for DC loa | Fairchild Semiconductor | 7.396 | BOM |
| MBR20100CT-BP | High-power switching device for demanding application | Micro Commercial Components (MCC) | 9.458 | BOM |
| IRFB17N60K | N-Channel Silicon Metal-oxide Semiconductor FET | Vishay | 5.817 | BOM |
| IRG4BC40F | TO-220AB Tube package | Infineon Technologies AG | 9.703 | BOM |
| IRFZ30 | Fast switching speed and high current handling make it suitable for renewable energy systems | Vishay Siliconix | 8.238 | BOM |
| IPS1031PBF | Gate Drivers rated for 40V and 25A | Infineon | 7.365 | BOM |
| BUK7575-100A,127 | High-performance MOSFET solution for rail power applications ( character | NXP | 7.602 | BOM |
| BUK7508-40B | Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | PHILIPS SEMICONDUCTORS | 9.183 | BOM |
| TK100E10NE | Transistor MOSFET N-channel Silicon 100V 100A 3-Pin TO-220AB Tube | Toshiba | 6.296 | BOM |
| G20100CTW | Diode Schottky TO-220 AB 20A 3-Pin | Diodes Incorporated | 5.540 | BOM |
| UES2403 | UES2403 is a rectifier diode switching component with a voltage rating of 150V and a current capacity of 16A | Microchip Technology | 7.173 | BOM |
| SR16100 | Schottky diode in TO-220AB packaging | Taiwan Semiconductor | 8.120 | BOM |
| RFD10P03L | 10A P-CHANNEL power MOSFET with 30V voltage rating and 0.2ohm resistance | INTERSIL CORP | 6.382 | BOM |
| MTP1N60E | TO-220AB package with 3 pins and tab for easy mounting | onsemi | 7.353 | BOM |
| MTP1N100E | 220ab n-channel mosfet transistor mtp1n100e | onsemi | 7.321 | BOM |
| IRG4BC30KD | TO-220AB Tube package with 3 pins and 3 tab contact points | Infineon Technologies AG | 7.375 | BOM |
| IRG4BC30FD | Suitable for Applications Requiring High Voltage Operation up to 600V | Infineon Technologies AG | 7.761 | BOM |
| G30100CTW | Schottky Rectifier Devices | Diodes Incorporated | 6.358 | BOM |
| IRL40B209 | IRL40B209: A unipolar N-MOSFET transistor suitable for applications up to 40 volts | INFINEON TECHNOLOGIES AG | 5.340 | BOM |
| SUP60N06-18-E3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | vishay | 8.194 | BOM |
| MAC228A8 | TRIAC Logic - Sensitive Gate 600 V 8 A Through Hole TO-220AB | onsemi | 6.832 | BOM |
| RF1001T2D | Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3 Full Pack | ROHM Semiconductor | 8.775 | BOM |
| 25TTS12FPPBF | SCR 1.2 kV 25 A Standard Recovery Through Hole TO-220 Full Pack | Vishay | 5.496 | BOM |
| GP1004 | Diode Array 1 Pair Common Cathode 400 V 10A Through Hole TO-220-3 | Taiwan Semiconductor Corporation | 9.663 | BOM |
| VN2406D | MOSFET 240V 1.12A | Vishay | 9.458 | BOM |
| IRFZ48R | N-Channel 60 V 50A (Tc) 190W (Tc) Through Hole TO-220AB | Vishay | 8.007 | BOM |
| IRF9630 | P-Channel 200 V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB | Vishay | 7.978 | BOM |
| IRF734 | N-Channel 450 V 4.9A (Tc) 74W (Tc) Through Hole TO-220AB | Vishay | 7.979 | BOM |
| MAC212A8 | TRIAC Standard 600 V 12 A Through Hole TO-220AB | onsemi | 5.058 | BOM |
| SUP85N15-21-E3 | MOSFET N-CH 150V 85A TO220AB | VISHAY INTERTECHNOLOGY INC | 3.000 | BOM |
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