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TO-220AB
(insgesamt 642 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| 2SK2608 | Advanced transistor design for robust power managemen | Toshiba | 9.458 | BOM |
| BYV32E-200 | WeEn Semiconductors standard mark BYV32E-200 | Ween Semiconductors | 3.401 | BOM |
| BTB10-600BWRG | This product features a 50mA 600V 1 dual SCR TO-220AB TRIACs ROHS | Stmicroelectronics | 2.662 | BOM |
| ST13005 | Bipolar (BJT) Transistor NPN 400 V 4 A 75 W Through Hole TO-220 | STMicroelectronics, Inc | 3.349 | BOM |
| STPS20L45CT | Low voltage power Schottky rectifier | Stmicroelectronics | 2.083 | BOM |
| STPS30150CT | Dual center tap Schottky rectifier designed for high frequency switch mode power supply. | Stmicroelectronics | 2.990 | BOM |
| STPS40L15CT | 15V 40A Dual Schottky Diode, with a Common Cathode, encapsulated in a 3-Pin TO-220AB package | Stmicroelectronics | 3.911 | BOM |
| STPS30H100CT | Diode Array 1 Pair Common Cathode 100 V 15A Through Hole TO-220-3 | STMICROELECTRONICS | 7.631 | BOM |
| STPS30L30CT | STPS30L30CT is a rectifier diode of the Schottky type, designed to handle voltages up to 30V and currents up to 30A | Stmicroelectronics | 2.430 | BOM |
| AVS08CB | AVS08CB is a voltage-regulating device known as a 'Triacs Auto Voltage Switch' | Stmicroelectronics | 3.065 | BOM |
| FDP150N10 | Compact and reliable N-Channel MOSFET for application | ON Semiconductor, LLC | 3.601 | BOM |
| MUR1660CTG | Diode Array 1 Pair Common Cathode 600 V 8A Through Hole TO-220-3 | ON Semiconductor, LLC | 3.217 | BOM |
| IRFB3307ZPBF | Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube | Infineon Technologies Corporation | 2.888 | BOM |
| IRF3415PBF | Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB Tube | Infineon Technologies Corporation | 2.540 | BOM |
| IRF1010EPBF | N-Channel 60 V 84A (Tc) 200W (Tc) Through Hole TO-220AB | Infineon Technologies Corporation | 2.415 | BOM |
| IRF9Z34NPBF | Trans MOSFET P-CH Si 55V 19A 3-Pin(3+Tab) TO-220AB Tube | Infineon Technologies Corporation | 2.976 | BOM |
| 2SK2314 | N-channel MOSFET with a 100V voltage rating and a maximum continuous drain current of 27A, featuring a low on-resistance of 0.085 Ohms | TOSHIBA CORP | 8.879 | BOM |
| SPP70N10L | TO220-3 packaged N-channel MOSFET designed for high-current applications at voltages up to 100V | Infineon Technologies Corporation | 2.684 | BOM |
| IPP200N25N3G | Features advanced performance characteristics for improved power management | Infineon Technologies Corporation | 2.288 | BOM |
| IRF644N | Power MOSFET designed for 250V with 14A current handling | Vishay | 9.458 | BOM |
| SPP07N65C3 | High-Voltage N-Channel MOSFET with 7.3A Drain Current and CoolMOS C3 Technology | Infineon Technologies Corporation | 2.622 | BOM |
| SPP20N60CFD | High-voltage N-MOSFET transistor designed for unipolar operation, with a current rating of 13 | Infineon Technologies Corporation | 2.294 | BOM |
| IRFB23N20DPBF | High-power transistor for demanding applicatio | Infineon Technologies Corporation | 2.812 | BOM |
| ACST610-8T | ACST610-8T is an AC switch fortified against overvoltage, ensuring enhanced protection | Stmicroelectronics | 3.183 | BOM |
| SUP75N03-07 | High-power switching device for demanding applications, handling up to V and A of curren | Vishay | 9.458 | BOM |
| SIHP11N80E-GE3 | N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB | Vishay Siliconix | 9.386 | BOM |
| T1035H-6I | TRIAC Alternistor - Snubberless 600 V 10 A Through Hole TO-220AB Insulated | STMicroelectronics, Inc | 2.138 | BOM |
| ESAC25-02D | TO-220AB Diode Switching 200V 10A 3-Pin | EIC Semiconductor | 6.940 | BOM |
| SUP65P06-20 | TO-220AB package format for easy mounting and heat dissipation | Vishay | 9.557 | BOM |
| MTP12N10E | TO-220AB N-CHANNEL MOSFET, 12 A, 100 V, 0.16 ohm | Onsemi | 6.389 | BOM |
| IRLZ44PBF | N-Channel 60 V 50A (Tc) 150W (Tc) Through Hole TO-220AB | Vishay Semiconductors | 9.119 | BOM |
| IRFZ14PBF | TO-220AB-3 package type, featuring a low on-resistance of 200mΩ at 10V and 6A | Vishay | 9.851 | BOM |
| IRFBE20PBF | This product can handle 1.1A at 4V and 250uA at 10V | Vishay Siliconix | 5.583 | BOM |
| IRF9Z20 | Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Vishay | 7.030 | BOM |
| IRF9Z34 | Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.1 Ohm; Id -19A; | Vishay | 7.233 | BOM |
| IRF9Z24 | 3-pin transistor with 3+tab configuration for efficient heat dissipation | Vishay | 6.055 | BOM |
| IRF820A | N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB | Vishay | 8.532 | BOM |
| IRF9520 | MOSFET P-CH 100V 6.8A TO220AB | Vishay | 8.047 | BOM |
| IRF840A | IRF840A MOSFET: N-Type, 500V, 8A, TO-220AB Package with Tape and Reel | Vishay | 7.851 | BOM |
| IRFBF20 | MOSFET RECOMMENDED ALT 844-IRFBF20PBF | Vishay | 8.841 | BOM |
| IRFBC30A | 844-IRFBC30APBF Replacement: IRFBC30A, a viable MOSFET choice as an alternative | Vishay | 9.770 | BOM |
| IRF840LC | N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB | Vishay | 5.751 | BOM |
| IRFB9N65A | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay | 5.348 | BOM |
| IRFBE20 | MOSFET RECOMMENDED ALT 844-IRFBE20PBF | Vishay | 7.141 | BOM |
| IRFB11N50A | IRFB11N50A, a MOSFET, is detailed alongside its recommended alternative, 844-IRFB11N50APBF | Vishay | 7.950 | BOM |
| IRF9610 | MOSFET RECOMMENDED ALT 844-IRF9610PBF | Vishay | 8.424 | BOM |
| IRFZ44R | MOSFET RECOMMENDED ALT 844-IRFZ44RPBF | Vishay | 6.916 | BOM |
| LM317MT | ROHS Compliant Regulator | Onsemi | 6.190 | BOM |
| TS820-600T | Advanced Temperature Control for Perfect Drinking Experience | Stmicroelectronics | 9.395 | BOM |
| T405-600T | Tube Packaged Thyristor TRIAC 600V 31A with TO-220AB 3-Pin(3+Tab) - Rail/Tube | Stmicroelectronics | 6.218 | BOM |
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