MTP12N10E

MTP12N10E Allgemeine Beschreibung

The MTP12N10E power MOSFET is a versatile component that is ideal for a wide range of high-speed switching applications. With a drain-source voltage rating of 100V and a continuous drain current rating of 12A, this N-channel device offers reliable performance in power supplies, lighting, and motor control systems. Its low on-resistance of 0.18 ohms ensures efficient power conversion with minimal power dissipation, making it a cost-effective solution for various electronic designs

Funktionen

• High efficiency power conversion
• Low loss power transmission
• Fast switching frequency support
• Rapid recovery times guaranteed
• Safe operating voltage ensured
• Long lifespan component design

Anwendung

• Automation
• Robotics
• Power control

Spezifikationen

Parameter	Wert	Parameter	Wert
ECCN (US)	EAR99	Part Status	Obsolete
HTS	8541.29.00.95	SVHC	Yes
SVHC Exceeds Threshold	Yes	Automotive	No
PPAP	No	Category	Power MOSFET
Material	Si	Configuration	Single
Channel Mode	Enhancement	Channel Type	N
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20	Maximum Continuous Drain Current (A)	12
Maximum Drain Source Resistance (MOhm)	160@10V	Typical Gate Charge @ Vgs (nC)	18@10V
Typical Gate Charge @ 10V (nC)	18	Typical Input Capacitance @ Vds (pF)	600@25V
Maximum Power Dissipation (mW)	79000	Typical Fall Time (ns)	30
Typical Rise Time (ns)	64	Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	10	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175	Packaging	Rail
Mounting	Through Hole	Package Height	9.28(Max)
Package Width	4.82(Max)	Package Length	10.28(Max)
PCB changed	3	Tab	Tab
Standard Package Name	TO	Supplier Package	TO-220AB
Pin Count	3