Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Für weitere Informationen werfen Sie bitte einen Blick auf unsere Datenschutzrichtlinie.
TO-247-3
(insgesamt 1804 Teile)Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
---|---|---|---|---|
IXYH40N120B3D1 | GenX3™ IGBT Transistor, 1.2kV, 40A, 480W, TO247-3 | IXYS | 5.642 | BOM |
KSQ15A04 | Product Description: KSQ15A04 | KYOCERA AVX | 9.458 | BOM |
KSF30A40B | Reliable and robust switching solution for industrial control system | KYOCERA AVX | 9.458 | BOM |
KCH30A20 | Schottky diode with a voltage rating of 200V and a current rating of 30A in a TO-247 package | KYOCERA AVX | 9.548 | BOM |
KCF25A20 | The KCF25A20: A 3-pin TO-247 Diode Switching Component, rated at 200V and 25A | Kyocera Corporation | 8.655 | BOM |
IRGP4660DPBF | Infineon's IRGP4660DPBF IGBT is designed for 60 amps and 600 volts, packaged in the TO-247AC with 3 pins | International Rectifier | 5.377 | BOM |
IXYH40N90C3D1 | IXYH40N90C3D1 Transistor: 900V, 90A, TO-247AD | IXYS | 6.148 | BOM |
IRGP4640DPBF | Robust and reliable for high-reliability designs | Infineon Technologies | 9.345 | BOM |
GA50JT12-247 | 1200V/100A JFET with standard specifications | GeneSiC Semiconductor | 8.253 | BOM |
IXDH30N120D1 | N-Channel IGBT Chip for Transistor 1200V 60A 300W 3-Pin(3+Tab) | IXYS | 9.458 | BOM |
IRG4PH40UDPBF | This product is a combination of IGBT and anti-parallel diode in a single package | Infineon Technologies | 5.120 | BOM |
IXGH16N170A | Contact us for further details | IXYS | 9.007 | BOM |
APT30GT60BRG | Insulated Gate Bipolar Transistor - NPT Standard Speed APT30GT60BRG | Microchip Technology | 6.982 | BOM |
IRG4PH30KPBF | N-Channel IGBT Chip with 1200V Voltage Rating, 20A Current Rating, and 100W Power Rating in TO-247AC Package | Infineon | 9.458 | BOM |
SF3006PT | Rugged and reliable component suitable for harsh environment | Taiwan Semiconductor Corporation | 6.392 | BOM |
IXZR08N120 | 1200V N Channel ZMOS Switch MOSFET RF MOSFET Transistors ISO PLUS 247 08A | IXYS-RF | 7.108 | BOM |
FGH50N6S2 | Powerful FGHNIGBT chip for high-reliability applications | Fairchild Semiconductor | 5.255 | BOM |
KSF60F60B | Rectifiers for fast recovery with 600V and 60A | KYOCERA AVX | 9.458 | BOM |
VS-60APH03-N3 | Rectifier Diode, 1 Phase, 1 Element, 60A, 300V VRRM, Silicon, TO-247AC, Halogen-Free and RoHS Compliant, Plastic Package-3 | Vishay General Semiconductor - Diodes Division | 7.429 | BOM |
VS-80APS12-M3 | 80A 3-Pin Diode Switching Tube | Vishay General Semiconductor - Diodes Division | 6.506 | BOM |
IDW75D65D1XKSA1 | Robust IGBT solution for industrial power applications | Infineon Technologies | 5.269 | BOM |
IXFH220N20X3 | Efficient energy management tool for renewable energy systems and smart grids | IXYS | 5.049 | BOM |
IXTH220N20X4 | IXTH220N20X4: MOSFET Device for High Power Applications | IXYS | 8.327 | BOM |
IXFH150N30X3 | IXFH150N30X3 is a high-performance N-channel MOSFET with ultra junction technology | IXYS | 9.458 | BOM |
IXFH100N30X3 | TO247-3 packaged N-MOSFET transistor | IXYS | 9.458 | BOM |
MSC035SMA070B | This MOSFET has a low on-resistance of 44mΩ at 30A and a power dissipation of 283W at 20V | Microchip Technology | 8.896 | BOM |
MSC050SDA120B | Diode 1200 V 109A Through Hole TO-247-3 | MICROCHIP TECHNOLOGY INC | 6.257 | BOM |
MSC035SMA170B | N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-3 | Microchip Technology | 7.733 | BOM |
MSC025SMA120B | MSC025SMA120B: A MOSFET featuring Silicon Carbide (SiC) technology | Microchip | 6.576 | BOM |
MSC080SMA120B | Silicon Carbide N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 9.268 | BOM |
MSC015SMA070B | SILICON CARBIDE MOSFETs, represented by product MSC015SMA070B, offer advanced functionality and reliability in various electronic systems | Microchip Technology | 6.055 | BOM |
IXTH80N65X2 | Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 | IXYS | 9.458 | BOM |
IXTH34N65X2 | IXTH34N65X2 Power Field-Effect Transistor | IXYS | 9.941 | BOM |
IXTH48N65X2 | Learn more about the Power Field-Effect Transistor IXTH48N65X2 | IXYS | 9.458 | BOM |
IXFX120N65X2 | Robust design for heavy-duty power control system | IXYS | 9.458 | BOM |
IXFX120N20 | MOSFET with a voltage rating of 200V and a current rating of 120A | Littelfuse | 5.273 | BOM |
IXFH34N65X2 | Reliable and A operation in through-hole packag | IXYS | 7.140 | BOM |
IXFH12N90 | N-Channel Silicon Metal-oxide Semiconductor FET | Littelfuse | 8.368 | BOM |
TIP141G | Bipolar (BJT) Transistor NPN - Darlington 80 V 10 A 125 W Through Hole TO-247-3 | onsemi | 6.797 | BOM |
TIP140G | Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 125 W Through Hole TO-247-3 | onsemi | 8.761 | BOM |
STW21NM50N | Three-pin MOSFET with tab included for easy mounting | Stmicroelectronics | 8.954 | BOM |
STW13NK80Z | 00V Si technology | Stmicroelectronics | 9.458 | BOM |
STW15NB50 | High-Voltage N-Channel MOSFET Transistor in TO-247AA Package | Stmicroelectronics | 8.473 | BOM |
STW60NM50N | MOSFET N-channel with a voltage rating of 500V, a low resistance of 0 | Stmicroelectronics | 8.541 | BOM |
STW9NB80 | 800 Volt N-Channel MOSFET with 9 Amp capability | Stmicroelectronics | 9.627 | BOM |
STW20NA50 | TO-247 Package N-Channel Power MOSFET with 3 Pins | Stmicroelectronics | 7.290 | BOM |
SCH2080KEC | Compact power device suitable for DC-DC converters, motor drives, and other high-power systems | Rohm Semiconductor | 7.979 | BOM |
NTD5867NL-1G | Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE | onsemi | 9.458 | BOM |
NTD4963N-35G | Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK | onsemi | 9.458 | BOM |
MTW32N20E | MTW32N20E stands out as a high-performance Power MOSFET suitable for demanding applications with its single N-channel configuration | Onsemi | 7.849 | BOM |
Anderes Paket