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TO-251
(insgesamt 24 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| 2SC5707-E | Bipolar (BJT) Transistor NPN 50 V 8 A 330MHz 1 W Through Hole TP | ON Semiconductor, LLC | 2.072 | BOM |
| SPU02N60C3 | High-power N-channel transistor for industrial applications | INFINEON | 1.505 | BOM |
| MJD45H11-1G | Bipolar Power DPAK PNP 8A 80V; Package: DPAK-3 SINGLE GAUGE; No of Pins: 4; Container: Rail; Qty per Container: 75 | ON Semiconductor, LLC | 2.500 | BOM |
| RURD4120 | Avalanche-rated silicon diode with current capacit | onsemi | 9.727 | BOM |
| S6004VS2 | SCR 600 V 4 A Sensitive Gate Through Hole TO-251 (V-Pak/I-Pak) | Littelfuse | 6.442 | BOM |
| RURD660 | 6A 600V Diodes: RURD660 - Reliable Component for Various Electronic Systems | Onsemi | 8.534 | BOM |
| FQU11P06 | QFET® P-Channel Power MOSFET, -60 V, -9.4 A, 185 mΩ, IPAK | onsemi | 5.418 | BOM |
| 2SA1385-AZ | Compact and versatile MP-package for ease of integratio | Renesas Electronics | 9.458 | BOM |
| IRFU320PBF | N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA | IR | 9.458 | BOM |
| FLC01-200H | Fire Lighting Circuit TO-251 (IPAK) | STMicroelectronics | 9.458 | BOM |
| RHRD660 | Silicon Rectifier Diode rated for Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM) | onsemi | 9.458 | BOM |
| RHRD460 | Intersil Diode RHRD460 | INTERSIL CORP | 7.086 | BOM |
| RHRD4120 | 4A 1200V Rectifiers | onsemi | 9.458 | BOM |
| IGU04N60T | 3-pin TO-251 package | infineon | 9.859 | BOM |
| 2SC4331-AZ | Bipolar Power Transistors | Renesas Electronics | 9.458 | BOM |
| D1NK60-5060 | Schottky Diodes & Rectifiers Fast Recovery Diode Axial | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 8.414 | BOM |
| 2SC5706 | Reliable power amplifier for industrial control application | Onsemi | 6.700 | BOM |
| VND10N06-1 | Compact tube module with advanced current limiting feature | Stmicroelectronics | 2.126 | BOM |
| 2SC3074 | High-power switching and driver application | Toshiba | 2.661 | BOM |
| VND14NV04-1-E | E3 6.5mm 25μs Response Time Power Distribution Switch VND14NV04-1 | Stmicroelectronics | 5.202 | BOM |
| SUU50N03-07 | MOSFET 30V 50A | Vishay | 9.458 | BOM |
| RM5N800IP | N-Channel 800 V 5A (Tc) 81W (Tc) Through Hole TO-251 | Rectron | 7.624 | BOM |
| RM4N650IP | N-Channel 650 V 4A (Tc) 46W (Tc) Through Hole TO-251 | Rectron | 5.813 | BOM |
| RM2N650IP | N-Channel 650 V 2A (Tc) 23W (Tc) Through Hole TO-251 | Rectron | 5.125 | BOM |
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