IRLL014NTRPBF

IRLL014NTRPBF Allgemeine Beschreibung

The Infineon IRLL014NTRPBF is a high-performance N Channel MOSFET transistor that offers excellent power management capabilities for a wide range of electronic applications. With a Drain Source Voltage of 55V and a Continuous Drain Current of 2A, this transistor is capable of handling medium to high power loads with ease. Its Surface Mount mounting style allows for easy integration into circuit boards, while the Rds(On) Test Voltage of 10V ensures minimal power loss and improved efficiency. The Gate Source Threshold Voltage Max of 2V provides precise control over the transistor's switching behavior, making it ideal for applications that require accurate power management. With a Power Dissipation rating of 1W and a compact 4-pin configuration, the IRLL014NTRPBF is a reliable and efficient solution for power management needs in various electronic devices. Furthermore, this product is RoHS compliant, ensuring its compliance with international environmental regulations

Funktionen

• Rugged Design for Harsh Environments
• Wide Operating Temperature Range
• High Surge Current Capability
• Safe Operating Area Diagram
• Thermal Shutdown Protection
• Low Gate Charge for Reduced Power

Anwendung

• Sensor solutions
• Motor tech
• Solar power

Spezifikationen

Parameter	Wert	Parameter	Wert
Series	HEXFET®	Product Status	Active
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	140mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 25 V
Power Dissipation (Max)	1W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA