Infineon IRLML6401TRPBF

Teilpunkte

• The IRLML6401TRPBF is a power MOSFET transistor chip commonly used in low voltage applications due to its high efficiency and low on-resistance. It is designed for use in battery-powered devices, portable electronics, and other applications where power consumption is a concern. The chip is compact, reliable, and provides high performance in a small package.

• Equivalent

  Some equivalent products of the IRLML6401TRPBF chip are Infineon BSS138, Diodes Inc. PZTA42T1G, ON Semiconductor NCV8663D. These are all N-channel MOSFET transistors with similar specifications and applications as the IRLML6401TRPBF chip.

• Features

  1. N-Channel MOSFET transistor 2. Maximum continuous drain current of 1.4A 3. Low on-resistance of 60mΩ 4. Low gate threshold voltage of 1V 5. TO-236-3/SOT-23 package 6. Fast switching speed 7. Ideal for power management applications in portable devices

• Pinout

  The IRLML6401TRPBF is a MOSFET transistor with 3 pins: Gate, Drain, and Source. It has a pin count of 3 and is typically used for switching applications in low voltage circuits. The Gate pin controls the flow of current between the Drain and Source pins.

• Manufacturer

  The IRLML6401TRPBF is manufactured by Infineon Technologies, a multinational company specializing in semiconductor solutions. Infineon is a leading supplier of power semiconductors, sensors, and security chips for automotive, industrial, and consumer electronics applications. They are known for their high-quality products and innovation in the semiconductor industry.

• Application Field

  The IRLML6401TRPBF is commonly used in portable devices, battery-powered applications, and other low voltage applications where space and power efficiency are critical. It is often found in consumer electronics, automotive systems, and portable medical devices due to its small size, low voltage operation, and high efficiency characteristics.

• Package

  The IRLML6401TRPBF chip comes in a surface-mount package type called SOT-23. It is a MOSFET transistor in a single configuration with an N-channel polarity. The size of the package is approximately 2.9 mm x 1.3 mm x 1.0 mm, and it is suitable for applications requiring high power efficiency in a compact form factor.