MJ11030

Teilpunkte

• The MJ11030 is a high-power NPN bipolar junction transistor (BJT) designed for power amplifier and switching applications. It can handle high current and voltage levels, making it suitable for power control in various electronic devices and systems. With its robust construction and high reliability, the MJ11030 is commonly used in industrial and automotive applications where efficient power handling is crucial.

• Equivalent

  The MJ11030 chip's equivalents include the 2N6547, BUW51A, and BUW51B. These alternatives offer similar performance characteristics and can be used interchangeably in many applications requiring a power transistor with comparable specifications.

• Features

  The MJ11030 is a high-power NPN bipolar junction transistor designed for high-voltage, high-speed switching applications. It features a collector-emitter voltage rating of 120V, a collector current of 30A, and a power dissipation of 200W. The transistor is housed in a TO-3 package, providing robustness and efficient heat dissipation.

• Pinout

  The MJ11030 is a power transistor with a TO-3 package, typically used in high-power applications. It has three pins: Base, Collector, and Emitter. The Base pin controls the flow of current between the Collector and Emitter. It's commonly employed in audio amplifiers and power supplies.

• Manufacturer

  The MJ11030 is manufactured by ON Semiconductor, an American semiconductor supplier headquartered in Phoenix, Arizona. ON Semiconductor produces a wide range of power management, analog, logic, discrete, and custom devices for various applications, including automotive, industrial, and consumer electronics.

• Application Field

  The MJ11030 is a high-power NPN bipolar junction transistor (BJT) commonly used in applications requiring high voltage and high current. It finds use in power supplies, motor control, audio amplifiers, and high-power switching circuits due to its capability to handle large currents and voltages.

• Package

  The MJ11030 chip is a TO-3 package type power transistor, with dimensions of 29.5mm x 22.5mm x 10.0mm. It is a through-hole component with a maximum power dissipation of 200 watts and a collector current of 80 amperes.