NT5CC256M16DP-DI

NT5CC256M16DP-DI Allgemeine Beschreibung

The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

Funktionen

• Economical, high-density memory module solution
• Fast data transfer speeds up to 933MHz
• Suitable for industrial and automotive applications
• Low power consumption for energy efficiency
• Automatic temperature range: -40°C to 125°C

Anwendung

Multiple industries

Spezifikationen

Parameter	Wert	Parameter	Wert
ECCN (US)	EAR99	Part Status	Obsolete
HTS	8542.32.00.36	DRAM Type	DDR3L SDRAM
Chip Density (bit)	4G	Organization	256Mx16
Number of Internal Banks	8	Number of Words per Bank	32M
Number of Bits/Word (bit)	16	Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	800	Maximum Access Time (ns)	20
Address Bus Width (bit)	18	Process Technology	CMOS
Interface Type	SSTL_135	Minimum Operating Supply Voltage (V)	1.283
Maximum Operating Supply Voltage (V)	1.45	Operating Current (mA)	199
Minimum Operating Temperature (°C)	0	Maximum Operating Temperature (°C)	95
Supplier Temperature Grade	Commercial	Number of I/O Lines (bit)	16
Mounting	Surface Mount	Package Height	1
Package Width	13	Package Length	8
PCB changed	96	Standard Package Name	BGA
Supplier Package	VFBGA	Pin Count	96
Lead Shape	Ball