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Infineon SPW35N60C3
N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Marken: Infineon Technologies Corporation
Herstellerteil #: SPW35N60C3
Datenblatt: SPW35N60C3 Datasheet (PDF)
Paket/Gehäuse: TO-247
RoHS-Status:
Lagerzustand: 3.297 Stück, Neues Original
Produktart: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Alle Preise sind in USD
| Menge | Einzelpreis | Ext. Preis |
|---|---|---|
| 1 | $8,279 | $8,279 |
| 10 | $7,315 | $73,150 |
| 30 | $6,727 | $201,810 |
| 100 | $5,416 | $541,600 |
Auf Lager: 3.297 Stck
SPW35N60C3 Allgemeine Beschreibung
The SPW35N60C3 is a 600V CoolMOS™ Power MOSFET developed by Infineon Technologies. It is part of the Superjunction MOSFET family and is designed for high power applications in consumer electronics, industrial equipment, and automotive systems.Key specifications of the SPW35N60C3 include a drain-source voltage rating of 600V, a continuous drain current of 35A, and a low on-resistance of 0.065 ohms. This MOSFET also features a fast switching speed and a high avalanche energy capability, making it ideal for applications that require high efficiency and reliability.The SPW35N60C3 is housed in a TO-247 package, which provides a good thermal performance and high power density. It also has a wide operating temperature range of -55°C to 150°C, allowing it to be used in various environments.
Funktionen
- Maximum Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 35A
- Low On-Resistance (RDS(on)): 0.035 ohms
- Fast Switching Characteristics
- Avalanche Energy Rated
Anwendung
- STW35N60M2 by STMicroelectronics
- IRFP4768PBF by Infineon Technologies
- IXFH35N60Q by IXYS Corporation
- RJK0355DPA by Renesas Electronics
Spezifikationen
| Parameter | Wert | Parameter | Wert |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 34.6 A |
| Rds On - Drain-Source Resistance: | 100 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V | Qg - Gate Charge: | 150 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 313 W | Channel Mode: | Enhancement |
| Tradename: | CoolMOS | Series: | CoolMOS C3 |
| Packaging: | Tube | Brand: | Infineon Technologies |
| Configuration: | Single | Fall Time: | 10 ns |
| Forward Transconductance - Min: | 36 S | Height: | 21.1 mm |
| Length: | 16.13 mm | Product Type: | MOSFET |
| Rise Time: | 5 ns | Factory Pack Quantity: | 240 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 70 ns | Typical Turn-On Delay Time: | 10 ns |
| Width: | 5.21 mm | Part # Aliases: | SPW35N6C3XK SP000014970 SPW35N60C3FKSA1 |
| Unit Weight: | 0.211644 oz |
Versand
| Versandart | Versandgebühr | Vorlaufzeit | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
| Zahlungsbedingungen | Handgebühr | |
|---|---|---|
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
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Paypal | 4,0 % Servicegebühr wird berechnet. |
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Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
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Western Union | charge US.00 banking fee. |
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Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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SPW35N60C3 is a power MOSFET transistor chip commonly used in electronic devices for efficient switching and power management. It has a maximum voltage rating of 600V and a continuous current rating of 35A. This chip is designed to handle high power applications with low on-state resistance and fast switching speeds.
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Equivalent
The equivalent products of SPW35N60C3 chip are IGBTs such as 2SP0115T2B0A, 2SP0115T2D0A, and 2SP0115T2A0A. Other options may include STGWA60H65DF, CM400HA-24H, and DSEI30-06A. Make sure to check the specifications and compatibility before purchasing as they may have different characteristics and ratings. -
Features
Some features of the SPW35N60C3 include a power MOSFET, a high switching performance, low on-resistance, and a reduced gate charge. It also has a gate threshold voltage of 2.5V and a continuous drain current of 35A. The SPW35N60C3 is suitable for a variety of applications requiring high power and efficiency. -
Pinout
The SPW35N60C3 is a power MOSFET with a TO-247 package and a pin count of 3. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. It is used for high current and high voltage applications such as power supplies and motor control. -
Manufacturer
The SPW35N60C3 is manufactured by STMicroelectronics, which is a multinational semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in developing and producing a wide range of semiconductor technologies and solutions for a variety of industries including automotive, industrial, consumer, and communications. -
Application Field
The SPW35N60C3 is a power transistor specifically designed for high-power applications such as industrial power supplies, motor control systems, and automotive applications. It can also be used in renewable energy systems, welding equipment, and various other high-power electronics where efficient power switching is required. -
Package
The SPW35N60C3 chip is housed in a TO-247 package, featuring a through-hole mounting type. It has a standard form factor and a size of 10.5mm x 15.6mm x 4.7mm.
Datenblatt PDF
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