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FBGA-165
(insgesamt 267 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| CY7C1512KV18-300BZXC | With a voltage range of 1.7V to 1.9V, the CY7C1512KV18-300BZXC is a high-capacity 72Mbit SRAM packaged in a FBGA-165 form factor of 13x15 | Infineon | 9.458 | BOM |
| CY7C1470V25-200BZI | High-density synchronous SRAM chip for fast data processin | Infineon Technologies Corporation | 3.615 | BOM |
| CY7C1250KV18-400BZXC | Ultra-Fast Access Speed: Featuring a blazing fast access time of 0 | Infineon Technologies Corporation | 2.469 | BOM |
| GS8182Q36BD-200I | SRAM 1.8 or 1.5V 512K x 36 18M | GSI | 6.873 | BOM |
| CY7C1525KV18-300BZC | SRAM Chip Sync Dual 1.8V 72M-bit 8M x 9-bit 0.45ns 165-Pin FBGA Tray | Infineon Technologies Corporation | 3.061 | BOM |
| CY7C1315KV18-250BZI | SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 165-FBGA (13x15) | Infineon Technologies Corporation | 3.408 | BOM |
| CY7C1373D-133BZI | Ideal for high-performance computing applications | Infineon | 9.458 | BOM |
| CY7C15632KV18-400BZXI | High-speed SRAM chip organized as 4Mx18 | Infineon | 9.458 | BOM |
| IS61NLP102436B-200B3LI | 256Mb of reliable storage ideal for industrial control systems, automotive electronics | INTEGRATED SILICON SOLUTION INC | 6.115 | BOM |
| IS61DDB21M18C-250M3L | Synchronous SRAM with DDR II technology | Issi | 2.804 | BOM |
| IS61VPS204836B-250B3LI-TR | Fast and reliable SRAM memory for embedded system | Issi | 2.487 | BOM |
| IS61VPS204836B-250B3L-TR | Compact TFBGA-package ideal for space-constrained designs | Issi | 7.777 | BOM |
| IS61NLP204818B-250B3L-TR | Advanced memory chip for modern computing system | Issi | 2.891 | BOM |
| CY14B116S-BZ35XIT | Pin FBGA package for compact and reliable installatio | Infineon | 6.037 | BOM |
| IS61NLP51236B-200B3LI-TR | Technical Specifications: With a clock speed of up to Hz and low power consumption | Issi | 3.128 | BOM |
| IS61DDP2B451236A-400M3L | Reliable Storage Solution for Embedded Systems ( character | Issi | 5.011 | BOM |
| IS61DDB41M18A-250M3L | High-density memory solution for space-constrained application | Issi | 3.358 | BOM |
| IS61DDP2B21M36A-400M3L | High-density storage for electronic device | Issi | 4.280 | BOM |
| IS61DDPB451236A-400M3L | Low-power FBGA-package with operating voltage range of V~V suitable for various industries | Issi | 2.461 | BOM |
| IS61LPS51236A-200B3LI | Fast and reliable memory solution for high-density designs | Issi | 7.177 | BOM |
| IS61DDPB251236A-400M3L | High-capacity memory solution for industrial control system | Issi | 5.641 | BOM |
| IS61DDB451236A-250M3L | Advanced 18Mbit FBGA package for efficient use of board space | Issi | 2.863 | BOM |
| IS61DDB42M18A-250M3L | Fast and efficient Mb DDR II Synchronous RAM | Issi | 5.929 | BOM |
| IS61DDB251236A-250M3L | 18Mb capacity, 2.5V supply voltage, and industrial-grade reliability make it suitable for a wide range of industries | Issi | 5.126 | BOM |
| IS61DDPB41M36A-400M3L | Single-chip solution for synchronous memory requirements | Issi | 5.587 | BOM |
| IS61DDB42M36A-300M3L | High-speed memory chip for fast processing and data storage | Issi | 7.375 | BOM |
| IS61DDPB42M36A-400M3L | With a voltage range of 1.71V~1.89V, this IS61DDPB42M36A-400M3L offers reliable performance | Issi | 3.893 | BOM |
| IS61QDPB41M36A-400M3L | Ultra-fast read latency SRAM ideal for data-intensive systems and applications with high processing requirement | Issi | 5.067 | BOM |
| IS61QDB42M36A-300M3L | High-Speed M-bit SRAM Chip for Sync Applicatio | Issi | 2.786 | BOM |
| IS61NLP25618A-200B3LI | Dual-port synchronous RAM for demanding digital design and engineering need | Issi | 4.067 | BOM |
| IS61QDP2B24M18A-333M3L | Quad-ported memory module with fast read laten | Issi | 5.935 | BOM |
| IS61QDB41M18A-250M3L | Robust and reliable Mbit SRAM for high-reliability industries such as aerospace and defense | Issi | 6.392 | BOM |
| IS61QDB22M18A-250M3L | Designed for reliability and ease of use, this Quad Sync SRAM offers 36Mb capacity for complex system integration | Issi | 5.954 | BOM |
| IS61VPS51236A-250B3L | High-performance SRAM chip for demanding application | Issi | 6.662 | BOM |
| IS61NLP102418-200B3LI-TR | Industrial-grade memory solution for demanding applications, featuring high-speed data transfer, low power consumption, and robust reliabilit | Issi | 7.817 | BOM |
| IS61QDP2B22M18A-333M3L | Advanced synchronous SRAM module with fast read latency and high bandwidt | Issi | 3.120 | BOM |
| IS61QDP2B21M18A-333M3L | Low-power operation for reduced heat generatio | Issi | 3.171 | BOM |
| IS61QDP2B22M36A-333M3L | Enhanced performance and reliability with synchronous architectur | Issi | 2.607 | BOM |
| IS61QDPB21M36A-333M3L | Low-power ISQDPBMA- SRAM ideal for mobile devices and embedded systems | Issi | 6.815 | BOM |
| IS61QDP2B44M18A-400M3L | Wide operating temperature range of 1.71V~1.89V suitable for diverse industrial scenarios | Issi | 4.812 | BOM |
| IS61QDB41M36A-250M3L | Industrial-grade memory for demanding industrial automati | Issi | 6.932 | BOM |
| IS61QDB251236A-250M3L | High-speed SRAM module for demanding computing applications | Issi | 7.418 | BOM |
| IS61QDPB451236A-400M3LI | Enhance your system's functionality and speed with this robust SRAM module | Issi | 6.091 | BOM |
| IS61NLP51236-200B3LI | Quad M-bit memory with x bits, designed for high-speed processing and low latency | Issi | 4.870 | BOM |
| CY7C1470V25-200BZC | Low-voltage CMOS x Static RAM with NoBL and PLLL for improved power efficienc | Infineon | 2.263 | BOM |
| CY7C1460AV25-167BZC | Satisfy your memory requirements with this RoHS-compliant, 165-pin LBGA package | Infineon | 2.516 | BOM |
| CY7C1413KV18-250BZCT | Ultra-high-speed, low-power memory solution for high-performance applications | Infineon | 7.373 | BOM |
| CY7C1415KV18-300BZI | Fast and reliable storage for data-intensive processing | Infineon Technologies Ag | 4.835 | BOM |
| CY7C1381C-100BZI | Compact PBGA165 package with 8.5ns access time for space-saving design | Infineon Technologies Ag | 2.596 | BOM |
| CY7C1315BV18-250BZC | Advanced logic RAM for high-performance system | Infineon Technologies Ag | 3.113 | BOM |
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