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PG-TDSON-8
(insgesamt 272 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| IAUC80N04S6L032 | High power handling capability of 50W | Infineon Technologies Corporation | 3.678 | BOM |
| IAUC100N04S6N022 | MOSFET with 20V and 40V ratings | Infineon Technologies Corporation | 3.317 | BOM |
| IAUC100N04S6L025 | MOSFET component suitable for use with voltage levels ranging from 20V to 40V | Infineon Technologies Corporation | 2.413 | BOM |
| IAUC100N04S6L020 | IAUC100N04S6L020 MOSFETs ROHS TDSON-8(6.2x5.2) | Infineon Technologies Corporation | 2.989 | BOM |
| IAUC100N04S6L014 | IAUC100N04S6L014 - MOSFET with 20V to 40V range | Infineon Technologies Corporation | 2.874 | BOM |
| BSC067N06LS3G | The BSC067N06LS3 G MOSFET is designed for N-channel operation with a maximum voltage rating of 60V and a current capacity of 50A | Infineon Technologies Corporation | 2.122 | BOM |
| BSZ0902NSI | 30 V Voltage Rating | Infineon Technologies Corporation | 2.850 | BOM |
| BSZ0901NSI | High-power N-channel transistor suitable for high-voltage DC-DC converters and motor control application | Infineon Technologies Corporation | 3.696 | BOM |
| BSZ0901NS | OptiMOS MOSFET N-Ch 30V 40A TDSON-8 | Infineon Technologies Corporation | 2.620 | BOM |
| BSC12DN20NS3G | N-channel power MOSFET with a voltage rating of 200V and a maximum current capacity of 11.3A, encapsulated in an 8-pin TDSON EP package | Infineon Technologies Corporation | 3.942 | BOM |
| BSC0902NSI | 30V 23A power transistor | Infineon Technologies Corporation | 3.892 | BOM |
| BSZ0904NSI | N-Channel 30V 18A Automotive Transistor MOSFET 8-Pin TSDSON EP Tape and Reel | Infineon Technologies Corporation | 2.396 | BOM |
| BSC13DN30NSFDATMA1 | This component is a N-channel MOSFET transistor with a voltage rating of 300V and a current capacity of 16A | Infineon Technologies Corporation | 3.183 | BOM |
| BSC160N15NS5ATMA1 | N-Channel 150V MOSFET designed for high-power applications, capable of handling up to 36A of current | Infineon Technologies Corporation | 2.101 | BOM |
| ISC030N10NM6ATMA1 | High-power N-channel MOSFET for demanding applications" | Infineon Technologies Corporation | 3.095 | BOM |
| BSC034N10LS5ATMA1 | This MOSFET transistor has an N-channel design | Infineon Technologies Corporation | 2.321 | BOM |
| BSC096N10LS5ATMA1 | Ideal for applications requiring high power handling and low voltage operation | Infineon Technologies Corporation | 2.896 | BOM |
| ISC230N10NM6ATMA1 | ISC230N10NM6ATMA1 is a TRENCH MOSFET optimized for high voltage operation | Infineon Technologies Corporation | 2.960 | BOM |
| ISC027N10NM6ATMA1 | ISC027N10NM6ATMA1 - MOSFET Utilizing Trench Structure for Voltage Levels >=100V | Infineon Technologies Corporation | 2.797 | BOM |
| ISC011N06LM5ATMA1 | Power transistor with N-channel design capable of handling up to 60V and 37A, housed in an 8-pin TDSON EP package for easy installation | Infineon Technologies Corporation | 2.842 | BOM |
| BSC016N06NSTATMA1 | Surface mount MOSFET transistor with enhanced package and thermal resistance | Infineon Technologies Corporation | 3.823 | BOM |
| BSC065N06LS5ATMA1 | BSC065N06LS5ATMA1, a MOSFET renowned for its differentiated features, offers unparalleled performance | Infineon Technologies Corporation | 2.769 | BOM |
| BSC014N06NSTATMA1 | The N-Channel BSC014N06NSTATMA1 is an OptiMOS Power-Transistor with a 60V rating, 257A current capacity, and 1 | Infineon Technologies Corporation | 2.053 | BOM |
| BSC094N06LS5ATMA1 | MOSFET transistor for electronic circuits, packaged in tape form | Infineon Technologies Corporation | 2.595 | BOM |
| BSC014N04LSIATMA1 | Power MOSFET for N-channel operation with a 40V voltage rating, capable of handling currents up to 100A, featuring a low on-resistance of 0 | Infineon Technologies Corporation | 3.982 | BOM |
| BSC022N04LS6ATMA1 | Transistor MOSFET N-channel with 40V and 27A | Infineon Technologies Corporation | 2.671 | BOM |
| BSC0504NSIATMA1 | Precise current regulation with low voltage drop for energy-efficient designs | Infineon Technologies Corporation | 2.940 | BOM |
| BSC026NE2LS5ATMA1 | Low on-resistance power MOSFET | Infineon Technologies Corporation | 2.139 | BOM |
| BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1 MOSFET N-type 25 volts 100 amps TDSON-8 | Infineon Technologies Corporation | 2.416 | BOM |
| BSC009NE2LS5ATMA1 | 8-pin TDSON EP packaged N-channel MOSFET with 25V VDS and 41A IDS | Infineon Technologies Corporation | 2.696 | BOM |
| BSC009NE2LS5IATMA1 | Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.028 | BOM |
| BSC050NE2LSATMA1 | OptiMOS™ technology for optimized performance | Infineon Technologies Corporation | 3.840 | BOM |
| ISC0803NLSATMA1 | 8TDSON MOSFET with N-channel configuration, 100V maximum voltage and 8.8A continuous/37A pulsed current ratings | Infineon Technologies Corporation | 3.819 | BOM |
| BSC0802LSATMA1 | This MOSFET model BSC0802LSATMA1 features an N-channel design, supporting up to 100V of voltage and 100A of current flow, packaged in PG-TDSON | Infineon Technologies Corporation | 2.220 | BOM |
| BSC0702LSATMA1 | Field-effect transistor for high-power applications | Infineon Technologies Corporation | 2.379 | BOM |
| BSC0703LSATMA1 | BSC0703LSATMA1 Power MOSFET Transistor | Infineon Technologies Corporation | 3.608 | BOM |
| BSC190N12NS3GATMA1 | Energy-efficient MOSFET suitable for ROHS compliant applications | Infineon Technologies Corporation | 3.009 | BOM |
| BSC077N12NS3GATMA1 | BSC077N12NS3GATMA1 is an N-channel power MOSFET designed for single-channel applications, offering a voltage rating of 120 volts | Infineon Technologies Corporation | 2.413 | BOM |
| BSC060N10NS3GATMA1 | OptiMOS 3 technology for optimized performance | Infineon Technologies Corporation | 2.159 | BOM |
| BSC057N08NS3GATMA1 | BSC057N08NS3GATMA1 is an OptiMOS™ power MOSFET featuring a single N-channel design | Infineon Technologies Corporation | 3.091 | BOM |
| BSC036NE7NS3GATMA1 | OptiMOS technology enables high current density, low on-resistance, and minimal capacitance for efficient energy transmission | Infineon Technologies Corporation | 2.448 | BOM |
| BSC027N04LSGATMA1 | Product BSC027N04LSGATMA1 is a MOSFET with N-channel configuration, capable of handling 30 volts and a current of 80 amps | Infineon Technologies Corporation | 3.839 | BOM |
| BSC059N04LSGATMA1 | Compact and durable N-channel MOSFET specifically engineered for high-voltage and high-current switching tasks | Infineon Technologies Corporation | 3.411 | BOM |
| IRFH8201TRPBF | Transistor N-channel MOSFET with a voltage rating of 25V and a current rating of 49A, packaged in an 8-pin PQFN format for tape and reel packaging | Infineon Technologies Corporation | 3.779 | BOM |
| BSC007N04LS6ATMA1 | Compliant 1 mm 3 W 1 8 ns 40 ns 175 °C | Infineon Technologies Corporation | 3.190 | BOM |
| BSC025N08LS5ATMA1 | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.294 | BOM |
| BSC067N06LS3 | 60V 6.7mΩ@50A,10V 2.2V@35uA null TDSON-8 MOSFETs ROHS | Infineon Technologies Corporation | 3.889 | BOM |
| BSC014N04LSI | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | Infineon Technologies Corporation | 3.819 | BOM |
| BSZ900N20NS3G | N-Channel 200 V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8 | Infineon Technologies Corporation | 2.524 | BOM |
| IAUC120N04S6N013 | MOSFET MOSFET_(20V 40V) | Infineon Technologies Corporation | 3.201 | BOM |
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