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PG-TDSON-8
(insgesamt 272 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| BSC070N10NS3GATMA1 | 100V N-channel MOSFET designed for automotive environments, capable of handling up to 90A of current | Infineon Technologies | 3.614 | BOM |
| BSC110N15NS5ATMA1 | MOSFET, N-channel, 150V, 76A, TDSON-8 package | Infineon | 3.021 | BOM |
| BSC030N08NS5ATMA1 | Transistor MOSFET for Electronic Applications | Infineon | 2.319 | BOM |
| BSC026N08NS5ATMA1 | Transistor MOSFET N-channel | Infineon | 3.803 | BOM |
| BSC016N06NSATMA1 | OptiMOS Power Mosfet with 60 V voltage rating, 1.6 mOhm resistance, and 71 nC gate charge | Infineon | 2.348 | BOM |
| IRFH5406TRPBF | Tape-delivered N-channel 60V 11A 8-pin QFN MOSFET | Infineon | 3.368 | BOM |
| IRFH7545TRPBF | IRFH7545TRPBF MOSFET N 60V 85A PQFN | Infineon | 3.862 | BOM |
| BSC066N06NSATMA1 | Low-resistance MOSFET for high-frequency switchin | Infineon | 2.160 | BOM |
| BSC014N04LSATMA1 | OptiMOS N-channel MOSFET with 40V and 100A rating in TDSON-8 package | Infineon | 3.251 | BOM |
| BSC190N15NS3GATMA1 | Single N-Channel 150 V 19 mOhm 23 nC OptiMOS Power Mosfet TDSON-8 | Infineon | 3.206 | BOM |
| BSC028N06NSTATMA1 | Transistor MOSFET N-Channel 60V 24A 8-Pin TDSON EP T/R | Infineon | 2.588 | BOM |
| BSC011N03LS | This MOSFET, labeled BSC011N03LS, conforms to the ROHS directive, ensuring it meets environmental standards | Infineon Technologies Corporation | 2.309 | BOM |
| BSC350N20NSFDATMA1 | 8-pin TDSON EP-packaged N-channel MOSFET with a rating of 200V and 35A, available in tape and reel format | Infineon Technologies Corporation | 3.932 | BOM |
| BSC070N10LS5ATMA1 | BSC070N10LS5ATMA1 features a TDSON-8 package and is compliant with ROHS regulations | Infineon Technologies Corporation | 2.058 | BOM |
| ISC060N10NM6ATMA1 | Advanced semiconductor device for reliable switching and contro | Infineon Technologies Corporation | 2.693 | BOM |
| BSC070N10NS5ATMA1 | This SMT Power Mosfet, part of the BSC070xx Series, is designed to have a low gate charge of 41nC for efficient operation | Infineon Technologies Corporation | 3.734 | BOM |
| BSC146N10LS5ATMA1 | High-voltage MOSFET with trench technology | Infineon Technologies Corporation | 2.418 | BOM |
| BSC046N10NS3GATMA1 | N-Channel 100 V 17A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-7 | Infineon Technologies Corporation | 2.781 | BOM |
| IRFH7110TRPBF | 1A 100V 8-Pin QFN EP Transistor MOSFET N-channel | Infineon | 3.120 | BOM |
| BSC030N03LSGATMA1 | N-Channel 30 V 23A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1 | Infineon Technologies Corporation | 3.834 | BOM |
| BSC0902NSATMA1 | Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.832 | BOM |
| BSC600N25NS3GATMA1 | Low gate charge of 22nC for faster switching | Infineon Technologies Corporation | 3.731 | BOM |
| BSC670N25NSFDATMA1 | This MOSFET, labeled BSC670N25NSFDATMA1, is packaged in a TDSON-8 format and is compliant with the ROHS directive | Infineon Technologies Corporation | 2.682 | BOM |
| BSC320N20NS3GATMA1 | This INFINEON MOSFET | Infineon | 3.078 | BOM |
| IRFH5020TRPBF | N-channel hexfet MOSFET with 200V voltage rating | Infineon | 9.198 | BOM |
| BSC098N10NS5ATMA1 | OptiMOS 5 MOSFET power transistor rated for 100V | Infineon Technologies Corporation | 2.852 | BOM |
| BSC050N10NS5ATMA1 | N-Channel 100 V 16A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount PG-TDSON-8-7 | Infineon Technologies Corporation | 3.812 | BOM |
| BSC028N06NSATMA1 | State-of-the-art Trans MOSFET for demanding automotive systems requiring low-power loss and high-reliability performance | Infineon Technologies Corporation | 2.201 | BOM |
| BSC039N06NSATMA1 | Single N-Channel Power Mosfet with 60V Voltage and 3.9mOhm Resistance | Infineon | 2.393 | BOM |
| BSC014N06NSATMA1 | OptiMOS MOSFET with N-channel, rated for 60V and 100A | Infineon Technologies Corporation | 2.309 | BOM |
| BSC027N06LS5ATMA1 | Mosfet, N-Ch, 60V, 150Deg C, 83W Rohs Compliant: Yes |Infineon BSC027N06LS5ATMA1 | Infineon Technologies Corporation | 3.657 | BOM |
| BSC059N04LS6ATMA1 | Trans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.998 | BOM |
| BSC010N04LS6ATMA1 | Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.771 | BOM |
| BSC030P03NS3GAUMA1 | MOSFET, P CH, -30V, -100A, TDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Source Voltage Vds:-30V; On Resistance | Infineon Technologies Corporation | 2.324 | BOM |
| BSC520N15NS3GATMA1 | BSC520N15NS3GATMA1 N-Channel MOSFET | Infineon Technologies Corporation | 3.534 | BOM |
| BSC360N15NS3GATMA1 | Single N-Channel Power Mosfet with OptiMOS™ Technology | Infineon Technologies Corporation | 3.410 | BOM |
| BSC109N10NS3GATMA1 | Single N-Channel 100 V Power Mosfet with 10.9 mOhm | Infineon Technologies Corporation | 3.339 | BOM |
| BSC160N10NS3GATMA1 | Product BSC160N10NS3GATMA1 is a N-channel MOSFET with a voltage rating of 100V and a current rating of 8 | Infineon Technologies Corporation | 2.589 | BOM |
| BSC123N08NS3GATMA1 | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.362 | BOM |
| BSC047N08NS3GATMA1 | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.921 | BOM |
| BSC100N06LS3GATMA1 | 60V N-channel MOSFET with 12A current rating and TDSON EP package | Infineon Technologies Corporation | 3.343 | BOM |
| BSC028N06LS3GATMA1 | Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.371 | BOM |
| BSC067N06LS3GATMA1 | Power transistor with N-channel design, capable of handling up to 60 volts and 15 amps of current | Infineon Technologies Corporation | 3.423 | BOM |
| BSC035N04LSGATMA1 | 21A current rating in an 8-pin package | Infineon Technologies Corporation | 2.827 | BOM |
| BSC093N04LSGATMA1 | Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.048 | BOM |
| IAUC24N10S5L300 | High-Performance Transistor for Field Effect | infineon | 8.466 | BOM |
| IAUC120N04S6N010 | Robust power amplifier module for diverse industrial need | infineon | 9.505 | BOM |
| IAUC100N04S6N015 | Field-Effect Transistor for Power applications | infineon | 5.766 | BOM |
| IAUC90N10S5N062 | IAUC90N10S5N062 75V 120V MOSFET MOSFET | Infineon Technologies Corporation | 3.968 | BOM |
| IAUC80N04S6N036 | IAUC80N04S6N036 is a MOSFET component with a voltage range of 20V to 40V | Infineon Technologies Corporation | 3.422 | BOM |
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