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PG-TDSON-8
(insgesamt 272 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| BSC014NE2LSIATMA1 | This Infineon MOSFET is suitable for a wide range of high-performance applications | Infineon Technologies Corporation | 2.187 | BOM |
| BSC032NE2LSATMA1 | Transistor MOSFET N-channel with 25V voltage rating and 22A current capacity in a 8-pin TDSON EP package, supplied in tape and reel packaging | Infineon Technologies Corporation | 2.846 | BOM |
| BSC159N10LSFGATMA1 | Robust and efficient device for demanding application | Infineon Technologies Corporation | 2.778 | BOM |
| BSC090N03MSGATMA1 | N-channel power MOSFET suitable for DC-DC converters, motor drives, and solar panel charge controller | Infineon Technologies Corporation | 2.063 | BOM |
| BSC014N03MSGATMA1 | Powerful and efficient MOSFET solution for high-reliability and low-voltage operations up to V | Infineon Technologies Corporation | 3.743 | BOM |
| BSC014N03LSGATMA1 | High-power N-channel transistor for demanding applications | Infineon Technologies Corporation | 2.151 | BOM |
| BSC057N03MSGATMA1 | High-voltage, high-current transistor for demanding application | Infineon Technologies Corporation | 2.189 | BOM |
| ISC0804NLSATMA1 | High-power electronic component for efficient energy transfer and contro | Infineon Technologies Corporation | 2.106 | BOM |
| BSC0805LSATMA1 | Advanced power semiconductor technology for reliable system performanc | Infineon Technologies Corporation | 3.412 | BOM |
| BSC079N10NSGATMA1 | High-voltage device with 100V rating and 13.4A current handling capacity | Infineon Technologies Corporation | 3.549 | BOM |
| BSC0803LSATMA1 | High-power N-Channel Transistor for efficient power control application | Infineon Technologies Corporation | 3.194 | BOM |
| ISC0603NLSATMA1 | Low-loss, high-frequency power transisto | Infineon Technologies Corporation | 2.166 | BOM |
| BSC0704LSATMA1 | The BSC0704LSATMA1 OptiMOS transistor is ideal for power applications up to 60V | Infineon Technologies Corporation | 3.601 | BOM |
| BSC016N03LSGATMA1 | Robust circuit protection with high current handling capabilitie | Infineon Technologies Corporation | 3.917 | BOM |
| BSC019N02KSGAUMA1 | Ideal for DC-DC converters, motor drives, and high-current switching circuits | Infineon Technologies Corporation | 3.076 | BOM |
| IAUC40N08S5L140ATMA1 | Power MOSFET Designed for Automotive Environments, AEC-Q101 Qualified | Infineon Technologies Corporation | 2.450 | BOM |
| IAUC60N06S5L073ATMA1 | High-power electronic component for demanding application | Infineon Technologies Corporation | 3.930 | BOM |
| IAUC60N04S6L030HATMA1 | Infineon IAUC60N04S6L030HATMA1 Power Mosfet | Infineon Technologies Corporation | 2.524 | BOM |
| IAUC45N04S6L063HATMA1 | Automotive Energy Control Device | Infineon Technologies Corporation | 2.906 | BOM |
| BSC123N10LSGATMA1 | High-voltage, high-current OptiMOS MOSFET for efficient and safe power transfe | Infineon Technologies Corporation | 3.069 | BOM |
| BSC440N10NS3GATMA1 | Reliable EP T/R package for 8-Pin TDSON design in harsh environments | Infineon Technologies Corporation | 2.009 | BOM |
| BSC100N10NSFGATMA1 | Advanced power electronic component suitable for automotive applications | Infineon Technologies Corporation | 2.646 | BOM |
| BSC118N10NSGATMA1 | Enhanced performance for + voltage system | Infineon Technologies Corporation | 2.593 | BOM |
| BSC252N10NSFGATMA1 | Optimized performance and minimized thermal resistance for reliable operations | Infineon Technologies Corporation | 2.514 | BOM |
| BSC042NE7NS3GATMA1 | Advanced N-channel MOSFET design for reliable high-current operation up t | Infineon Technologies Corporation | 3.023 | BOM |
| BSC054N04NSGATMA1 | N-channel MOSFET with high voltage and current capabiliti | Infineon Technologies Corporation | 3.766 | BOM |
| BSC030N04NSGATMA1 | Advanced V, A power transistor ideal for wide range of digital and analog circuit | Infineon Technologies Corporation | 2.372 | BOM |
| BSC050N04LSGATMA1 | Advanced logic-level device for smart power management | Infineon Technologies Corporation | 2.813 | BOM |
| BSC019N04NSGATMA1 | High-power switching solution for automotive applications, offering high efficiency and reliability | Infineon Technologies Corporation | 3.029 | BOM |
| BSC150N03LDGATMA1 | Compact TDSON-package for space-constrained designs and reduced costs | Infineon Technologies Corporation | 2.198 | BOM |
| BSC042N03MSGATMA1 | High-voltage N-channel MOSFET for reliable switching applications up to V and | Infineon Technologies Corporation | 3.516 | BOM |
| BSC0909NSATMA1 | TDSON-package ensures efficient thermal dissipation and reduced noise interference | Infineon Technologies Corporation | 3.395 | BOM |
| BSC025N03MSGATMA1 | OptiMOS 3M technology utilized in the design of this MOSFET | Infineon Technologies Corporation | 2.623 | BOM |
| BSC057N03LSGATMA1 | N-channel transistor MOSFET for switching applications with 30V voltage handling and 17A current capacity in 8-pin TDSON EP package | Infineon Technologies Corporation | 2.674 | BOM |
| BSC042N03LSGATMA1 | 30V Transistor with 93A Capability | Infineon Technologies Corporation | 2.136 | BOM |
| BSC026N02KSGAUMA1 | 8-Pin TDSON EP Packaging for Transistor MOSFET | Infineon Technologies Corporation | 3.621 | BOM |
| BSC046N02KSGAUMA1 | Compact power management component for efficient energy transfer | Infineon Technologies Corporation | 3.576 | BOM |
| IPLK80R750P7ATMA1 | Advanced power electronics component offering reliable performance and reduced thermal stres | Infineon Technologies Corporation | 2.388 | BOM |
| IPLK80R900P7ATMA1 | High-power transistor for robust power control application | Infineon Technologies Corporation | 2.125 | BOM |
| IPLK80R1K4P7ATMA1 | High-reliability transistor for demanding automotive system | Infineon Technologies Corporation | 2.982 | BOM |
| IPLK80R1K2P7ATMA1 | N-channel device for efficient switching applications | Infineon Technologies Corporation | 3.748 | BOM |
| IPLK70R900P7ATMA1 | Robust and compact package with low thermal resistance for improved heat dissipation and reduced risk of overheating | Infineon Technologies Corporation | 3.839 | BOM |
| BSC097N06NSTATMA1 | Trans MOSFET N-CH 60V 13A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.731 | BOM |
| BSC014N04LSTATMA1 | Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.778 | BOM |
| ISC012N04LM6ATMA1 | N Channel Power Mosfet | Infineon Technologies Corporation | 2.843 | BOM |
| BSC0502NSIATMA1 | Trans MOSFET N-CH 30V 26A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.753 | BOM |
| BSC004NE2LS5ATMA1 | Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.353 | BOM |
| BSC079N03LSCGATMA1 | Trans MOSFET N-CH 34V 14A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.918 | BOM |
| BSC018NE2LSATMA1 | High-power N-channel MOSFET transistor designed for operating at 25V with a maximum current capacity of 29A | Infineon | 2.376 | BOM |
| BSC0804LSATMA1 | BSC0804LSATMA1 MOSFET is configured as N-channel, with specifications of 100 volts, 40 amperes, and housed in a TDSON package | Infineon | 3.198 | BOM |
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