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PG-TDSON-8
(insgesamt 272 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| IPG20N06S2L-65A | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2.002 | BOM |
| IAUC64N08S5L075ATMA1 | N-Channel 80 V 64A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-33 | Infineon Technologies Corporation | 2.398 | BOM |
| BSC020N03LSGATMA1 | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3.368 | BOM |
| IPLK70R750P7ATMA1 | High-power N-channel power MOSFET designed for demanding application | Infineon Technologies Corporation | 2.914 | BOM |
| IPLK70R2K0P7ATMA1 | Compact design with exceptional current handling for industrial use case | Infineon Technologies Corporation | 3.403 | BOM |
| IPLK60R600PFD7ATMA1 | Powerful switching solution for high-voltage, high-current system | Infineon Technologies Corporation | 2.531 | BOM |
| IPLK60R360PFD7ATMA1 | Robust and reliable device for demanding industrial automation and automotive systems | Infineon Technologies Corporation | 2.384 | BOM |
| IPLK60R1K5PFD7ATMA1 | N-Channel Power MOSFET solution for demanding applications up t | Infineon Technologies Corporation | 2.920 | BOM |
| BSC22DN20NS3GATMA1 | N-channel MOSFET with current rating and compact TDSON-packag | Infineon Technologies Corporation | 2.381 | BOM |
| BSC12DN20NS3GATMA1 | Compact and robust transistor design with high voltage ratin | Infineon Technologies Corporation | 2.530 | BOM |
| BSC900N20NS3GATMA1 | Low-loss, high-reliability power device for industrial control (54 chars) | Infineon Technologies Corporation | 3.226 | BOM |
| BSC120N12LSGATMA1 | trench MOSFET for high-performance circuit design | Infineon Technologies Corporation | 2.349 | BOM |
| BSC080N12LSGATMA1 | Efficient voltage regulation and power control solution | Infineon Technologies Corporation | 2.272 | BOM |
| IAUC26N10S5L245ATMA1 | Reliable operation up to with high current handling capabiliti | Infineon Technologies Corporation | 2.422 | BOM |
| IAUC100N10S5L054ATMA1 | High Power N Channel MOSFET | Infineon Technologies Corporation | 3.786 | BOM |
| ISC0805NLSATMA1 | Robust and reliable solution for demanding DC/DC converter design | Infineon Technologies Corporation | 2.888 | BOM |
| IAUC50N08S5L096ATMA1 | N-Channel Transistor Power MOSFET 80V 50A | Infineon Technologies Corporation | 2.284 | BOM |
| IAUC28N08S5L230ATMA1 | Power MOSFET, N-Channel, 80V, 28A, 0.015 ohm, TDSON, Surface Mount | Infineon Technologies Corporation | 2.475 | BOM |
| IAUZ40N08S5N100ATMA1 | 80V, 40A, 10mΩ, 18.6nC, QFN 3x3 OptiMOS™ 5 | Infineon | 9.458 | BOM |
| ISC0602NLSATMA1 | Reliable and efficient power management for a wide range of load | Infineon Technologies Corporation | 2.475 | BOM |
| BSC155N06NDATMA1 | Low on-state resistance for efficient current fl | Infineon Technologies Corporation | 3.362 | BOM |
| BSC112N06LDATMA1 | Product BSC112N06LDATMA1 is a N-Channel MOSFET with a 60V voltage rating | Infineon Technologies Corporation | 3.522 | BOM |
| ISC0702NLSATMA1 | High-frequency switching and low-loss performance in a small footprint packag | Infineon Technologies Corporation | 2.117 | BOM |
| IAUC120N06S5N011ATMA1 | Precise control and high current handling for sensitive systems | Infineon Technologies Corporation | 3.480 | BOM |
| BSC019N06NSATMA1 | High-power MOSFET for demanding application | Infineon Technologies Corporation | 3.796 | BOM |
| IAUC41N06S5N102ATMA1 | Automotive Grade AEC-Q101 Power Mosfet | Infineon Technologies Corporation | 3.278 | BOM |
| ISC0703NLSATMA1 | N-channel 60V 13A Transistor with TDSON EP Package | Infineon Technologies Corporation | 2.754 | BOM |
| IAUC120N06S5L011ATMA1 | Reliable and efficient power mosfet solution for electric vehicle chargers, DC-DC converters and motor drive | Infineon Technologies Corporation | 3.968 | BOM |
| ISC028N04NM5ATMA1 | Tape and reel packaged N-channel MOSFET with 40V voltage rating and 24A current rating in an 8-pin TDSON EP package | Infineon Technologies Corporation | 2.211 | BOM |
| ISC007N04NM6ATMA1 | Robust and compact design for demanding industrial condition | Infineon Technologies Corporation | 3.594 | BOM |
| ISC046N04NM5ATMA1 | The ISC046N04NM5ATMA1 MOSFET is engineered for N-Channel operation with a 40V voltage tolerance and 19A current capability | Infineon Technologies Corporation | 3.079 | BOM |
| IPG20N04S4L18AATMA1 | Robust and efficient power management solution for electric vehicles, hybrids and conventional cars | Infineon Technologies Corporation | 3.847 | BOM |
| BSC010N04LSTATMA1 | Robust and efficient device for advanced DC-DC converter system | Infineon Technologies Corporation | 2.812 | BOM |
| ISC017N04NM5ATMA1 | High current capacity for this N-Channel MOSFET | Infineon Technologies Corporation | 3.197 | BOM |
| ISC019N04NM5ATMA1 | N Channel Power Transistor | Infineon Technologies Corporation | 2.877 | BOM |
| BSC076N04NDATMA1 | Excellent thermal performance and high-speed switching capabilitie | Infineon Technologies Corporation | 3.681 | BOM |
| BSC010N04LSCATMA1 | Advanced gate technology enables fast switching times with minimal capacitance | Infineon Technologies Corporation | 3.894 | BOM |
| BSC0906NSATMA1 | Advanced power electronic component for high-frequency switching circuits | Infineon Technologies Corporation | 3.240 | BOM |
| BSC0901NSIATMA1 | Robust and versatile power transistor for DC-DC converters and battery charger | Infineon Technologies Corporation | 3.918 | BOM |
| ISC045N03L5SATMA1 | Low-on-state resistance ensures reduced power consumption and heat generatio | Infineon Technologies Corporation | 2.623 | BOM |
| BSC005N03LS5IATMA1 | Compact design enables easy integration into complex systems | Infineon Technologies Corporation | 3.017 | BOM |
| BSC005N03LS5ATMA1 | High-performance MOSFET solution for advanced electronic designs | Infineon Technologies Corporation | 3.080 | BOM |
| ISC019N03L5SATMA1 | Next-generation N-channel MOSFETs for reliable high-power switchin | Infineon Technologies Corporation | 2.651 | BOM |
| BSC0501NSIATMA1 | Advanced N-channel MOSFET technology for efficient energy transf | Infineon Technologies Corporation | 2.009 | BOM |
| BSC052N03LSATMA1 | Efficient power device with high current capaci | Infineon Technologies Corporation | 3.041 | BOM |
| ISC037N03L5ISATMA1 | High-performance MOSFET for A, Ω @ V operatio | Infineon Technologies Corporation | 3.245 | BOM |
| ISC011N03L5SATMA1 | High-performance N-channel power transistor for automotive and industrial applications | Infineon Technologies Corporation | 2.273 | BOM |
| ISC026N03L5SATMA1 | High-power N-channel MOSFET for demanding application | Infineon Technologies Corporation | 3.726 | BOM |
| BSC009NE2LSATMA1 | Reliable V operation supports a wide range of industrial control, motor drive, and power supply application | Infineon Technologies Corporation | 2.286 | BOM |
| BSC015NE2LS5IATMA1 | Advanced V, Ω@A, V, and @A N-channel TDSON-MOSFETs for robust application | Infineon Technologies Corporation | 2.701 | BOM |
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