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SOT-23-3
(insgesamt 3992 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| SI2308CDS-T1-GE3 | Transistor for small signal applications | Vishay | 9.458 | BOM |
| SI2369BDS-T1-GE3 | 2.5W SI2369BDS-T1-GE3 Power Transistor | Vishay | 9.458 | BOM |
| SI2337DS-T1-E3 | Surface-mount SOT-23-3 package for compact designs | Vishay | 7.712 | BOM |
| SQ2315ES-T1-GE3 | Automotive-grade MOSFET with V rating for high-power switching in harsh environments ( char | Vishay | 9.458 | BOM |
| 2N7002K-T1-E3 | N-Channel 60 V (D-S) MOSFET | VISHAY INTERTECHNOLOGY INC | 7.803 | BOM |
| 2N7002K-T1 | N-channel 60V MOSFET | vishay | 6.506 | BOM |
| SI2333CDS-T1-E3 | With its low resistance and high current capabilities, this MOSFET is an efficient and reliable component for circuit design | Vishay | 9.458 | BOM |
| SI2302CDS-T1-E3 | MOSFET with N-Channel configuration and a Drain-to-Source voltage rating of 20 volts | Vishay | 9.458 | BOM |
| SI2366DS-T1-GE3 | Small Signal Field-Effect Transistors | Vishay | 9.458 | BOM |
| SQ2310ES-T1_GE3 | N-Channel 20 V 6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236) | Vishay | 9.458 | BOM |
| SQ2310ES-T1-GE3 | N-MOSFET transistor designed for unipolar operation, rated for 20V voltage and 3 | Vishay | 9.948 | BOM |
| SI2318CDS-T1-BE3 | ROHS compliant: Adheres to environmental regulations for lead-free manufacturing | Vishay | 9.458 | BOM |
| SQ2309ES-T1-GE3 | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | vishay | 7.496 | BOM |
| SQ2301ES-T1_GE3 | High-voltage switching transistor for automotive applications | Vishay | 7.418 | BOM |
| SI2377EDS-T1-GE3 | P-Channel 20 V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236) | Vishay | 9.458 | BOM |
| SI2304DDS-T1-GE3 | Voltage: 30V, Current: 3.6A, Power: 1.7W, Resistance: 60mohm @ 10V | Vishay | 6.614 | BOM |
| SQ2308CES-T1_GE3 | AEC-Q101 Compliant Transistor for Automotive Use | Vishay | 9.188 | BOM |
| SI2387DS-T1-GE3 | MOSFET P-Channel 80V AEC-Q101 Qualified | Vishay | 9.458 | BOM |
| SQ2318AES-T1_GE3 | Silicon N-Channel Power MOSFET, 8A Drain Current, 40V Voltage Rating, 0.031ohm On-Resistance, TO-236AB Package | Vishay | 9.458 | BOM |
| SI2369DS-T1-BE3 | Efficient P-channel MOSFET with a 24m Ohm on-resistance at 30V voltage | Vishay | 9.458 | BOM |
| MMBD6050 | Diode 70 V 200mA Surface Mount SOT-23-3 | onsemi | 5.450 | BOM |
| LMV431BIMF/NOPB | Shunt Voltage Reference IC Adjustable 1.24V 30 VV ±0.5% 15 mA SOT-23-3 | Texas Instruments | 9.551 | BOM |
| ZVP3310FTA | Product ZVP3310FTA is a Si P-channel MOSFET optimized for small-signal circuitry | Diodes Incorporated | 5.772 | BOM |
| DMP3068L-7 | This MOSFET has a low on-state resistance of 72mΩ at 10V and can handle a power dissipation of 700mW at 4.2A | Diodes Incorporated | 6.873 | BOM |
| DMN63D8L-7 | The DMN63D8L-7 MOSFET is an N Channel semiconductor suitable for circuits operating within a 30V voltage range | Diodes Incorporated | 8.475 | BOM |
| DT1452-02SO-7 | Surge protector for sensitive circuits | Diodes Incorporated | 8.901 | BOM |
| LM4040A41IDBZR | Shunt Voltage Reference IC Fixed 4.096V V ±0.1% 15 mA SOT-23-3 | TEXAS INSTRUMENTS INC | 8.792 | BOM |
| DSS4320T-7 | Bipolar Transistors product DSS4320T-7 | Diodes Incorporated | 8.669 | BOM |
| BAT750-7-F | Rectifier Diode BAT750-7-F: Schottky Type, Single Element, 0.75A, 40V Reverse Voltage, Silicon Material, Green Color, Plastic Package-3 | Diodes Incorporated | 9.019 | BOM |
| BSH114,215 | Compact power transistor solution for automotive and industrial applications | Nexperia | 9.458 | BOM |
| 2N7002-7-F | 23 package with 3 pins | Diodes Incorporated | 4.793 | BOM |
| ATL431LIAQDBZRQ1 | Voltage References Automotive, high-bandwidth, low-IQ programmable shunt regulator (pinout: KRA) 3-SOT-23 -40 to 125 | Texas Instruments | 5.778 | BOM |
| REF3020AIDBZT | REF3020AIDBZT series voltage reference suitable for -40 to 125 degrees Celsius operation | Texas Instruments | 8.601 | BOM |
| REF2930AIDBZT | Voltage References 3.0V 100ppm/DegC 50uA SOT23-3 Series | TEXAS INSTRUMENTS INC | 8.120 | BOM |
| MGSF1N02LT1G | Low-power control for small signals and sensor | Onsemi | 9.228 | BOM |
| BSS138LT3G | Product BSS138LT3G is an N-channel MOSFET boasting a voltage rating of 50V | Onsemi | 8.074 | BOM |
| BC817-16LT1G | BC817-16LT1G: 500mA 50V NPN BJT Transistors | Onsemi | 8.640 | BOM |
| LM4040DIM3-4.1 | Shunt Voltage Reference IC Fixed 4.096V V ±1% 15 mA SOT-23-3 | Texas Instruments | 8.772 | BOM |
| SZNUD3160LT1G | MOSFET Power Driver with 272mA in a 3-pin SOT-23 package | Onsemi | 9.458 | BOM |
| MMBT4403LT1G | 3-Pin SOT-23 PNP Bipolar Transistor 40V 0.6A 300mW | Onsemi | 6.882 | BOM |
| NUD3124LT1G | Small Signal Field-Effect Transistor | Onsemi | 9.710 | BOM |
| NUD3112LT1G | 12 Volt Relay Driver | Onsemi | 8.274 | BOM |
| MCP100T-300I/TT | Single power supply circuit | Microchip Technology | 9.385 | BOM |
| LM4040C25MDBZTEP | Shunt Voltage Reference IC Fixed 2.5V V ±0.64% 15 mA SOT-23-3 | TI | 7.877 | BOM |
| LM4040BIM3-5.0/NOPB | Stable output voltage with low dropout and noise immuni | Texas Instruments | 9.803 | BOM |
| LM4040EIM3-2.5/NOPB | Shunt Voltage Reference IC Fixed 2.5V V ±2% 15 mA SOT-23-3 | Texas Instruments | 9.012 | BOM |
| LM4041CIM3-ADJ/NOPB | LM4041CIM3-ADJ/NOPB is a two terminal voltage reference with an output of 1.225V that is trim/adjustable | TI | 9.356 | BOM |
| LM431ACM3/NOPB | Shunt Voltage Reference IC Adjustable 2.495V 37 VV ±2.2% 100 mA SOT-23-3 | TEXAS INSTRUMENTS INC | 6.882 | BOM |
| REF3140AIDBZT | Voltage References 20ppm/DegC 100uA SOT23-3 Series | TEXAS INSTRUMENTS INC | 9.552 | BOM |
| REF3120AIDBZT | Series Voltage Reference IC Fixed 2.048V V ±0.2% 10 mA SOT-23-3 | Texas Instruments | 9.863 | BOM |
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