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SOT363
(insgesamt 75 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| ADM1085AKSZ | 6-Pin SC-70 package | Analog Devices | 3.943 | BOM |
| BGA2817 | Compact SMD amplifier for RF and microwave application | Nxp | 2.415 | BOM |
| PMGD370XN | PMGD370XN: N-channel 30V 0.74A TSSOP 6-pin MOSFET | Nxp | 2.182 | BOM |
| NTJD4105CT1G | Low-voltage, low-power switching solution for sensitive circuits | ON | 2.895 | BOM |
| L2N7002DW1T1G | Tape and Reel Packaged Dual N-Channel MOSFET Array with 6-Pin SC-88 Package, 60V Voltage Rating and ±0.115A Current Rating | LESHAN RADIO CO LTD | 9.230 | BOM |
| BGM1014 | High-frequency amplifier with excellent linearity and efficienc | Nxp | 2.999 | BOM |
| BGM1013 | High-speed amplification and low-noise operation for reliable signal processin | Nxp | 3.791 | BOM |
| 74LVC1G18GW | This product is designed to withstand the rigors of harsh automotive environments with operating temperatures from -40°C to 125°C | Nexperia | 3.841 | BOM |
| 74AUP1G157GW | Precise decoding and encoding of binary information for reliable system operations | Nexperia | 3.342 | BOM |
| ABA-51563 | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | AVAGO | 3.886 | BOM |
| MGA-86563-TR1G | RF Amplifier with 5 dBm Output and 21.8 dB Gain | broadcom limited | 2 | BOM |
| BGU7045,115 | Boost your RF signal with this single MMIC amplifie | Nxp | 9.458 | BOM |
| MASWSS0115 | SPDT RF switch with 0.55dB maximum insertion loss | Te Connectivity | 5.196 | BOM |
| BAV70DW | Dual Pair Common Cathode Switching Diode BAV70DW: Rated for 75V, 1.25V@150mA Forward Voltage, 4ns Switching Time, SOT-363 Package, ROHS Certification | DIOTEC SEMICONDUCTOR AG | 5.747 | BOM |
| BAV99BRW | Featuring a voltage reverse recovery rating spanning 50-350V, BAV99BRW belongs to the category of small signal switching diodes | FORMOSA MICROSEMI CO LTD | 9.933 | BOM |
| BAV99DW | Product BAV99DW is a rectifier diode designed for switching applications, with a voltage rating of 75V and a current handling capacity of 0 | GOOD-ARK ELECTRONICS CO LTD | 9.493 | BOM |
| BGA2869 | Wide Band Low Power Amplifier Designed for RF/Microwave Signals | Nxp | 6.187 | BOM |
| ABA-54563 | High-Speed Connectivity: Enables efficient data transfer for IoT use cases | Avago Technologies | 7.030 | BOM |
| MASWSS0204 | Miniaturized SP4T chip optimizes 5G system performance and reliability | Te Connectivity | 7.586 | BOM |
| MASWSS0192 | RF Switch SPDT with 6-Pin SOT-363 Bulk Packaging, 0MHz to 3GHz Frequency Range | Te Connectivity | 7.919 | BOM |
| FDG6342L | Experience seamless integration and enhanced performance with the FDG6342L's high-quality design and cutting-edge technology | FAIRCHILD | 5.336 | BOM |
| NTJD4105CT2G | Low voltage operation with high current handling capabilitie | ON | 7.829 | BOM |
| DMN66D0LDW | Dual N-Channel MOSFET with Enhancement Mode | DIODES | 9.127 | BOM |
| DDC114YU | DDC114YU Pre-Biased Bipolar Transistors | diodes incorporated | 6.470 | BOM |
| BAW56DW | Advanced anode design ensures fast and reliable operatio | Diodes Incorporated | 8.411 | BOM |
| BC857BS | Low voltage operation with minimal power consumption | Yangjie Technology | 8.512 | BOM |
| BAV199DW | Powerful switching diodes for demanding industrial control systems | GALAXY SEMI-CONDUCTOR CO LTD | 9.480 | BOM |
| BAS16TW | Ultra small silicon rectifier diode with three elements, meeting RoHS standards, capable of handling 0.15A current and 75V V(RRM) | SECOS CORP | 8.330 | BOM |
| BAP70AM | PIN Diode Constructed from Silicon, Encased in Plastic, SC-88 Package with 6 Pins | nxp | 9.558 | BOM |
| NTB0101GW | A versatile device for transmitting and receiving signals while detecting direction and providing three operating state | nxp | 6.935 | BOM |
| MMBD4148TW | Ultra-low dropout voltage regulation with fast response time and low noise operatio | diodes incorporated | 5.250 | BOM |
| DMG1016UDW | Enhancement Mode MOSFET Complementary Pair" | diodes incorporated | 6.545 | BOM |
| BF1208 | BF1208 - RF MOSFET Transistors | NXP SEMICONDUCTORS | 8.289 | BOM |
| BAW567DW | switching diode | diodes incorporated | 7.337 | BOM |
| BAS70TW | This product is also compliant with the Restriction of Hazardous Substances directive | SECOS CORP | 8.172 | BOM |
| BAV756DW | Diode Array 2 Pair CA + CC 75 V 150mA Surface Mount 6-TSSOP, SC-88, SOT-363 | DIOTEC SEMICONDUCTOR AG | 6.287 | BOM |
| SGA4563Z | RF Amplifier DC-2.5GHz SSG 20.2dB NF 2.4dB SiGe | QORVO INC | 9.413 | BOM |
| BAW101S | switching diode | Diodes Incorporated | 9.458 | BOM |
| DMN5L06DWK | MOSFET | DIODES | 7.963 | BOM |
| DCX114EU | Bipolar Transistors - Pre-Biased | Diodes Incorporated | 8.378 | BOM |
| DMN5L06WK | MOSFET | DIODES | 7.807 | BOM |
| DRDNB21D | Gate Drivers | diodes incorporated | 9.265 | BOM |
| BGA2818 | MMIC Wideband Amplifier | NXP Semiconductor | 2.983 | BOM |
| BGA2867 | Miniature module amplifies signals across multiple frequencies | Nxp | 4.098 | BOM |
| 74LVC1G157GW | Six-input, two-output multiplexer with fast switching time | Nexperia | 5.599 | BOM |
| NC7SP157L6X | NC7SP157L6X - Multiplexer 1-Element CMOS 2-IN 6-Pin MicroPak T/R | ON | 2.630 | BOM |
| BGA2716,115 | Compact single-chip solution for radio frequency amplificatio | Nxp | 5.491 | BOM |
| BGA2771 | Compact design for ease of integration into modern device | Nxp | 7.352 | BOM |
| BGA2709,115 | High-gain amplification for multi-band wireless applicatio | Nxp | 4.334 | BOM |
| MMDT4413 | Low-dropout voltage regulator with low quiescent current | Diodes Incorporated | 7.486 | BOM |
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