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TO-247
(insgesamt 372 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| AOK40B65H2AL | AOK40B65H2AL is an N-channel IGBT chip with a voltage rating of 650V | Alpha And Omega Semiconductor | 8.506 | BOM |
| SPW47N60C2 | 600V-rated N-channel MOSFET with a TO-247 package, capable of handling currents up to 47A | Infineon Technologies Ag | 8.456 | BOM |
| LME49830TB/NOPB | A high-quality MOSFET power amplifier for precise audio reproduction | Texas Instruments | 8.421 | BOM |
| LME49810TB | Mono audio amplifier with one operating mode | Texas Instruments | 7.766 | BOM |
| IGW50N60H3 | 50A 600V 333W IGBT Transistors | Infineon | 7.783 | BOM |
| BDV65BG | Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| STGW40N120KD | Rugged IGBT transistors with a current rating of 40 A and voltage rating of 1200 V | Stmicroelectronics | 7.304 | BOM |
| DSEI30-06A | 600V Rectifiers with 37A current rating | Littelfuse | 6.106 | BOM |
| NGTB40N120LWG | IGBT Trench Field Stop 1200 V 80 A 260 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| IPW60R070CFD7 | Vertical N-channel MOSFET designed for high power applications | Infineon | 3.271 | BOM |
| STW28NM50N | N-Channel 500 V 21A (Tc) 150W (Tc) Through Hole TO-247-3 | STMICROELECTRONICS | 6.628 | BOM |
| STTH100W06CW | Diode Array 1 Pair Common Cathode 600 V 50A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STGW19NC60HD | Very Fast IGBT Transistors, 19 Amps at 600 Volts | Stmicroelectronics | 6.082 | BOM |
| STGW30NC60WD | N-Channel IGBT Transistor Chip with 600V and 60A | Stmicroelectronics | 9.458 | BOM |
| STW70N60M2 | N-Channel 600 V 68A (Tc) 450W (Tc) Through Hole TO-247 | STMicroelectronics | 9.229 | BOM |
| STW5NK100Z | N-Channel 1000 V 3.5A (Tc) 125W (Tc) Through Hole TO-247-3 | STMICROELECTRONICS | 8.849 | BOM |
| STW25N80K5 | MDmesh K5 Power MOSFET capable of 19.5 A current and 800 V voltage in N-channel configuration | Stmicroelectronics | 6.471 | BOM |
| STW15NK90Z | N-channel 900 V, 0.40 Ohm typ., 15 A SuperMESH Power MOSFET in a TO-247 package | Stmicroelectronics | 5.325 | BOM |
| STPS60L45CW | Diode Array 1 Pair Common Cathode 45 V 30A Through Hole TO-247-3 | STMICROELECTRONICS | 9.515 | BOM |
| STTH60L06CW | Diode Array 1 Pair Common Cathode 600 V 40A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STGW40H120DF2 | 468W 80A 1.2kV TO-247-3 Field Stop IGBTs ROHS | Stmicroelectronics | 9.458 | BOM |
| STPS4045CW | Suitable for a wide range of applications, including telecommunications and computin | STMicroelectronics | 9.426 | BOM |
| STGW40V60DF | Transistor with a maximum power dissipation of 283mW | Stmicroelectronics | 7.207 | BOM |
| STTH60W03CW | Diode Array 1 Pair Common Cathode 300 V 30A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STTH6002CW | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STTH30W02CW | Diode Array 1 Pair Common Cathode 200 V 15A Through Hole TO-247-3 | STMicroelectronics | 9.424 | BOM |
| BU508AW | Bipolar (BJT) Transistor NPN 700 V 8 A 125 W Through Hole TO-247-3 | STMICROELECTRONICS | 6.230 | BOM |
| STGW30NC120HD | 1200V 30A TO-247 N-channel IGBT STGW30NC120HD | Stmicroelectronics | 9.910 | BOM |
| STW11NK90Z | Featuring a Zener SuperMESH architecture | Stmicroelectronics | 2.081 | BOM |
| STPS80150CW | Diode Array 1 Pair Common Cathode 150 V 40A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STPS30170CW | Diode Array 1 Pair Common Cathode 170 V 15A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STTH100W04CW | Diode Array 1 Pair Common Cathode 400 V 50A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STW4N150 | N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247 | Stmicroelectronics | 6.482 | BOM |
| STTH3003CW | Diode Array 1 Pair Common Cathode 300 V 15A Through Hole TO-247-3 | STMicroelectronics | 9.458 | BOM |
| STW15N95K5 | N-Channel 950 V 12A (Tc) 170W (Tc) Through Hole TO-247-3 | STMICROELECTRONICS | 6.927 | BOM |
| STW26NM60N | TO-247-packaged N-channel MOSFET capable of handling up to 600 volts, featuring a typical on-resistance of 0 | Stmicroelectronics | 8.680 | BOM |
| TIP33CG | Bipolar (BJT) Transistor NPN 100 V 10 A 3MHz 80 W Through Hole TO-247-3 | ONSEMI | 5.359 | BOM |
| RURG3060CC | Diodes for general purpose and power applications in TO-247 package with ultra fast switching speed | Onsemi | 5.965 | BOM |
| RURG3020CC | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-247-3 | ON SEMICONDUCTOR | 5.497 | BOM |
| MJH6284G | Bipolar (BJT) Transistor NPN - Darlington 100 V 20 A 4MHz 160 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| MJH11020G | Bipolar (BJT) Transistor NPN - Darlington 200 V 15 A 3MHz 150 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| NGTB40N120FL3WG | 40A 1200V Ultra Field Stop IGBT | Onsemi | 5.533 | BOM |
| SPW21N50C3 | Ideal for high-power electronic circuits due to its robust design and reliable performance | Infineon | 9.300 | BOM |
| SCT2280KE | With its compact design and low power consumption, SCT2280KE leads the way in automotive innovation | ROHM Semiconductor | 9.481 | BOM |
| SCT2160KE | Power field-effect transistor with 22A drain current, 1200V voltage rating, 0 | ROHM Semiconductor | 8.873 | BOM |
| C3M0010090K | High-voltage power electronic device for rugged applicatio | WOLFSPEED, INC | 7.907 | BOM |
| UJC1206K | Robust cascode MOSFET design ensures reliable operati | United Silicon Carbide, Inc | 8.303 | BOM |
| UJN1205K | High-power N-channel transistor for high voltage and current applications | United Silicon Carbide, Inc | 9.186 | BOM |
| AOK66914 | The innovative design of AOK66914 sets it apart as an N-channel trench power MOSFET | Alpha and Omega Semiconductor | 7.859 | BOM |
| IRFP7537 | Excellent choice for DC-DC converters, motor drives, and other power electronic applications requiring high current handling and low RDS(on | infineon | 6.431 | BOM |
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