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TO-247
(insgesamt 372 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| IKW40N120H3 | Chip for high-speed transient IGBT applications | INFINEON | 9.458 | BOM |
| SGW25N120 | High-voltage FAST IGBT Component | INFINEON | 9.458 | BOM |
| STW55NM60ND | N-channel 600V 51A automotive MOSFET with AEC-Q101 certification, TO-247 package | STMicroelectronics, Inc | 3.320 | BOM |
| STW26NM60 | High-power N-channel silicon MOSFET with a low on-resistance of 0.135 ohms | STMicroelectronics, Inc | 3.111 | BOM |
| K40T1202 | State-of-the-Art IGBT Design for High-Frequency Applications and Reduced EM | Infineon | 2.492 | BOM |
| K25T1202 | High-performance duo pack for advanced power applications | Infineon Technologies Corporation | 2.860 | BOM |
| IRFP7718 | Transistor IRFP7718 N-Channel MOSFET | Infineon Technologies Corporation | 3.973 | BOM |
| IRF150P221 | With a trench technology, the IRF150P221 is capable of handling voltages of 100V or higher | Infineon Technologies Corporation | 2.171 | BOM |
| IPW90R120C3 | TO-247 Package N-type MOSFET | Infineon Technologies Corporation | 2.132 | BOM |
| AIMW120R045M1 | The AIMW120R045M1 is a MOSFET in TO-247-3 package that meets ROHS standards | Infineon Technologies Corporation | 3.705 | BOM |
| 47N60C3 | High-Voltage Power Electronics Component, 650V MOSFET N-Channel Device | Infineon Technologies Corporation | 3.568 | BOM |
| IXGH10N60A | IGBT Transistors rated at 600V and 20A | IXYS CORP | 8.186 | BOM |
| IPW65R190CFD | N-Channel MOSFET Transistor with part number IPW65R190CFD | infineon | 6 | BOM |
| IPW65R019C7 | High-power switching solution for demanding application | Infineon Technologies Corporation | 3.460 | BOM |
| SGSD200 | Power Darlington PNP Transistors | STMICROELECTRONICS | 6.243 | BOM |
| DSEI60-02A | Product DSEI60-02A is a Fast Recovery Epitaxial Diode with a voltage rating of 200 Vrrm and a current rating of 69 A | IXYS | 442 | BOM |
| IPW60R180P7 | Tube packaging for convenient storage and handling | Infineon Technologies Corporation | 3.635 | BOM |
| IPW60R037CSFD | IPW60R037CSFD MOSFET, featuring a voltage rating of 650V, a current rating of 54A, and a low on-state resistance of 37mΩ at 10V gate voltage | Infineon Technologies Corporation | 3.162 | BOM |
| IPW60R018CFD7 | N-channel power MOSFET with a voltage rating of 600V and a maximum current of 101A, packaged in a TO-247 enclosure | Infineon Technologies Corporation | 3.525 | BOM |
| SPW11N80C3 | N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1 | Infineon Technologies Corporation | 3.580 | BOM |
| SPW35N60C3 | N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1 | Infineon Technologies Corporation | 3.297 | BOM |
| SPW20N60C3 | 650V 20.7A 208W 190mΩ@10V,13.1A 3.9V@1mA N Channel TO-247AC-3 MOSFETs ROHS | Infineon | 3.626 | BOM |
| DSA90C200HB | Opt for the DSA90C200HB | Ixys | 7.414 | BOM |
| STW11NM80 | N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-247-3 | Stmicroelectronics | 6.371 | BOM |
| FGH40N60SMD | IGBT, 600V, 40A, 1.9V, TO-247Field Stop | Onsemi | 9.458 | BOM |
| H30R1602 | High power IGBT H30R1602 with monolithic body diode | Infineon | 3.711 | BOM |
| BU941P | Bipolar (BJT) Transistor NPN - Darlington 400 V 15 A 155 W Through Hole TO-247-3 | Stmicroelectronics | 9.458 | BOM |
| STW13009 | Trans GP BJT NPN 400V 12A | STMicroelectronics, Inc | 2.638 | BOM |
| RJH60F5DPQ | Silicon N Channel IGBT High Speed Power Switching | Renesas Technology Corp | 3.726 | BOM |
| STW18N65M5 | N-Channel 650 V 15A (Tc) 110W (Tc) Through Hole TO-247-3 | Stmicroelectronics | 3.094 | BOM |
| SPW11N60CFD | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies Corporation | 3.963 | BOM |
| RURG30100 | TO-247 Ultra Fast Rectifiers, exemplified by RURG30100, offer swift rectification performance | Onsemi | 7.315 | BOM |
| IDW30G65C5 | High Voltage Schottky Diode with 30A Current Rating and TO-247 Housing | Infineon | 9.720 | BOM |
| IDW10G65C5 | Schottky Diodes & Rectifiers SIC DIODES | Infineon | 6.679 | BOM |
| IDW16G65C5 | Rugged and efficient, this 1.5V @ 16A Schottky diode excels in demanding industrial applications such as power conditioning and conversion systems | Infineon | 7.270 | BOM |
| IDW20G65C5 | Single TO-247-3 package Schottky Barrier Diode with 650V voltage rating and 20A current rating, suitable for various applications | Infineon | 6.060 | BOM |
| IRG4PC50SPBF | Power Semiconductor Components - IGBTs tailored for applications requiring 600V DC operation and up to 1 kHz switching frequency | IR | 9.458 | BOM |
| STGW35HF60W | Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube | STMicroelectronics | 9.458 | BOM |
| SPW55N80C3 | The SPW55N80C3 Power Field-Effect Transistor is engineered for high-voltage applications, boasting a low on-resistance of 0 | infineon | 7.549 | BOM |
| RHRG1560CC | High-performance rectifier diode for efficient power conversion applications | Onsemi | 9.855 | BOM |
| RHRG3060CC | Phase, 2 Element, 30A, 600V V(RRM) Rectifier Diode | Onsemi | 7.376 | BOM |
| FGH40N120AN | kV-rated IGBT module for industrial power applicatio | Onsemi | 9.662 | BOM |
| APT1001RBN | APT1001RBN Microchip Technology product details | Microchip | 5.270 | BOM |
| NGTB20N120LWG | IGBT Trench Field Stop 1200 V 40 A 192 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| NGTB40N120L3WG | NGTB40N120L3WG is a Flange Mount Ultra Field Stop IGBT with a voltage rating of 1200V and a maximum current of 160A | Onsemi | 9.237 | BOM |
| NGTB25N120FLWG | IGBT Trench Field Stop 1200 V 50 A 192 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| NGTB15N120IHLWG | IGBT 1200 V 30 A 156 W Through Hole TO-247-3 | onsemi | 9.458 | BOM |
| STGW45HF60WD | Advanced power semiconductor component for grid-connected energy managemen | Stmicroelectronics | 9.550 | BOM |
| FGH75T65UPD | Semiconductor device utilizing Insulated Gate Bipolar Transistor (IGBT) technology | Onsemi | 5.597 | BOM |
| APT60GT60BRG | 600V, 100A IGBT chip, N-channel, TO-247 package with 3 pins and a tab | Microchip | 6.822 | BOM |
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