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TO-3P-3
(insgesamt 50 Teile)| Herst.Teile-Nr. | Beschreibung | Hersteller | Auf Lager | Betrieb |
|---|---|---|---|---|
| FGA25N120ANTDTU | IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P | onsemi | 9.458 | BOM |
| NJW1302G | 50V 15A 200W PNP bipolar transistor TO3P | Onsemi | 9.458 | BOM |
| NJW3281G | 15 A, 250 V NPN Complementary Bipolar Power Junction Transistors | Onsemi | 9.458 | BOM |
| NJW0302G | , bipolar transistor with high current output ( character | Onsemi | 9.458 | BOM |
| 2SJ162-E | 2SJ162 - P Channel MOSFET | Renesas | 3.082 | BOM |
| IXTQ30N60P | This device is an N-channel MOSFET transistor designed for unipolar operation | Ixys | 5.952 | BOM |
| 2SC5200-O | NPN bipolar junction transistor suitable for high-current amplifier circui | toshiba | 6.518 | BOM |
| IXTQ52P10P | 00V P-channel MOSFET with 52A current handling ability and TO-3P housing | IXYS | 9.458 | BOM |
| IXTQ76N25T | N-Channel 250 V 76A (Tc) 460W (Tc) Through Hole TO-3P | IXYS | 9.458 | BOM |
| IXTQ36P15P | 36.0 Amps - 150V MOSFET with 0.110 ohm on-state resistance | IXYS | 9.458 | BOM |
| IXGQ85N33PCD1 | TO-3P Trans IGBT Chip 330V 85A 150W | Ixys | 7.575 | BOM |
| IXTQ10P50P | Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-3P | IXYS | 9.458 | BOM |
| NDTL03N150CG | N-Channel 1500 V 2.5A (Ta) 2.5W (Ta), 140W (Tc) Through Hole TO-3P(L) | onsemi | 9.458 | BOM |
| 2SK1058-E | MOSFET N Channel TO-3P Tube | Renesas | 5.493 | BOM |
| 2SK1835-E | TO-3P package type with 3 pins + tab for easy mounting | Renesas Electronics | 9.458 | BOM |
| 2SK1317-E | MOSFETs designed for applications such as motor drive and load switching | Renesas | 5.398 | BOM |
| IXTQ22N60P | 600V 22A N-channel MOSFET transistor in TO-3P package | IXYS | 9.458 | BOM |
| IXTQ96N15P | MOSFET with 96 Amperes, 150 Volts, and 0.024 Rds | IXYS | 9.458 | BOM |
| IXTQ52N30P | Low Rds of 0.066 Ohm ensures efficient operation | Ixys | 5.421 | BOM |
| IXTQ88N30P | Robust and efficient MOSFET component for 300V systems | IXYS | 9.458 | BOM |
| IXTQ50N20P | TO-3P packaged N-channel MOSFET transistor with a voltage capacity of 200V and a current rating of 50A | IXYS | 9.458 | BOM |
| IXTQ36N30P | Product description: 300V 36A N Channel MOSFET | IXYS | 9.458 | BOM |
| IXTQ170N10P | Features: ROHS compliant | IXYS | 9.458 | BOM |
| 2SK1518-E | Silicon Power Transistor | RENESAS ELECTRONICS CORP | 5.154 | BOM |
| 2STA1962 | High-Power PNP Silicon Transistor, TO-3P, RoHS Certified, 15A, 230V | STMicroelectronics | 9.458 | BOM |
| LT1083CP-5 | Low Drop-Out Linear Regulator with a 5V fixed output voltage | Analog Devices | 7.719 | BOM |
| LT1083CP-12 | Low Dropout Voltage of 1.5V | Analog Devices | 7.110 | BOM |
| 2SA1943-O | PNP power transistor, designed to handle 230V and 15A, with a 150W maximum power dissipation, in a TO-3PL package with 3 pins plus a tab | toshiba | 7.791 | BOM |
| 2STA1695 | High-power transistor suitable for audio amplifier designs | STMICROELECTRONICS | 7.065 | BOM |
| 2STA2120 | PNP NPN transistor with high current handling capacity and power dissipatio | STMicroelectronics | 9.458 | BOM |
| IXTQ26N50P | 6A, 400W, 500V unipolar N-MOSFET transistor, TO3P package, 300ns | IXYS | 9.458 | BOM |
| DPG120C300QB | Diode Switching 300V 120A 3-Pin(3+Tab) TO-3P Tube | IXYS | 9.458 | BOM |
| STGWT60V60DF | IGBT Trench Field Stop 600 V 80 A 375 W Through Hole | STMicroelectronics | 9.458 | BOM |
| 2STC4468 | Bipolar (BJT) Transistor NPN 140 V 10 A 20MHz 100 W Through Hole TO-3P | STMICROELECTRONICS | 9.534 | BOM |
| DPG60C200QB | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-3P-3, SC-65-3 | IXYS | 9.458 | BOM |
| IXTQ96N20P | Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P | IXYS | 9.458 | BOM |
| IXTQ60N20T | N-channel Trench MOSFET with a 60A and 200V capacity | Littelfuse | 5.335 | BOM |
| 2SB863 | Transistor with PNP silicon technology | Sptech | 5.304 | BOM |
| IXTQ460P2 | N-Channel MOSFET IXTQ460P2: Rated for 500 Volts | Littelfuse | 6.378 | BOM |
| NJW21194G | NPN Bipolar Junction Transistor with 250V voltage rating and 16A current rating | Onsemi | 4.034 | BOM |
| NJW0281G | NPN Power Transistor with 250V, 15A, and 150W rating in TO-3P packaging | Onsemi | 4.571 | BOM |
| 2SK2221-E | Transistor MOSFET for Automotive Applications | Renesas Electronics | 9.458 | BOM |
| IXTQ22N50P | Product name: MOSFET 22.0 Amps 500 V 0.27 Ohm Rds | Ixys | 5.515 | BOM |
| BU2527AF | Powerful and efficient bipolar device for high current need | Sptech | 6.774 | BOM |
| IXTQ110N10P | 110 Amps MOSFET with 100V rating and 0.015 ohms Rds | Ixys | 7.269 | BOM |
| 2SC5200-O(Q) | NPN Bipolar Transistor, rated for 230 volts, with a maximum current of 15 amps and power handling capacity of 150 watts, in TO3PL package | Toshiba | 6.254 | BOM |
| 2SC5949-O(Q) | Bipolar Transistors - BJT Transistor NPN 200V 15A | Toshiba | 9.458 | BOM |
| 2SK1342-E | <p>The 2SK1342 is a Nch Single Power Mosfet 900V 6A 3000Mohm To-3P.</p> | Renesas Electronics | 9.458 | BOM |
| RJK5020DPK-00#T0 | <p>The RJK5020DPK is a Nch Single Power Mosfet 500V 40A 118Mohm To-3P.</p> | Renesas Electronics | 9.458 | BOM |
| 2SK1339-E | <p>The 2SK1339 is a Nch Single Power Mosfet 900V 3A 7000Mohm To-3P.</p> | Renesas Electronics | 9.458 | BOM |
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