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Bestellungen über
$5000
ON FDB33N25TM
D2PAK-packaged Power MOSFET with N-Channel configuration and UniFETTM technology
Marken: Onsemi
Herstellerteil #: FDB33N25TM
Datenblatt: FDB33N25TM Datasheet (PDF)
Paket/Gehäuse: D2PAK-3
RoHS-Status:
Lagerzustand: 2.161 Stück, Neues Original
Produktart: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Alle Preise sind in USD
| Menge | Einzelpreis | Ext. Preis |
|---|---|---|
| 1 | $1,804 | $1,804 |
| 10 | $1,552 | $15,520 |
| 30 | $1,396 | $41,880 |
| 100 | $1,236 | $123,600 |
| 500 | $1,099 | $549,500 |
| 800 | $1,068 | $854,400 |
Auf Lager: 2.161 Stck
FDB33N25TM Allgemeine Beschreibung
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Funktionen
Type: N-Channel MOSFET
Voltage Rating (VDS): 250 volts
Current Rating (ID): 33 amperes
RDS(on) (On-State Resistance): This value indicates the resistance between the drain and source when the MOSFET is in the "on" state.
Package: TO-263 (also known as D²PAK or DDPAK) which is a surface-mount package.
Gate Threshold Voltage (VGS(th)): The voltage at which the MOSFET begins to turn on.
Anwendung
- This product is general usage and suitable for many different applications.
Spezifikationen
| Parameter | Wert | Parameter | Wert |
|---|---|---|---|
| Product Name | FDB33N25TM | Product Type | Power MOSFET |
| Manufacturer | ON Semiconductor | Transistor Type | N-Channel |
| Drain-Source Voltage (Vdss) | 250V | Continuous Drain Current (Id) | 33A |
| Rds(on) (On-Resistance) | 0.095 ohms (max) | Gate-Source Threshold Voltage (Vgs(th)) | 2V (max) |
| Operating Temperature Range | -55°C to +175°C | Package / Case | TO-263 (D2PAK) |
| Packaging | Tape & Reel, Tube, and other options | feature-category | Power MOSFET |
| feature-material | feature-process-technology | UniFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 250 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 33 |
| feature-maximum-drain-source-resistance-mohm | 94@10V | feature-typical-gate-charge-vgs-nc | 36.8@10V |
| feature-typical-gate-charge-10v-nc | 36.8 | feature-typical-input-capacitance-vds-pf | 1640@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 235000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes | Series | UniFET™ |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 25 V | Power Dissipation (Max) | 235W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
Versand
| Versandart | Versandgebühr | Vorlaufzeit | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
| Zahlungsbedingungen | Handgebühr | |
|---|---|---|
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
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Paypal | 4,0 % Servicegebühr wird berechnet. |
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Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
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Western Union | charge US.00 banking fee. |
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Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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The FDB33N25TM is a power MOSFET chip used in various electronic applications. It is designed to handle high currents and voltage levels, making it suitable for power management, motor control, and switching applications. The chip features low on-resistance, fast switching characteristics, and high reliability. It is commonly used in industrial and automotive systems where efficient power handling is critical.
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Equivalent
There are no direct equivalent products for the FDB33N25TM chip as it is a unique component. However, you may consider looking at other N-channel MOSFET chips with similar voltage and current ratings from manufacturers such as Infineon, Texas Instruments, Vishay, or ON Semiconductor. -
Features
The FDB33N25TM is a power MOSFET transistor with a VDS rating of 250V, a continuous drain current of 33A, and a low on-resistance of 0.041Ω. It is designed for high power applications with high efficiency and can handle large current flows. -
Pinout
The FDB33N25TM is a MOSFET transistor with a TO-263 package. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the FDB33N25TM is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductor devices and integrated circuits in various industries such as automotive, consumer electronics, industrial, and more. -
Application Field
The FDB33N25TM is a power MOSFET transistor commonly used in various applications such as switching power supplies, motor control, and power management in electronics. It is particularly well-suited for high-voltage and high-power applications where efficiency and reliability are important factors. -
Package
The FDB33N25TM chip has the TO-263 package type, a VDSS form, and a size of 10.16mm x 7.49mm.
Datenblatt PDF
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365 Tage Qualitätsgarantie für alle Produkte
Exceptional customer service and high-quality components. Very satisfied.