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Bestellungen über
$5000ON FDBL0150N80
MOSFET, N-CH, 80V, 300A, MO-299A-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:80V; On Resistance
Marken: ON Semiconductor, LLC
Herstellerteil #: FDBL0150N80
Datenblatt: FDBL0150N80 Datasheet (PDF)
Paket/Gehäuse: MO-299A
Produktart: Single FETs, MOSFETs
RoHS-Status:
Lagerzustand: 3.430 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FDBL0150N80 Allgemeine Beschreibung
When it comes to quality and performance, the FDBL0150N80 MOSFET doesn't disappoint. With its automotive qualification standard and MSL 1 - Unlimited rating, you can trust that this transistor will meet industry standards for safety and reliability. Lead-free and environmentally friendly, this MOSFET is a responsible choice for your project. Whether you're working on a high-power application or need precise control over your circuit, the FDBL0150N80 delivers the performance you need. Plus, with its 8-pin configuration and easy-to-use MO-299A case style, integrating this transistor into your design is a breeze
Funktionen
- Typical RDS(on) = 1.1 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS Compliant
Anwendung
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated Tools
- Battery Protection
- Solar Inverters
- Universal Power Supply
- Energy Inverters
- Energy Storage
- Load Switch
Spezifikationen
| Parameter | Wert | Parameter | Wert |
|---|---|---|---|
| Source Content uid | FDBL0150N80 | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Manufacturer Package Code | 100CU | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 67 Weeks |
| Samacsys Manufacturer | onsemi | Avalanche Energy Rating (Eas) | 820 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 300 A |
| Drain-source On Resistance-Max | 0.0014 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MO-299A | JESD-30 Code | R-PSSO-F2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 429 W | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | FLAT |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 193 ns | Turn-on Time-Max (ton) | 128 ns |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | TMOS | feature-configuration | Single Seven Source |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 80 |
| feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | 4 |
| feature-maximum-continuous-drain-current-a | 300 | feature-maximum-drain-source-resistance-mohm | 1.4@10V |
| feature-typical-gate-charge-vgs-nc | 172@10V | feature-typical-gate-charge-10v-nc | 172 |
| feature-typical-input-capacitance-vds-pf | 12800@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 429000 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 9 | |
| feature-supplier-package | PSOF | feature-standard-package-name1 | |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Versand
| Versandart | Versandgebühr | Vorlaufzeit | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
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REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
| Zahlungsbedingungen | Handgebühr | |
|---|---|---|
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Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. |
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Paypal | 4,0 % Servicegebühr wird berechnet. |
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Kreditkarte | 3,5 % Servicegebühr wird berechnet. |
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Western Union | charge US.00 banking fee. |
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Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
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Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
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FDBL0150N80 is a power MOSFET chip used in various electronic devices. It is designed to efficiently regulate and control high power applications, offering low on-resistance and high current capability. With its advanced technology, the chip ensures improved performance, reliability, and energy efficiency. It is commonly used in power supplies, motor control systems, automotive electronics, and other high-power applications.
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Equivalent
There are no directly equivalent products to the FDBL0150N80 chip. However, you may find similar power MOSFET chips from other manufacturers that have similar specifications and features. -
Features
The FDBL0150N80 is a MOSFET transistor with a drain-source voltage rating of 800V and a continuous drain current of 1.5A. It features low on-resistance and fast switching speed, making it suitable for applications requiring high voltage and high power operation, such as power supplies, motor drives, and inverters. -
Pinout
The FDVL0150N80 is a power MOSFET transistor. It has a pin count of 5, with the following functions: Gate (G), Source (S), Drain (D), Body Diode Cathode (K), and Body Diode Anode (A). -
Manufacturer
The manufacturer of the FDBL0150N80 is ON Semiconductor. It is a semiconductor manufacturing company that specializes in producing a wide range of electronic components, including power management systems, sensors, analog and mixed-signal devices, and integrated circuits. -
Application Field
The FDBL0150N80 is a power MOSFET transistor that can be used in a variety of applications, including industrial equipment, motor controls, power supplies, inverters, and lighting systems. The transistor's high voltage and current capabilities make it well-suited for high-power applications. -
Package
The FDBL0150N80 chip is in a TO-263 package type, also known as D2PAK. Its form is a surface mount, with three pins. The chip's size is approximately 10 mm x 11 mm.
Datenblatt PDF
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365 Tage Qualitätsgarantie für alle Produkte
While not the best I've ever used, the microcontrollers I received worked well for my project.