K4H561638H-UCB3
PDSO66 DDR DRAM 16MX16 0.7ns CMOS
Marken: Samsung
Herstellerteil #: K4H561638H-UCB3
Datenblatt: K4H561638H-UCB3 Datenblatt (PDF)
Paket/Gehäuse: TSSOP66
Produktart: MCU
RoHS-Status:
Lagerzustand: 4350 Stück, Neues Original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
BOMK4H561638H-UCB3 Allgemeine Beschreibung
The K4H561638H-UCB3 is a synchronous dynamic random-access memory (SDRAM) module manufactured by Samsung. It features a capacity of 512 megabytes (MB) organized as 4 banks of 4 megabit (Mbit) x 16 bits. Operating at a voltage of 2.5 volts (V), it supports high-speed data transfer rates up to 166 megatransfers per second (MT/s). This memory module utilizes a double data rate (DDR) interface, enabling it to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.With a CAS latency of 3 clock cycles, this module offers fast access times, enhancing overall system performance. It conforms to the JEDEC standard and is designed for use in computing systems such as desktop PCs, laptops, and servers. The K4H561638H-UCB3 incorporates advanced features like auto precharge and auto refresh to optimize memory management and reliability. Its compact form factor and low power consumption make it suitable for various computing applications where high-speed and efficient memory access are essential
Funktionen
- 16M x 16 DDR2 SDRAM
- High-speed data transfer rates up to 400Mbps
- Double data rate architecture
- Operates at a power supply voltage of 1.8V
- Programmable CAS latency
- JEDEC standard 60-ball FBGA package
Anwendung
- Mobile phones
- Tablets
- Internet of Things (IoT) devices
- Wearable technology
- Smart home devices
- Automotive electronics
- Digital cameras
- Industrial applications
- Medical devices
- Military and aerospace systems
Spezifikationen
Parameter | Wert | Parameter | Wert |
---|---|---|---|
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC |
ECCN Code | EAR99 | HTS Code | 8542.32.00.24 |
Samacsys Manufacturer | SAMSUNG | Access Time-Max | 0.7 ns |
Clock Frequency-Max (fCLK) | 166 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 3 | Number of Terminals | 66 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Temperature-Max | 70 °C | Organization | 16MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies | 2.3 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.003 A |
Supply Current-Max | 0.33 mA | Supply Voltage-Nom (Vsup) | 2.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form | GULL WING | Terminal Pitch | 0.635 mm |
Terminal Position | DUAL |
Versand
Versandart | Versandgebühr | Vorlaufzeit | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 Tage | |
REGISTRIERTE LUFTPOST | $20.00-$40.00 (0.50 KG) | 2-5 Tage |
Bearbeitungszeit: Die Versandkosten hängen von der jeweiligen Zone und dem Land ab.
Zahlung
Zahlungsbedingungen | Handgebühr | |
---|---|---|
Banküberweisung | Bankgebühr in Höhe von 30,00 USD wird berechnet. | |
Paypal | 4,0 % Servicegebühr wird berechnet. | |
Kreditkarte | 3,5 % Servicegebühr wird berechnet. | |
Western Union | charge US.00 banking fee. | |
Geldgramm | Bankgebühr in Höhe von 0,00 USD wird berechnet. |
Garantien
1. Die von Ihnen gekauften elektronischen Bauteile enthalten eine 365-tägige Garantie. Wir garantieren die Produktqualität.
2. Wenn einige der Artikel, die Sie erhalten haben, nicht von perfekter Qualität sind, würden wir verantwortungsvoll Ihre Rückerstattung oder Ersatz arrangieren. Die Artikel müssen jedoch in ihrem Originalzustand verbleiben.
Verpackung
-
Schritt1 :Produkt
-
Schritt2 :Vakuumverpackung
-
Schritt3 :Antistatikbeutel
-
Schritt4 :Individuelle Verpackung
-
Schritt5 :Verpackungskartons
-
Schritt6 :Barcode-Versandetikett
Alle Produkte werden in antistatischen Beuteln verpackt. Versand mit ESD-Antistatikschutz.
Auf dem äußeren ESD-Verpackungsetikett werden die Informationen unseres Unternehmens verwendet: Teilenummer, Marke und Menge.
Wir prüfen alle Waren vor dem Versand, stellen sicher, dass sich alle Produkte in gutem Zustand befinden und dass die Teile neu und original sind und mit dem Datenblatt übereinstimmen.
Nachdem alle Waren darauf überprüft wurden, dass nach dem Verpacken keine Probleme auftreten, werden wir sicher verpacken und per Global Express versenden. Es zeigt eine ausgezeichnete Durchstoß- und Reißfestigkeit sowie eine gute Dichtungsintegrität.
Teilpunkte
-
The K4H561638H-UCB3 chip is a high-density synchronous dynamic random-access memory (SDRAM) chip commonly used in electronics such as smartphones, tablets, and other devices. It offers fast data transfer speeds and high storage capacity, making it ideal for demanding applications that require quick and efficient data processing.
-
Equivalent
The equivalent products of K4H561638H-UCB3 chip are Hynix HY5PS1G831C and Samsung K4H511638G-LCCC chips. They have similar specifications and can be used as alternatives for the K4H561638H-UCB3 chip. -
Features
The K4H561638H-UCB3 is a 512MB DDR SDRAM module with a 64Mx64 configuration. It operates at a high-speed clock frequency of 166MHz and is organized as a 4-bank / 4-bank x 8,192 refresh (8,192 cycle), with a 64ms. The module supports 400MHz and is ideal for applications requiring high-speed memory functionality. -
Pinout
The K4H561638H-UCB3 is a 512Mb DDR SDRAM chip with a 66-pin package. It has a 66-pin ball grid array (BGA) configuration and is used in computer memory modules. The pin functions include power supply, address inputs, data inputs/outputs, clock inputs, and control signals. -
Manufacturer
The manufacturer of the K4H561638H-UCB3 is Samsung. Samsung is a South Korean multinational conglomerate company that specializes in electronics, mobile devices, semiconductors, and other technology products. Samsung is one of the largest technology companies in the world and a leading producer of memory chips and other semiconductor components. -
Application Field
The K4H561638H-UCB3 is a 512MB DDR SDRAM module commonly used in desktop computers, laptops, networking equipment, and industrial applications. It is particularly suitable for high-performance computing tasks such as gaming, multimedia editing, and graphics rendering. -
Package
The K4H561638H-UCB3 chip comes in a Ball Grid Array (BGA) package. It is in the form of a memory module and has a size of 54mm x 90mm.
Wir bieten qualitativ hochwertige Produkte, durchdachten Service und eine Kundendienstgarantie
-
Wir haben reichhaltige Produkte, die Ihre unterschiedlichen Bedürfnisse erfüllen können.
-
Die Mindestbestellmenge beginnt bei 1 Stück.
-
Niedrigste internationale Versandgebühr beginnt ab 0,00 USD
-
365 Tage Qualitätsgarantie für alle Produkte