MT41K256M16TW-107 IT:P

Teilpunkte

• The MT41K256M16TW-107 IT:P is a DDR3 SDRAM chip designed for use in computer systems and other electronics. It offers a high density of 4Gb with a data rate of 1333 Mbps and operates at a voltage of 1.5V. The chip is ideal for applications requiring high performance memory solutions with low power consumption.

• Equivalent

  The equivalent products of MT41K256M16TW-107 IT:P chip are Micron MT41K256M16TW-107IT:P, Samsung K4B2G1646E-BCK0, SK Hynix H5TQ4G63AFR-PBC, and Elpida EDF8132A3PH-8D-F. These chips are all 4Gb DDR3 SDRAMs with similar specifications and performance.

• Features

  1. 4Gb DDR3 SDRAM 2. 107-ball FBGA package 3. 16 internal banks and 8 banks are activated 4. 6.25 ns row cycle time 5. 1.6V power supply 6. Operating temperature range of 0°C to 95°C 7. RoHS-compliant and halogen-free 8. Low power consumption and high-speed performance.

• Pinout

  The pin count of MT41K256M16TW-107 IT:P is 96 pins. This is a DDR3 SDRAM memory module with a capacity of 4Gb (256Mx16). It operates at a speed of 1600MHz and has a CAS latency of 11.

• Manufacturer

  MT41K256M16TW-107 IT:P is manufactured by Micron Technology Inc., which is an American multinational corporation that produces computer memory and computer data storage. Micron Technology is a global leader in the semiconductor industry, providing advanced memory solutions for a wide range of applications, including consumer electronics, automotive, and networking.

• Application Field

  MT41K256M16TW-107 IT:P is commonly used in applications such as servers, high-performance computing, networking, telecommunications, and industrial automation. It is also suitable for use in embedded systems, data storage, and graphic processing. With its high data transfer speeds and reliability, it is an ideal choice for demanding computing applications.

• Package

  The MT41K256M16TW-107 IT:P chip is available in a 96-ball FBGA package with a form factor of 9mm x 13mm. It has a size of 256Mb x 16-107 IT:P, making it suitable for various applications requiring high-speed and high-density memory.